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参数资料
| 型号： | MRF5S9150HR3 |
| 厂商： | FREESCALE SEMICONDUCTOR INC |
| 元件分类： | 功率晶体管 |
| 英文描述： | UHF BAND, Si, N-CHANNEL, RF POWER, MOSFET |
| 封装： | ROHS COMPLIANT, NI-780, CASE 465-06, 2 PIN |
| 文件页数： | 9/12页 |
| 文件大小： | 462K |
| 代理商： | MRF5S9150HR3 |
AR
C
HIVE
INF
O
RMA
TI
O
N
ARCHIVE
INFORMA
TION
6
RF Device Data
Freescale Semiconductor
MRF5S9150HR3
TYPICAL CHARACTERISTICS
Figure 7. Intermodulation Distortion Products
versus Output Power
100
-90
-1 0
Pout, OUTPUT POWER (WATTS) PEP
-3 0
-4 0
-5 0
-6 0
400
IMD,
INTERMODULA
TION
DIST
OR
TION
(dBc)
VDD = 28 Vdc, IDQ = 1500 mA
f1 = 880 MHz, f2 = 880.1 MHz
Two-Tone Measurements
-2 0
1
Figure 8. Intermodulation Distortion Products
versus Tone Spacing
10
-60
0
7th Order
TWO-T ONE SPACING (MHz)
5th Order
3rd Order
-2 0
-3 0
-4 0
1
100
IMD,
INTERMODULA
TION
DIST
OR
TION
(dBc)
-1 0
0.1
VDD = 28 Vdc, Pout = 150 W (PEP)
IDQ = 1500 mA, Two-Tone Measurements
(f1 + f2)/2 = Center Frequency of 880 MHz
Figure 9. Pulse CW Output Power versus
Input Power
41
61
Pin, INPUT POWER (dBm)
VDD = 28 Vdc, IDQ = 1500 mA
Pulsed CW, 8
μsec(on), 1 msec(off)
f = 880 MHz
59
57
53
45
31
29
33
Actual
Ideal
55
25
P
out
,OUTPUT
POWER
(dBm)
27
P3dB = 53.84 dBm (242.1 W)
P1dB = 52.87 dBm (193.64 W)
ACPR,
ADJACENT
CHANNEL
POWER
RA
TIO
(dBc)
AL
T1,
CHANNEL
POWER
(dBc)
Figure 10. Single-Carrier N-CDMA ACPR, ALT1, Power Gain
and Drain Efficiency versus Output Power
0
-80
Pout, OUTPUT POWER (WATTS) AVG.
60
-20
40
-40
30
-50
20
-60
-70
110
10
VDD = 28 Vdc, IDQ = 1500 mA
f = 880 MHz, N-CDMA IS-95
(Pilot, Sync, Paging, Traffic Codes
8 Through 13)
Gps
η
D
,DRAIN
EFFICIENCY
(%),
G
ps
,POWER
GAIN
(dB)
ηD
ACPR
ALT1
TC = -30 _C
25
_C
300
85
_C
-7 0
7th Order
5th Order
3rd Order
-8 0
10
-5 0
51
49
47
35
37
39
P6dB = 54.52 dBm (283.14 W)
50
100
-30
25
_C
-30
_C
-30
_C
85
_C
85
_C
25
_C
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相关代理商/技术参数 |
参数描述 |
|---|---|
| MRF5S9150HR3_09 | 制造商:FREESCALE 制造商全称:Freescale Semiconductor, Inc 功能描述:RF Power Field Effect Transistor |
| MRF5S9150HR5 | 功能描述:射频MOSFET电源晶体管 HV5 900MHZ 150W NI780H RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶体管极性: 频率:1800 MHz to 2000 MHz 增益:27 dB 输出功率:100 W 汲极/源极击穿电压: 漏极连续电流: 闸/源击穿电压: 最大工作温度: 封装 / 箱体:NI-780-4 封装:Tray |
| MRF5S9150HSR3 | 功能描述:射频MOSFET电源晶体管 HV5 900MHZ 150W NI780HS RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶体管极性: 频率:1800 MHz to 2000 MHz 增益:27 dB 输出功率:100 W 汲极/源极击穿电压: 漏极连续电流: 闸/源击穿电压: 最大工作温度: 封装 / 箱体:NI-780-4 封装:Tray |
| MRF5S9150HSR5 | 功能描述:射频MOSFET电源晶体管 HV5 900MHZ 150W NI780HS RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶体管极性: 频率:1800 MHz to 2000 MHz 增益:27 dB 输出功率:100 W 汲极/源极击穿电压: 漏极连续电流: 闸/源击穿电压: 最大工作温度: 封装 / 箱体:NI-780-4 封装:Tray |
| MRF6.3 | 制造商:Ferraz Shawmut 功能描述: |
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