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型号： W9751G6KB-25
厂商： Winbond Electronics
文件页数： 5/87页
文件大小： 0K
描述： IC DDR2 SDRAM 512MBIT 84WBGA
标准包装： 209
格式 - 存储器： RAM
存储器类型： DDR2 SDRAM
存储容量： 512M（32Mx16）
速度： 2.5ns
接口： 并联
电源电压： 1.7 V ~ 1.9 V
工作温度： 0°C ~ 85°C
封装/外壳： 84-TFBGA
供应商设备封装： 84-WBGA（8x12.5）
包装： 托盘
W9751G6KB
3. ORDER INFORMATION
PART NUMBER
W9751G6KB-18
W9751G6KB-25
W9751G6KB25I
W9751G6KB25A
W9751G6KB25K
W9751G6KB-3
SPEED GRADE
DDR2-1066 (7-7-7)
DDR2-800 (5-5-5) or DDR2-800 (6-6-6)
DDR2-800 (5-5-5) or DDR2-800 (6-6-6)
DDR2-800 (5-5-5) or DDR2-800 (6-6-6)
DDR2-800 (5-5-5) or DDR2-800 (6-6-6)
DDR2-667 (5-5-5)
OPERATING TEMPERATURE
0°C ≤ T CASE ≤ 85°C
0°C ≤ T CASE ≤ 85°C
-40°C ≤ T CASE ≤ 95°C
-40°C ≤ T A, T CASE ≤ 95°C
-40°C ≤ T A, T CASE ≤ 105°C
0°C ≤ T CASE ≤ 85°C
4. KEY PARAMETERS
SPEED GRADE
DDR2-1066
DDR2-800
DDR2-667
SYM.
Bin(CL-tRCD-tRP)
Part Number Extension
7-7-7
-18
5-5-5/6-6-6
-25/25I/25A/25K
5-5-5
-3
@CL = 7
@CL = 6
Min.
Max.
Min.
Max.
1.875 nS
7.5 nS
2.5 nS
7.5 nS
?
?
2.5 nS
8 nS
?
?
?
?
t CK(avg)
Average clock period
@CL = 5
@CL = 4
@CL = 3
Min.
Max.
Min.
Max.
Min.
Max.
3 nS
7.5 nS
3.75 nS
7.5 nS
?
?
2.5 nS
8 nS
3.75 nS
8 nS
5 nS
8 nS
3 nS
8 nS
3.75 nS
8 nS
5 nS
8 nS
t RCD
Active to Read/Write Command Delay Time
-40°C ≤ T CASE ≤ 85°C
Min.
13.125 nS
? * 2
12.5 nS
7.8 μ S* 2, 3
15 nS
? * 2
7.8 μ S*
7.8 μ S*
t REFI
Average periodic
refresh Interval
0°C ≤ T CASE ≤ 85°C
85°C < T CASE ≤ 95°C
Max.
1
3.9 μ S* 4
1
3.9 μ S* 4
7.8 μ S* 1
3.9 μ S* 4
? *
95°C < T CASE ≤ 105°C
6
3.9 μ S* 5
? * 6
t RP
t RC
t RAS
I DD0
I DD1
I DD4R
I DD4W
I DD5B
I DD6
I DD7
Precharge to Active Command Period
Active to Ref/Active Command Period
Active to Precharge Command Period
Operating one bank active-precharge current
Operating one bank active-read-precharge current
Operating burst read current
Operating burst write current
Burst refresh current
Self refresh current (T CASE ≤ 85°C)
Operating bank interleave read current
Min.
Min.
Min.
Max.
Max.
Max.
Max.
Max.
Max.
Max.
13.125 nS
58.125 nS
45 nS
105 mA
115mA
165 mA
200 mA
105 mA
6 mA
245 mA
12.5 nS
57.5 nS
45 nS
90 mA
100 mA
140 mA
165 mA
95 mA
6 mA
200 mA
15 nS
60 nS
45 nS
80 mA
90 mA
125 mA
150 mA
90 mA
6 mA
180 mA
Notes:
1. All speed grades support 0°C ≤ T CASE ≤ 85°C with full JEDEC AC and DC specifications.
2. For -18, -25 and -3 speed grades, -40°C ≤ T CASE < 0°C is not available.
3. 25I, 25A and 25K speed grades support -40°C ≤ T CASE ≤ 85°C with full JEDEC AC and DC specifications.
4. For all speed grade parts, T CASE is able to extend to 95°C with doubling Auto Refresh commands in frequency to a 32 mS
period ( t REFI = 3.9 μS) and to enter to Self Refresh mode at this high temperature range via A7 “1” on EMR (2).
5. For 25K automotive speed grade, T CASE is able to extend to 105°C with doubling Auto Refresh commands in frequency to a
32 mS period ( t REFI = 3.9 μS) and to enter to Self Refresh mode at this high temperature range via A7 “1” on EMR (2).
6. For -18, -25, 25I, 25A and -3 speed grades, 95°C < T CASE ≤ 105°C is not available.
Publication Release Date: Sep. 03, 2012
-5-
Revision A04
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W9751G6KB25A 制造商:WINBOND 制造商全称:Winbond 功能描述:Double Data Rate architecture: two data transfers per clock cycle
W9751G6KB25I 制造商:Winbond Electronics Corp 功能描述:DRAM Chip DDR2 SDRAM 512M-Bit 32Mx16 1.8V 84-Pin WBGA 制造商:Winbond Electronics Corp 功能描述:IC DDR2 SDRAM 512MBIT 2.5NS BGA
W9751G6KB25K 制造商:WINBOND 制造商全称:Winbond 功能描述:Double Data Rate architecture: two data transfers per clock cycle
W9751G6KB25TR 制造商:Winbond Electronics Corp 功能描述:512M DDR2-800, X16 制造商:Winbond 功能描述:512M DDR2-800, X16
W9751G6KB-3 制造商:WINBOND 制造商全称:Winbond 功能描述:Double Data Rate architecture: two data transfers per clock cycle
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