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参数资料
| 型号： | 2SK1933 |
| 元件分类： | JFETs |
| 英文描述： | 10 A, 900 V, 1.2 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 封装： | TO-3P, 3 PIN |
| 文件页数： | 9/12页 |
| 文件大小： | 63K |
| 代理商： | 2SK1933 |
2SK1933
4
150
0
100
50
150
Power vs. Temperature Derating
Channel
Dissipation
Pch
(W)
Case Temperature Tc (°C)
100
50
3
1
0.1
1
30
100
Drain to Source Voltage V
(V)
DS
Drain
Current
I
(A)
D
Maximum Safe Operation Area
10
0.3
0.05
3
10
300 1000
10
s
1 ms
DC
Operation
(Tc
=
25°C)
100
s
PW
=
10
ms
(1
Shot)
Operation
in
this
area
is
limited
by
R
(on)
DS
30
10
8
6
4
2
0
10
2030
4050
Drain to Source Voltage V
(V)
DS
Drain
Current
I
(A)
D
Typical Output Characteristics
10 V
Pulse Test
6 V
4 V
V
= 3.5 V
GS
5 V
10
8
6
4
2
02
4
6
8
10
Gate to Source Voltage V
(V)
GS
Drain
Current
I
(A)
D
Typical Transfer Characteristics
Pulse Test
Tc = 25°C
–25°C
75°C
V
= 20 V
DS
相关PDF资料 |
PDF描述 |
|---|---|
| 2SK1947 | 50 A, 250 V, 0.06 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 2SK2529 | 50 A, 60 V, 0.016 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB |
| 2SK2553STL-E | 50 A, 60 V, 0.016 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 2SK2664 | 3 A, 900 V, 4.7 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB |
| 2SK2666 | 3 A, 900 V, 4.7 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB |
相关代理商/技术参数 |
参数描述 |
|---|---|
| 2SK1933(E) | 制造商:Renesas Electronics 功能描述:Cut Tape |
| 2SK1934(E) | 制造商:Renesas Electronics Corporation 功能描述: |
| 2SK1934-E | 制造商:Renesas Electronics Corporation 功能描述: |
| 2SK1938 | 制造商:Panasonic Industrial Company 功能描述:TRANSISTOR |
| 2SK1938-01RSC | 制造商:Fuji Electric 功能描述: |
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