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| 型号： | W9425G6EH-5 |
| 厂商： | Winbond Electronics |
| 文件页数： | 1/54页 |
| 文件大小： | 0K |
| 描述： | IC DDR-400 SDRAM 256MB 66TSSOPII |
| 标准包装： | 108 |
| 格式 - 存储器： | RAM |
| 存储器类型： | DDR SDRAM |
| 存储容量： | 256M（16Mx16） |
| 速度： | 250MHz |
| 接口： | 并联 |
| 电源电压： | 2.3 V ~ 2.7 V |
| 工作温度： | 0°C ~ 70°C |
| 封装/外壳： | 66-TSSOP（0.400"，10.16mm 宽） |
| 供应商设备封装： | 66-TSOP II |
| 包装： | 托盘 |
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W9425G6EH
4 M × 4 BANKS × 16 BITS DDR SDRAM
Table of Contents-
1.
2.
3.
4.
5.
6.
7.
GENERAL DESCRIPTION.............................................................................................................................4
FEATURES ....................................................................................................................................................4
KEY PARAMETERS ......................................................................................................................................5
PIN CONFIGURATION ..................................................................................................................................6
PIN DESCRIPTION........................................................................................................................................7
BLOCK DIAGRAM .........................................................................................................................................8
FUNCTIONAL DESCRIPTION.......................................................................................................................9
7.1
7.2
Power Up Sequence ..........................................................................................................................9
Command Function ..........................................................................................................................10
7.2.1
7.2.2
7.2.3
7.2.4
7.2.5
7.2.6
7.2.7
7.2.8
7.2.9
Bank Activate Command ......................................................................................................10
Bank Precharge Command ..................................................................................................10
Precharge All Command ......................................................................................................10
Write Command ...................................................................................................................10
Write with Auto-precharge Command...................................................................................10
Read Command ...................................................................................................................10
Read with Auto-precharge Command ..................................................................................10
Mode Register Set Command ..............................................................................................11
Extended Mode Register Set Command ..............................................................................11
7.2.10 No-Operation Command ......................................................................................................11
7.2.11 Burst Read Stop Command..................................................................................................11
7.2.12 Device Deselect Command ..................................................................................................11
7.2.13 Auto Refresh Command .......................................................................................................11
7.2.14 Self Refresh Entry Command...............................................................................................12
7.2.15 Self Refresh Exit Command .................................................................................................12
7.2.16 Data Write Enable /Disable Command .................................................................................12
7.3
7.4
7.5
7.6
7.7
7.8
7.9
7.10
Read Operation ................................................................................................................................12
Write Operation ................................................................................................................................13
Precharge.........................................................................................................................................13
Burst Termination .............................................................................................................................13
Refresh Operation ............................................................................................................................13
Power Down Mode ...........................................................................................................................14
Input Clock Frequency Change during Precharge Power Down Mode ............................................14
Mode Register Operation .................................................................................................................14
7.10.1 Burst Length field (A2 to A0) ................................................................................................14
7.10.2 Addressing Mode Select (A3)...............................................................................................15
Publication Release Date:Dec. 03, 2008
-1-
Revision A08
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相关代理商/技术参数 |
参数描述 |
|---|---|
| W9425G6EH-5I | 制造商:Winbond Electronics Corp 功能描述: |
| W9425G6JB-5 | 制造商:Winbond Electronics Corp 功能描述:DRAM Chip DDR SDRAM 256M-Bit 16Mx16 2.5V 60-Pin TFBGA 制造商:Winbond Electronics 功能描述:IC MEMORY 制造商:Winbond Electronics Corp 功能描述:IC MEMORY 制造商:Winbond 功能描述:16MX16,256Mb DDRI DRAM ,200MHZ, BGA |
| W9425G6JB-5 TR | 制造商:Winbond Electronics Corp 功能描述:256M DDR SDRAM X16, 200MHZ |
| W9425G6JB-5I | 制造商:Winbond Electronics Corp 功能描述:DRAM Chip DDR SDRAM 256M-Bit 16Mx16 2.5V 制造商:Winbond Electronics 功能描述:IC MEMORY 制造商:Winbond Electronics Corp 功能描述:IC MEMORY |
| W9425G6JB-5I TR | 制造商:Winbond Electronics Corp 功能描述:256M DDR SDRAM X16, 200MHZ, IN |
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