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| 型号： | VND5E012AYTR-E |
| 厂商： | STMICROELECTRONICS |
| 元件分类： | 模拟信号调理 |
| 英文描述： | SPECIALTY ANALOG CIRCUIT, PDSO36 |
| 封装： | ROHS COMPLIANT, SSOP-36 |
| 文件页数： | 1/37页 |
| 文件大小： | 924K |
| 代理商： | VND5E012AYTR-E |
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October 2009
Doc ID 13621 Rev 2
1/37
1
VND5E012AY-E
Double channel high side driver with analog current sense
for automotive applications
Features
■ General:
– Inrush current active management by
power limitation
– Very low standby current
– 3.0V CMOS compatible input
– Optimized electromagnetic emission
– Very low electromagnetic susceptibility
– In compliance with the 2002/95/EC
european directive
– Proportional load current sense
– High current sense precision for wide range
current
– Very low current sense leakage
■ Diagnostic functions:
– Off-state open load detection
– Current sense disable
– Thermal shutdown indication
– Output short to Vcc detection
– Overload and short to ground (power
limitation) indication
■ Protection:
– Undervoltage shutdown
– Overvoltage clamp
– Load current limitation
– Self limiting of fast thermal transients
– Protection against loss of ground and loss
of VCC
– Thermal shutdown
– Reverse battery protection with self switch
of the Power MOS
– Electrostatic discharge protection
Applications
■ All types of resistive, inductive and capacitive
loads
■ Suitable as LED driver
Description
The VND5E012AY-E is a device made using
STMicroelectronics VIPower M0-5 technology.
It is intended for driving resistive or inductive
loads with one side connected to ground. Active
VCC pin voltage clamp protects the device against
low energy spikes (see ISO7637 transient
compatibility table).
This device integrates an analog current sense
which delivers a current proportional to the load
current when CS_DIS high leads the current
sense pin in high impedance.
Fault conditions such as overload,
overtemperature or openload are reported via the
current sense pin
Output current limitation protects the device in
overload condition. In case of long overload
duration, the device limits the dissipated power to
safe level up to thermal shutdown intervention.
Thermal shutdown with automatic restart allows
the device to recover normal operation as soon as
fault condition disappears.
Max transient supply voltage
VCC
41V
Operating voltage range
VCC 4.5 to 28V
Max on-state resistance (per ch.)
RON
12 m
Ω
Current limitation (typ)
ILIMH
74 A
Off-state supply current
IS
2
μA(1)
1.
Typical value with all loads connected
PowerSSO-36
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相关代理商/技术参数 |
参数描述 |
|---|---|
| VND5E012MY-E | 功能描述:功率驱动器IC DBLE CH HI-SIDE DRVR W/ANALOG CRRNT SNSE RoHS:否 制造商:Micrel 产品:MOSFET Gate Drivers 类型:Low Cost High or Low Side MOSFET Driver 上升时间: 下降时间: 电源电压-最大:30 V 电源电压-最小:2.75 V 电源电流: 最大功率耗散: 最大工作温度:+ 85 C 安装风格:SMD/SMT 封装 / 箱体:SOIC-8 封装:Tube |
| VND5E012MYTR-E | 功能描述:功率驱动器IC DBLE CH HI-SIDE DRVR W/ANALOG CRRNT SNSE RoHS:否 制造商:Micrel 产品:MOSFET Gate Drivers 类型:Low Cost High or Low Side MOSFET Driver 上升时间: 下降时间: 电源电压-最大:30 V 电源电压-最小:2.75 V 电源电流: 最大功率耗散: 最大工作温度:+ 85 C 安装风格:SMD/SMT 封装 / 箱体:SOIC-8 封装:Tube |
| VND5E025AK-E | 功能描述:功率驱动器IC DBL CH hi side drive RoHS:否 制造商:Micrel 产品:MOSFET Gate Drivers 类型:Low Cost High or Low Side MOSFET Driver 上升时间: 下降时间: 电源电压-最大:30 V 电源电压-最小:2.75 V 电源电流: 最大功率耗散: 最大工作温度:+ 85 C 安装风格:SMD/SMT 封装 / 箱体:SOIC-8 封装:Tube |
| VND5E025AKTR-E | 功能描述:功率驱动器IC DBL CH hi side drive RoHS:否 制造商:Micrel 产品:MOSFET Gate Drivers 类型:Low Cost High or Low Side MOSFET Driver 上升时间: 下降时间: 电源电压-最大:30 V 电源电压-最小:2.75 V 电源电流: 最大功率耗散: 最大工作温度:+ 85 C 安装风格:SMD/SMT 封装 / 箱体:SOIC-8 封装:Tube |
| VND5E025ASTR-E | 功能描述:功率驱动器IC Double CH High-Side 41V 25mOhm 60A RoHS:否 制造商:Micrel 产品:MOSFET Gate Drivers 类型:Low Cost High or Low Side MOSFET Driver 上升时间: 下降时间: 电源电压-最大:30 V 电源电压-最小:2.75 V 电源电流: 最大功率耗散: 最大工作温度:+ 85 C 安装风格:SMD/SMT 封装 / 箱体:SOIC-8 封装:Tube |
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