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参数资料
| 型号： | MRF5S9150HR3 |
| 厂商： | FREESCALE SEMICONDUCTOR INC |
| 元件分类： | 功率晶体管 |
| 英文描述： | UHF BAND, Si, N-CHANNEL, RF POWER, MOSFET |
| 封装： | ROHS COMPLIANT, NI-780, CASE 465-06, 2 PIN |
| 文件页数： | 12/12页 |
| 文件大小： | 462K |
| 代理商： | MRF5S9150HR3 |
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MRF5S9150HR3
9
RF Device Data
Freescale Semiconductor
Zo = 5 Ω
Zload
Zsource
f = 910 MHz
f = 850 MHz
f = 910 MHz
f = 850 MHz
VDD = 28 Vdc, IDQ = 1500 mA, Pout = 33 W Avg.
f
MHz
Zsource
W
Zload
W
850
3.61 - j2.30
1.12 + j0.09
865
2.85 - j2.54
1.24 + j0.22
880
2.13 - j2.47
1.31 + j0.36
895
1.53 - j2.27
1.46 + j0.48
910
1.02 - j1.90
1.61 + j0.53
Zsource = Test circuit impedance as measured from
gate to ground.
Zload
= Test circuit impedance as measured
from drain to ground.
Figure 16. Series Equivalent Source and Load Impedance
Z
source
Z
load
Input
Matching
Network
Device
Under
Test
Output
Matching
Network
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相关代理商/技术参数 |
参数描述 |
|---|---|
| MRF5S9150HR3_09 | 制造商:FREESCALE 制造商全称:Freescale Semiconductor, Inc 功能描述:RF Power Field Effect Transistor |
| MRF5S9150HR5 | 功能描述:射频MOSFET电源晶体管 HV5 900MHZ 150W NI780H RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶体管极性: 频率:1800 MHz to 2000 MHz 增益:27 dB 输出功率:100 W 汲极/源极击穿电压: 漏极连续电流: 闸/源击穿电压: 最大工作温度: 封装 / 箱体:NI-780-4 封装:Tray |
| MRF5S9150HSR3 | 功能描述:射频MOSFET电源晶体管 HV5 900MHZ 150W NI780HS RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶体管极性: 频率:1800 MHz to 2000 MHz 增益:27 dB 输出功率:100 W 汲极/源极击穿电压: 漏极连续电流: 闸/源击穿电压: 最大工作温度: 封装 / 箱体:NI-780-4 封装:Tray |
| MRF5S9150HSR5 | 功能描述:射频MOSFET电源晶体管 HV5 900MHZ 150W NI780HS RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶体管极性: 频率:1800 MHz to 2000 MHz 增益:27 dB 输出功率:100 W 汲极/源极击穿电压: 漏极连续电流: 闸/源击穿电压: 最大工作温度: 封装 / 箱体:NI-780-4 封装:Tray |
| MRF6.3 | 制造商:Ferraz Shawmut 功能描述: |
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