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参数资料
| 型号： | MRF5S9150HR3 |
| 厂商： | FREESCALE SEMICONDUCTOR INC |
| 元件分类： | 功率晶体管 |
| 英文描述： | UHF BAND, Si, N-CHANNEL, RF POWER, MOSFET |
| 封装： | ROHS COMPLIANT, NI-780, CASE 465-06, 2 PIN |
| 文件页数： | 8/12页 |
| 文件大小： | 462K |
| 代理商： | MRF5S9150HR3 |
AR
C
HIVE
INF
O
RMA
TI
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N
ARCHIVE
INFORMA
TION
MRF5S9150HR3
5
RF Device Data
Freescale Semiconductor
TYPICAL CHARACTERISTICS
-23
-3
-8
-13
-28
G
ps
,POWER
GAIN
(dB)
IRL,
INPUT
RETURN
LOSS
(dB)
ACPR
(dBc),
AL
T1
(dBc)
920
840
IRL
Gps
ACPR
f, FREQUENCY (MHz)
Figure 3. Single-Carrier N-CDMA Broadband Performance
@ Pout = 33 Watts Avg.
890
880
870
860
850
-65
32
28
24
-40
-50
-55
η
D
,DRAIN
EFFICIENCY
(%)
ηD
-60
-45
26
30
20
19.6
18.8
18
17.2
16
16.8
17.6
18.4
19.2
ALT1
16.4
VDD = 28 Vdc, Pout = 33 W (Avg.)
IDQ = 1500 mA, N-CDMA IS-95
(Pilot, Sync, Paging, Traffic Codes
8 Through 13)
900
910
-18
-23
-8
-13
-18
-28
G
ps
,POWER
GAIN
(dB)
IRL,
INPUT
RETURN
LOSS
(dB)
ACPR
(dBc),
AL
T1
(dBc)
920
840
IRL
Gps
ACPR
f, FREQUENCY (MHz)
Figure 4. Single-Carrier N-CDMA Broadband Performance
@ Pout = 66 Watts Avg.
890
880
870
860
850
-60
43
39
35
-35
-45
-50
η
D
,DRAIN
EFFICIENCY
(%)
ηD
-55
-40
37
41
19.5
19
18
17
16
14.5
15.5
16.5
17.5
18.5
ALT1
15
VDD = 28 Vdc, Pout = 66 W (Avg.)
IDQ = 1500 mA, N-CDMA IS-95
(Pilot, Sync, Paging, Traffic Codes
8 Through 13)
900
910
-3
Figure 5. Two-T one Power Gain versus
Output Power
100
16
22
1
IDQ = 2250 mA
1875 mA
Pout, OUTPUT POWER (WATTS) PEP
20
18
10
400
G
ps
,POWER
GAIN
(dB)
750 mA
VDD = 28 Vdc
f1 = 880 MHz, f2 = 880.1 MHz
Two-Tone Measurements
21
19
17
1500 mA
1125 mA
Figure 6. Third Order Intermodulation Distortion
versus Output Power
100
-70
-10
1
IDQ = 750 mA
1875 mA
Pout, OUTPUT POWER (WATTS) PEP
-30
-50
10
400
VDD = 28 Vdc
f1 = 880 MHz, f2 = 880.1 MHz
Two-Tone Measurements
-20
-40
-60
1500 mA
2250 mA
1125 mA
INTERMODULA
TION
DIST
OR
TION
(dBc)
IMD,
THIRD
ORDER
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相关代理商/技术参数 |
参数描述 |
|---|---|
| MRF5S9150HR3_09 | 制造商:FREESCALE 制造商全称:Freescale Semiconductor, Inc 功能描述:RF Power Field Effect Transistor |
| MRF5S9150HR5 | 功能描述:射频MOSFET电源晶体管 HV5 900MHZ 150W NI780H RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶体管极性: 频率:1800 MHz to 2000 MHz 增益:27 dB 输出功率:100 W 汲极/源极击穿电压: 漏极连续电流: 闸/源击穿电压: 最大工作温度: 封装 / 箱体:NI-780-4 封装:Tray |
| MRF5S9150HSR3 | 功能描述:射频MOSFET电源晶体管 HV5 900MHZ 150W NI780HS RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶体管极性: 频率:1800 MHz to 2000 MHz 增益:27 dB 输出功率:100 W 汲极/源极击穿电压: 漏极连续电流: 闸/源击穿电压: 最大工作温度: 封装 / 箱体:NI-780-4 封装:Tray |
| MRF5S9150HSR5 | 功能描述:射频MOSFET电源晶体管 HV5 900MHZ 150W NI780HS RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶体管极性: 频率:1800 MHz to 2000 MHz 增益:27 dB 输出功率:100 W 汲极/源极击穿电压: 漏极连续电流: 闸/源击穿电压: 最大工作温度: 封装 / 箱体:NI-780-4 封装:Tray |
| MRF6.3 | 制造商:Ferraz Shawmut 功能描述: |
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