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| 型号： | W947D2HBJX5E |
| 厂商： | Winbond Electronics |
| 文件页数： | 38/60页 |
| 文件大小： | 0K |
| 描述： | IC LPDDR SDRAM 128MBIT 90VFBGA |
| 标准包装： | 240 |
| 格式 - 存储器： | RAM |
| 存储器类型： | 移动 LPDDR SDRAM |
| 存储容量： | 128M（4Mx32） |
| 速度： | 200MHz |
| 接口： | 并联 |
| 电源电压： | 1.7 V ~ 1.95 V |
| 工作温度： | -25°C ~ 85°C |
| 封装/外壳： | 90-TFBGA |
| 供应商设备封装： | 90-VFBGA（8x13） |
| 包装： | 托盘 |
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W947D6HB / W947D2HB
128Mb Mobile LPDDR
7.6.10 Interrupting Write to Read
Data for any Write burst may be truncated by a subsequent READ command as shown in the figure below. Note that
the only data-in pairs that are registered prior to the t WTR period are written to the internal array, and any subsequent
data-in must be masked with DM.
CK
CK
Command
WRITE
NOP
NOP
READ
NOP
NOP
NOP
Address
BA,Col b
t DQSSmax
BA,Col n
t WTR
BA,Col n
CL=3
DQS
DQ
DM
DI b
DO n
1) Dl b = Data in to column b. DO n=Data out from column n.
= Don't Care
2) An interrupted burst of 4 is shown, 2 data elements are written.
3 subsequent elements of Data In are applied in the programmed order following DI b.
3) t WTR is referenced from the positive clock edge after the last Data In pair.
4)A10 is LOW with the WRITE command (Auto Precharge is disabled)
5) The READ and WRITE commands are to the same device but not necessarily to the same bank.
7.6.11 Write to Precharge
Data for any WRITE burst may be followed by a subsequent PRECHARGE command to the same bank (provided
Auto Precharge was not activated). To follow a WRITE without truncating the WRITE burst, t WR should be met as
shown in the figure below.
7.6.12 Non-Interrupting Write to Precharge
CK
CK
Command
WRITE
NOP
NOP
NOP
NOP
PRE
Address
BA,Col b
t DQSSmax
BA,Col n
t WR
BA a (or all)
DQS
DQ
DM
1) Dl b = Data in to column b
DI b
= Don't Care
3 subsequent elements of Data In are applied in the programmed order following DI b.
2) A non-interrupted burst of 4 is shown.
3) t WR is referenced from the positive clock edge after the last Data In pair.
4) A10 is LOW with the WRITE command (Auto Precharge is disabled)
Publication Release Date:Jun,17, 2011
- 38 -
Revision A01-003
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相关代理商/技术参数 |
参数描述 |
|---|---|
| W947D2HBJX5I | 制造商:WINBOND 制造商全称:Winbond 功能描述:128Mb Mobile LPDDR |
| W947D2HBJX6E | 制造商:Winbond Electronics Corp 功能描述:IC LPDDR SDRAM 128MBIT 90VFBGA |
| W947D2HBJX6G | 制造商:WINBOND 制造商全称:Winbond 功能描述:128Mb Mobile LPDDR |
| W947D6HB | 制造商:WINBOND 制造商全称:Winbond 功能描述:128Mb Mobile LPDDR |
| W947D6HBHX5E | 功能描述:IC LPDDR SDRAM 128MBIT 60VFBGA RoHS:是 类别:集成电路 (IC) >> 存储器 系列:- 标准包装:1 系列:- 格式 - 存储器:闪存 存储器类型:闪存 - NAND 存储容量:4G（256M x 16） 速度:- 接口:并联 电源电压:2.7 V ~ 3.6 V 工作温度:0°C ~ 70°C 封装/外壳:48-TFSOP（0.724"，18.40mm 宽） 供应商设备封装:48-TSOP I 包装:Digi-Reel® 其它名称:557-1461-6 |
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