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| 型号： | MRF5S9150HR3 |
| 厂商： | FREESCALE SEMICONDUCTOR INC |
| 元件分类： | 功率晶体管 |
| 英文描述： | UHF BAND, Si, N-CHANNEL, RF POWER, MOSFET |
| 封装： | ROHS COMPLIANT, NI-780, CASE 465-06, 2 PIN |
| 文件页数： | 11/12页 |
| 文件大小： | 462K |
| 代理商： | MRF5S9150HR3 |
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INFORMA
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8
RF Device Data
Freescale Semiconductor
MRF5S9150HR3
N-CDMA TEST SIGNAL
10
0.0001
100
0
PEAK-T O-A VERAGE (dB)
Figure 14. Single-Carrier CCDF N-CDMA
10
1
0.1
0.01
0.001
24
6
8
IS-95 CDMA (Pilot, Sync, Paging, Traffic Codes 8
Through 13) 1.2288 MHz Channel Bandwidth
Carriers. ACPR Measured in 30 kHz Bandwidth @
±750 kHz Offset. ALT1 Measured in 30 kHz
Bandwidth @
±1.98 MHz Offset. PAR = 9.8 dB @
0.01% Probability on CCDF.
PROBABILITY
(%)
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-60
-1 10
-10
(dB)
-20
-30
-40
-50
-70
-80
-90
-100
+ACPR in 30 kHz
Integrated BW
1.2288 MHz
Channel BW
2.9
0.7
2.2
1.5
0
-0.7
-1.5
-2.2
-2.9
-3.6
3.6
f, FREQUENCY (MHz)
Figure 15. Single-Carrier N-CDMA Spectrum
-AL T1 in 30 kHz
Integrated BW
+ALT1 in 30 kHz
Integrated BW
-ACPR in 30 kHz
Integrated BW
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相关代理商/技术参数 |
参数描述 |
|---|---|
| MRF5S9150HR3_09 | 制造商:FREESCALE 制造商全称:Freescale Semiconductor, Inc 功能描述:RF Power Field Effect Transistor |
| MRF5S9150HR5 | 功能描述:射频MOSFET电源晶体管 HV5 900MHZ 150W NI780H RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶体管极性: 频率:1800 MHz to 2000 MHz 增益:27 dB 输出功率:100 W 汲极/源极击穿电压: 漏极连续电流: 闸/源击穿电压: 最大工作温度: 封装 / 箱体:NI-780-4 封装:Tray |
| MRF5S9150HSR3 | 功能描述:射频MOSFET电源晶体管 HV5 900MHZ 150W NI780HS RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶体管极性: 频率:1800 MHz to 2000 MHz 增益:27 dB 输出功率:100 W 汲极/源极击穿电压: 漏极连续电流: 闸/源击穿电压: 最大工作温度: 封装 / 箱体:NI-780-4 封装:Tray |
| MRF5S9150HSR5 | 功能描述:射频MOSFET电源晶体管 HV5 900MHZ 150W NI780HS RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶体管极性: 频率:1800 MHz to 2000 MHz 增益:27 dB 输出功率:100 W 汲极/源极击穿电压: 漏极连续电流: 闸/源击穿电压: 最大工作温度: 封装 / 箱体:NI-780-4 封装:Tray |
| MRF6.3 | 制造商:Ferraz Shawmut 功能描述: |
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