参数资料
型号: MRF5S9150HR3
厂商: FREESCALE SEMICONDUCTOR INC
元件分类: 功率晶体管
英文描述: UHF BAND, Si, N-CHANNEL, RF POWER, MOSFET
封装: ROHS COMPLIANT, NI-780, CASE 465-06, 2 PIN
文件页数: 10/12页
文件大小: 462K
代理商: MRF5S9150HR3
AR
C
HIVE
INF
O
RMA
TI
O
N
ARCHIVE
INFORMA
TION
MRF5S9150HR3
7
RF Device Data
Freescale Semiconductor
TYPICAL CHARACTERISTICS
η
D,
DRAIN
EFFICIENCY
(%)
Figure 11. Power Gain and Drain Efficiency
versus CW Output Power
16
0
Pout, OUTPUT POWER (WATTS) CW
23
70
21
60
20
50
30
20
0.1
10
100
VDD = 28 Vdc
IDQ = 1500 mA
f = 880 MHz
Gps
G
ps
,POWER
GAIN
(dB)
22
10
TC = -30 _C
-30
_C
25
_C
85
_C
19
18
40
85
_C
Figure 12. Power Gain versus Output Power
Pout, OUTPUT POWER (WATTS) CW
G
ps
,POWER
GAIN
(dB)
VDD = 12 V
16 V
250
16
21
0
200
50
100
150
19
IDQ = 1500 mA
f = 880 MHz
20 V
24 V
28 V
32 V
17
ηD
20
18
17
1
300
210
1010
TJ, JUNCTION TEMPERATURE (°C)
This above graph displays calculated MTTF in hours x ampere2
drain current. Life tests at elevated temperatures have correlated to
better than
±10% of the theoretical prediction for metal failure. Divide
MTTF factor by ID2 for MTTF in a particular application.
108
107
MTTF
FACT
OR
(HOURS
X
AMPS
2 )
90
110
130
150
170
190
100
120
140
160
180
200
109
Figure 13. MTTF Factor versus Junction Temperature
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相关代理商/技术参数
参数描述
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