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| 型号： | W9425G6EH-5 |
| 厂商： | Winbond Electronics |
| 文件页数： | 35/54页 |
| 文件大小： | 0K |
| 描述： | IC DDR-400 SDRAM 256MB 66TSSOPII |
| 标准包装： | 108 |
| 格式 - 存储器： | RAM |
| 存储器类型： | DDR SDRAM |
| 存储容量： | 256M（16Mx16） |
| 速度： | 250MHz |
| 接口： | 并联 |
| 电源电压： | 2.3 V ~ 2.7 V |
| 工作温度： | 0°C ~ 70°C |
| 封装/外壳： | 66-TSSOP（0.400"，10.16mm 宽） |
| 供应商设备封装： | 66-TSOP II |
| 包装： | 托盘 |
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W9425G6EH
g. TSOP II package devices only.
h. Only intended for operation up to 266 Mbps per pin.
i. A derating factor will be used to increase t IS and t IH in the case where the input slew rate is below
0.5 V/nS as shown in Table 2. The Input slew rate is based on the lesser of the slew rates
determined by either V IH(AC) to V IL(AC) or V IH(DC) to V IL(DC) , similarly for rising transitions.
j. A derating factor will be used to increase t DS and t DH in the case where DQ, DM, and DQS slew
rates differ, as shown in Tables 3 & 4. Input slew rate is based on the larger of AC-AC delta rise,
fall rate and DC-DC delta rise, fall rate. Input slew rate is based on the lesser of the slew rates
determined by either V IH(AC) to V IL(AC) or V IH(DC) to V IL(DC) , similarly for rising transitions.
The delta rise/fall rate is calculated as:
{1/(Slew Rate1)}-{1/(slew Rate2)}
For example: If Slew Rate 1 is 0.5 V/nS and Slew Rate 2 is 0.4 V/nS, then the delta rise, fall rate is
-0.5 nS/V. Using the table given, this would result in the need for an increase in t DS and t DH of 100
pS.
k. Table 3 is used to increase t DS and t DH in the case where the I/O slew rate is below 0.5 V/nS. The
I/O slew rate is based on the lesser of the AC-AC slew rate and the DC-DC slew rate. The input
slew rate is based on the lesser of the slew rates determined by either V IH(AC) to V IL(AC) or V IH(DC)
to V IL(DC) , and similarly for rising transitions.
m. DQS, DM, and DQ input slew rate is specified to prevent double clocking of data and preserve
setup and hold times. Signal transitions through the DC region must be monotonic.
Publication Release Date:Dec. 03, 2008
- 35 -
Revision A08
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相关代理商/技术参数 |
参数描述 |
|---|---|
| W9425G6EH-5I | 制造商:Winbond Electronics Corp 功能描述: |
| W9425G6JB-5 | 制造商:Winbond Electronics Corp 功能描述:DRAM Chip DDR SDRAM 256M-Bit 16Mx16 2.5V 60-Pin TFBGA 制造商:Winbond Electronics 功能描述:IC MEMORY 制造商:Winbond Electronics Corp 功能描述:IC MEMORY 制造商:Winbond 功能描述:16MX16,256Mb DDRI DRAM ,200MHZ, BGA |
| W9425G6JB-5 TR | 制造商:Winbond Electronics Corp 功能描述:256M DDR SDRAM X16, 200MHZ |
| W9425G6JB-5I | 制造商:Winbond Electronics Corp 功能描述:DRAM Chip DDR SDRAM 256M-Bit 16Mx16 2.5V 制造商:Winbond Electronics 功能描述:IC MEMORY 制造商:Winbond Electronics Corp 功能描述:IC MEMORY |
| W9425G6JB-5I TR | 制造商:Winbond Electronics Corp 功能描述:256M DDR SDRAM X16, 200MHZ, IN |
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