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参数资料
| 型号： | 2SK1933 |
| 元件分类： | JFETs |
| 英文描述： | 10 A, 900 V, 1.2 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 封装： | TO-3P, 3 PIN |
| 文件页数： | 11/12页 |
| 文件大小： | 63K |
| 代理商： | 2SK1933 |
2SK1933
6
Body to Drain Diode Reverse
Recovery Time
Reverse Drain Current I
(A)
DR
Reverse
Recovery
Time
t
(ns)
rr
0.1
0.2
0.5
1
2
5
10
50
100
200
500
1000
2000
5000
di/dt = 100 A/ s, V
= 0
Ta = 25°C
GS
Typical Capacitance
vs. Drain to Source Voltage
10000
1000
100
10
010
20
30
40
50
Drain to Source Voltage V
(V)
DS
Capacitance
C
(pF)
Ciss
Coss
Crss
V
= 0
f = 1 MHz
GS
Dynamic Input Characteristics
1000
800
600
400
200
40
80
120
160
200
20
16
12
8
4
0
Gate Charge Qg (nc)
Drain
to
Source
Voltage
V
(V)
DS
V
= 250 V
400 V
600 V
DD
V
I = 8 A
DS
D
Gate
to
Source
Voltage
V
(V)
GS
VGS
0
V
= 250 V
400 V
600 V
DD
Switching Characteristics
Drain Current I
(A)
D
0.2
0.5
1
2
5
10
20
5
10
20
50
100
200
500
Switching
Time
t
(ns)
t
t (on)
t
t (off)
V
= 10 V, V
= 30 V
PW = 5 s, duty
1%
GS
DD
:
<
=
d
f
r
d
相关PDF资料 |
PDF描述 |
|---|---|
| 2SK1947 | 50 A, 250 V, 0.06 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 2SK2529 | 50 A, 60 V, 0.016 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB |
| 2SK2553STL-E | 50 A, 60 V, 0.016 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 2SK2664 | 3 A, 900 V, 4.7 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB |
| 2SK2666 | 3 A, 900 V, 4.7 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB |
相关代理商/技术参数 |
参数描述 |
|---|---|
| 2SK1933(E) | 制造商:Renesas Electronics 功能描述:Cut Tape |
| 2SK1934(E) | 制造商:Renesas Electronics Corporation 功能描述: |
| 2SK1934-E | 制造商:Renesas Electronics Corporation 功能描述: |
| 2SK1938 | 制造商:Panasonic Industrial Company 功能描述:TRANSISTOR |
| 2SK1938-01RSC | 制造商:Fuji Electric 功能描述: |
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