- 您现在的位置：买卖IC网 > Datasheet目录369 > W9751G6IB-25 (Winbond Electronics)IC DDR2-800 SDRAM 512MB 84-WBGA Datasheet资料下载
参数资料
| 型号： | W9751G6IB-25 |
| 厂商： | Winbond Electronics |
| 文件页数： | 41/86页 |
| 文件大小： | 0K |
| 描述： | IC DDR2-800 SDRAM 512MB 84-WBGA |
| 标准包装： | 210 |
| 格式 - 存储器： | RAM |
| 存储器类型： | DDR2 SDRAM |
| 存储容量： | 512M（32Mx16） |
| 速度： | 2.5ns |
| 接口： | 并联 |
| 电源电压： | 1.7 V ~ 1.9 V |
| 工作温度： | 0°C ~ 85°C |
| 封装/外壳： | 84-TFBGA |
| 供应商设备封装： | 84-WBGA（8x12.5） |
| 包装： | 托盘 |
第1页第2页第3页第4页第5页第6页第7页第8页第9页第10页第11页第12页第13页第14页第15页第16页第17页第18页第19页第20页第21页第22页第23页第24页第25页第26页第27页第28页第29页第30页第31页第32页第33页第34页第35页第36页第37页第38页第39页第40页当前第41页第42页第43页第44页第45页第46页第47页第48页第49页第50页第51页第52页第53页第54页第55页第56页第57页第58页第59页第60页第61页第62页第63页第64页第65页第66页第67页第68页第69页第70页第71页第72页第73页第74页第75页第76页第77页第78页第79页第80页第81页第82页第83页第84页第85页第86页
W9751G6IB
Operating Burst Read Current
All banks open, Continuous burst reads, I OUT = 0 mA;
I DD4R
BL = 4, CL = CL (IDD), AL = 0;
t CK = t CK(IDD) ; t RAS = t RASmax(IDD) , t RP = t RP(IDD) ;
CKE is HIGH, CS is HIGH between valid commands;
176
176
155
mA
1,2,3,4,
5,6
Address inputs are SWITCHING;
Data Bus inputs are SWITCHING.
Operating Burst Write Current
All banks open, Continuous burst writes;
I DD4W
BL = 4, CL = CL (IDD), AL = 0;
t CK = t CK(IDD) ; t RAS = t RASmax(IDD) , t RP = t RP(IDD) ;
CKE is HIGH, CS is HIGH between valid commands;
175
175
160
mA
1,2,3,4,
5,6
Address inputs are SWITCHING;
Data Bus inputs are SWITCHING.
Burst Refresh Current
t CK = t CK(IDD) ;
I DD5B
Refresh command every t RFC(IDD) interval;
CKE is HIGH, CS is HIGH between valid commands;
135
135
125
mA
1,2,3,4,
5,6
Other control and address inputs are SWITCHING;
Data bus inputs are SWITCHING.
Self Refresh Current
I DD6
CKE ≦ 0.2 V, external clock off, CLK and CLK at 0 V;
Other control and address inputs are FLOATING;
7
7
7
mA
1,2,3,4,
5,6
Data bus inputs are FLOATING.
Operating Bank Interleave Read Current
All bank interleaving reads, I OUT = 0mA;
BL = 4, CL = CL (IDD), AL = t RCD(IDD) - 1 x t CK(IDD) ;
I DD7
t CK = t CK(IDD) , t RC = t RC(IDD) , t RRD = t RRD(IDD) , t RCD =
t RCD(IDD) ;
300
300
290
mA
1,2,3,4,
5,6
CKE is HIGH, CS is HIGH between valid commands;
Address bus inputs are STABLE during deselects;
Data Bus inputs are SWITCHING.
Notes:
1.
2.
3.
4.
V DD = 1.8 V ± 0.1V; V DDQ = 1.8 V ± 0.1V.
I DD specifications are tested after the device is properly initialized.
Input slew rate is specified by AC Parametric Test Condition.
I DD parameters are specified with ODT disabled.
5. Data Bus consists of DQ, LDM, UDM, LDQS, LDQS , UDQS and UDQS .
6. Definitions for I DD
LOW = V in ≦ V IL (ac) (max)
HIGH = V in ≧ V IH (ac) (min)
STABLE = inputs stable at a HIGH or LOW level
FLOATING = inputs at V REF = V DDQ /2
SWITCHING = inputs changing between HIGH and LOW every other clock cycle (once per two clocks) for address and
control signals, and inputs changing between HIGH and LOW every other data transfer (once per clock)
for DQ signals not including masks or strobes.
Publication Release Date: Oct. 23, 2009
- 41 -
Revision A06
相关PDF资料 |
PDF描述 |
|---|---|
| W9751G6KB-25 | IC DDR2 SDRAM 512MBIT 84WBGA |
| W9812G6JH-6I | IC SDRAM 128MBIT 54TSOPII |
| W9816G6IH-6I | IC SDRAM 16MBIT 50TSOPII |
| W9825G6JH-6I | IC SDRAM 256MBIT 54TSOPII |
| W9864G6JH-6I | IC SDRAM 64MBIT 54TSOPII |
相关代理商/技术参数 |
参数描述 |
|---|---|
| W9751G6JB | 制造商:WINBOND 制造商全称:Winbond 功能描述:8M ? 4 BANKS ? 16 BIT DDR2 SDRAM |
| W9751G6JB-25 | 制造商:Winbond Electronics Corp 功能描述:512GB DDRII |
| W9751G6JB-3 | 制造商:Winbond Electronics Corp 功能描述:512MB DDRII |
| W9751G6KB | 制造商:WINBOND 制造商全称:Winbond 功能描述:8M ? 4 BANKS ? 16 BIT DDR2 SDRAM |
| W9751G6KB-18 | 制造商:Winbond Electronics Corp 功能描述:IC MEMORY |
发布紧急采购，3分钟左右您将得到回复。