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参数资料
| 型号： | IXGN82N120B3H1 |
| 厂商： | IXYS |
| 文件页数： | 2/6页 |
| 文件大小： | 0K |
| 描述： | IGBT 1200V 145A SOT-227 |
| 标准包装： | 10 |
| 系列： | GenX3™ |
| IGBT 类型： | PT |
| 配置： | 单一 |
| 电压 - 集电极发射极击穿（最大）： | 1200V |
| Vge, Ic时的最大Vce（开）： | 3.2V @ 15V，82A |
| 电流 - 集电极 (Ic)（最大）： | 145A |
| 电流 - 集电极截止（最大）： | 50µA |
| Vce 时的输入电容 (Cies)： | 7.9nF @ 25V |
| 功率 - 最大： | 595W |
| 输入： | 标准 |
| NTC 热敏电阻： | 无 |
| 安装类型： | 底座安装 |
| 封装/外壳： | SOT-227-4，miniBLOC |
| 供应商设备封装： | SOT-227B |
IXGN82N120B3H1
Symbol Test Conditions
(T J = 25 ° C, Unless Otherwise Specified)
Characteristic Values
Min. Typ. Max.
SOT-227B miniBLOC (IXGN)
g fs
C ies
C oes
C res
Q g(on)
Q ge
Q gc
t d(on)
t ri
E on
t d(off)
t fi
E off
t d(on)
t ri
E on
t d(off)
t fi
E off
I C = 60A, V CE = 10V, Note 2
V CE = 25V, V GE = 0V, f = 1 MHz
I C = 82A, V GE = 15V, V CE = 0.5 ? V CES
Inductive load, T J = 25°C
I C = 80A, V GE = 15V
V CE = 600V, R G = 2 Ω
Note 3
Inductive load, T J = 125°C
I C = 80A, V GE = 15V
V CE = 600V, R G = 2 Ω
Note 3
35
60
7900
640
170
350
50
150
30
77
5.0
210
100
3.3
32
80
6.8
240
520
7.1
6.2
S
pF
pF
pF
nC
nC
nC
ns
ns
mJ
ns
ns
mJ
ns
ns
mJ
ns
ns
mJ
R thJC
0.21 °C/W
R thCK
Reverse Diode (FRED)
0.05
°C/W
Symbol Test Conditions
(T J = 25 ° C, Unless Otherwise Specified)
Characteristic Values
Min. Typ. Max.
V F
I F = 60A, V GE = 0V, Note 2
T J = 150°C
1.85
1.90
2.5
V
V
t rr
I RM
R thJC
I F = 60A, V GE = 0V,
-di F /dt = 350A/ μ s, V R = 600V, T J = 100°C
200
24.6
ns
A
0.42 °C/W
Notes:
1. Part must be heatsunk for high-temp Ices measurement.
2. Pulse test, t ≤ 300 μ s, duty cycle, d ≤ 2%.
3. Switching times & energy losses may increase for higher V CE (Clamp), T J or R G .
ADVANCE TECHNICAL INFORMATION
The product presented herein is under development. The Technical Specifications offered are derived
from a subjective evaluation of the design, based upon prior knowledge and experience, and constitute a
"considered reflection" of the anticipated result. IXYS reserves the right to change limits, test
conditions, and dimensions without notice.
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
IXYS MOSFETs and IGBTs are covered
4,835,592
4,931,844
5,049,961
5,237,481
6,162,665
6,404,065 B1
6,683,344 6,727,585 7,005,734 B2
7,157,338B2
by one or moreof the following U.S. patents: 4,850,072
5,017,508
5,063,307
5,381,025
6,259,123 B1
6,534,343
6,710,405 B2 6,759,692 7,063,975 B2
4,881,106
5,034,796
5,187,117
5,486,715
6,306,728 B1
6,583,505
6,710,463
6,771,478 B2 7,071,537
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相关代理商/技术参数 |
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| IXGN82N120C3H1 | 功能描述:IGBT 晶体管 130Amps 1200V RoHS:否 制造商:Fairchild Semiconductor 配置: 集电极—发射极最大电压 VCEO:650 V 集电极—射极饱和电压:2.3 V 栅极/发射极最大电压:20 V 在25 C的连续集电极电流:150 A 栅极—射极漏泄电流:400 nA 功率耗散:187 W 最大工作温度: 封装 / 箱体:TO-247 封装:Tube |
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| IXGP10N100A | 制造商:未知厂家 制造商全称:未知厂家 功能描述:TRANSISTOR | IGBT | N-CHAN | 1KV V(BR)CES | 20A I(C) | TO-220AB |
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| IXGP10N50A | 制造商:未知厂家 制造商全称:未知厂家 功能描述:TRANSISTOR | IGBT | N-CHAN | 500V V(BR)CES | 20A I(C) | TO-220AB |
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