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| 型号： | 440EP |
| 厂商： | Applied Micro Circuits Corp. |
| 英文描述： | Power PC 440EP Embedded Processor |
| 中文描述： | 440EP的Power PC嵌入式处理器 |
| 文件页数： | 69/84页 |
| 文件大小： | 541K |
| 代理商： | 440EP |
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AMCC Proprietary
71
440EP – PPC440EP Embedded Processor
Data Sheet
Revision 1.26 – April 25, 2007
DDR1 SDRAM I/O Specifications
The DDR1 SDRAM controller times its operation with internal PLB clock signals and generates MemClkOut0 from
the PLB clock. The PLB clock is an internal signal that cannot be directly observed. However MemClkOut0 is the
same frequency as the PLB clock signal and is in phase with the PLB clock signal.
Note: MemClkOut0 can be advanced with respect to the PLB clock by means of the SDRAM0_CLKTR
programming register. In a typical system, users advance MemClkOut by 90
°. This depends on the specific
application and requires a thorough understanding of the memory system in general (refer to the DDR
SDRAM controller chapter in the PowerPC 440EP User’s Manual).
In the following sections, the label MemClkOut0(0) refers to MemClkOut0 when it has not been phase-shifted, and
MemClkOut0(90) refers to MemClkOut0 when it has been phase-advanced 90
°. Advancing MemClkOut0 by 90°
creates a 3/4 cycle setup time and 1/4 cycle hold time for the address and control signals in relation to
MemClkOut0(90). The rising edge of MemClkOut0(90) aligns with the first rising edge of the DQS signal.
The following DDR data is generated by means of simulation and includes logic, driver, package RLC, and lengths.
Values are calculated over best case and worst case processes with speed, temperature, and voltage as follows:
Best Case = Fast process, -40
°C, +1.6V
Worst Case = Slow process, +85
°C, +1.4V
Note: In all the following DDR tables and timing diagrams, minimum values are measured under best case
conditions and maximum values are measured under worst case conditions.
The signals are terminated as indicated in the figure below for the DDR timing data in the following sections.
Figure 7. DDR SDRAM Simulation Signal Termination Model
10pF
MemClkOut0
120
Ω
50
Ω
30pF
Addr/Ctrl/Data/DQS
VTT = SVDD/2
PPC440EP
Note: This diagram illustrates the model of the DDR SDRAM interface used when generating simulation timing data.
It is not a recommended physical circuit design for this interface. An actual interface design will depend on many
factors, including the type of memory used and the board layout.
相关PDF资料 |
PDF描述 |
|---|---|
| 440GP | Power PC 440GP Embedded Processor |
| 440GRX | PowerPC 440GRx Embedded Processor |
| 440GR | Power PC 440GR Embedded Processor |
| 440GX | Power PC 440GX Embedded Processor |
| 440SPE | PowerPC 440SPe Embedded Processor |
相关代理商/技术参数 |
参数描述 |
|---|---|
| 440E-P13045 | 制造商:ALLEN-BRADLEY 制造商全称:Allen-Bradley 功能描述:440H-P03035 |
| 440EPX | 制造商:AMCC 制造商全称:Applied Micro Circuits Corporation 功能描述:PowerPC 440EPx Embedded Processor |
| 440ES001B1434-4 | 功能描述:环形MIL规格后盖 CRIMIP RING ADPTR DC STRAIGHT RoHS:否 制造商:Amphenol PCD MIL 类型:MIL-DTL-38999 III, IV 系列:AS85049 产品类型:Environmental EMI/RFI Backshells 外壳类型:Straight 外壳大小:18 外壳材质:Aluminum Alloy |
| 440ES031M1633-3B | 功能描述:环形MIL规格后盖 BND/SHRNK BOOT ADPTR DC STRAIGHT BAND RoHS:否 制造商:Amphenol PCD MIL 类型:MIL-DTL-38999 III, IV 系列:AS85049 产品类型:Environmental EMI/RFI Backshells 外壳类型:Straight 外壳大小:18 外壳材质:Aluminum Alloy |
| 440ES031M2003-3B | 功能描述:环形MIL规格后盖 BND/SHRNK BOOT ADPTR DC STRAIGHT BAND RoHS:否 制造商:Amphenol PCD MIL 类型:MIL-DTL-38999 III, IV 系列:AS85049 产品类型:Environmental EMI/RFI Backshells 外壳类型:Straight 外壳大小:18 外壳材质:Aluminum Alloy |
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