参数资料
型号: W947D2HBJX5E
厂商: Winbond Electronics
文件页数: 1/60页
文件大小: 0K
描述: IC LPDDR SDRAM 128MBIT 90VFBGA
标准包装: 240
格式 - 存储器: RAM
存储器类型: 移动 LPDDR SDRAM
存储容量: 128M(4Mx32)
速度: 200MHz
接口: 并联
电源电压: 1.7 V ~ 1.95 V
工作温度: -25°C ~ 85°C
封装/外壳: 90-TFBGA
供应商设备封装: 90-VFBGA(8x13)
包装: 托盘
W947D6HB / W947D2HB
128Mb Mobile LPDDR
TABLE OF CONTENTS
1. GENERAL DESCRIPTION .......................................................................................................... 4
2. FEATURES.................................................................................................................................. 4
3. PIN CONFIGURATION ................................................................................................................ 5
3.1 Ball Assignment: LPDDR X16 ..........................................................................................................5
3.2 Ball Assignment: LPDDR X32 ..........................................................................................................5
4. PIN DESCRIPTION ..................................................................................................................... 6
4.1 Signal Descriptions ...........................................................................................................................6
4.2 Addressing Table .............................................................................................................................7
5. BLOCK DIAGRAM ...................................................................................................................... 8
5.1 Block Diagram ..................................................................................................................................8
5.2 Simplified State Diagram ..................................................................................................................9
6. FUNCTION DESCRIPTION ....................................................................................................... 10
6.1 Initialization .................................................................................................................................... 10
6.1.1 Initialization Flow Diagram ....................................................................................................................11
6.1.2 Initialization Waveform Sequence .........................................................................................................12
6.2 Register Definition .......................................................................................................................... 12
6.2.1 Mode Register Set Operation ................................................................................................................12
6.2.2 Mode Register Definition .......................................................................................................................13
6.2.3. Burst Length .........................................................................................................................................13
6.3 Burst Definition ............................................................................................................................... 14
6.4 Burst Type ...................................................................................................................................... 15
6.5 Read Latency ................................................................................................................................. 15
6.6 Extended Mode Register Description ............................................................................................. 15
6.6.1 Extended Mode Register Definition ......................................................................................................16
6.7 Status Register Read ..................................................................................................................... 16
6.7.1 SRR Register (A[n:0] = 0) .....................................................................................................................17
6.7.2 Status Register Read Timing Diagram .................................................................................................18
6.8 Partial Array Self Refresh ............................................................................................................... 19
6.9 Automatic Temperature Compensated Self Refresh ....................................................................... 19
6.10 Output Drive Strength ................................................................................................................... 19
6.11 Commands ................................................................................................................................... 19
6.11.1 Basic Timing Parameters for Commands ...........................................................................................19
6.11.2 Truth Table - Commands ....................................................................................................................20
6.11.3 Truth Table - DM Operations ..............................................................................................................21
6.11.4 Truth Table - CKE ...............................................................................................................................21
6.11.5 Truth Table - Current State BANKn - Command to BANKn ...............................................................22
6.11.6 Truth Table - Current State BANKn, Command to BANKn .................................................................23
7. OPERATION.............................................................................................................................. 24
7.1. Deselect ........................................................................................................................................ 24
7.2. No Operation ................................................................................................................................. 24
7.2.1 NOP Command .....................................................................................................................................25
Publication Release Date:Jun,17, 2011
- 1 -
Revision A01-003
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W947D2HBJX5I 制造商:WINBOND 制造商全称:Winbond 功能描述:128Mb Mobile LPDDR
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W947D6HBHX5E 功能描述:IC LPDDR SDRAM 128MBIT 60VFBGA RoHS:是 类别:集成电路 (IC) >> 存储器 系列:- 标准包装:1 系列:- 格式 - 存储器:闪存 存储器类型:闪存 - NAND 存储容量:4G(256M x 16) 速度:- 接口:并联 电源电压:2.7 V ~ 3.6 V 工作温度:0°C ~ 70°C 封装/外壳:48-TFSOP(0.724",18.40mm 宽) 供应商设备封装:48-TSOP I 包装:Digi-Reel® 其它名称:557-1461-6