参数资料
型号: 2SK1933
元件分类: JFETs
英文描述: 10 A, 900 V, 1.2 ohm, N-CHANNEL, Si, POWER, MOSFET
封装: TO-3P, 3 PIN
文件页数: 12/12页
文件大小: 63K
代理商: 2SK1933
2SK1933
7
0
Reverse Drain Current vs.
Source to Drain Voltage
10
8
6
4
2
0.2
0.4
0.6
0.8
1.0
Source to Drain Voltage V
(V)
SD
Reverse
Drain
Current
I
(A)
DR
Pulse Test
0, –5 V
V
= 10 V
GS
3
Pulse Width PW (s)
Normalized
Transient
Thermal
Impedance
γ S
(t)
1.0
0.1
0.3
10
0.03
0.01
100
10 m
100 m
1
10
1 m
Normalized Transient Thermal Impedance vs. Pulse Width
PW
PDM
D =
T
PW
θch–c (t) = γ
S (t) θch–c
θch–c = 0.83°C/W, T
C = 25°C
T
TC = 25°C
D = 1
0.5
0.2
0.1
0.05
0.02
0.01
1 Shot
Pulse
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相关代理商/技术参数
参数描述
2SK1933(E) 制造商:Renesas Electronics 功能描述:Cut Tape
2SK1934(E) 制造商:Renesas Electronics Corporation 功能描述:
2SK1934-E 制造商:Renesas Electronics Corporation 功能描述:
2SK1938 制造商:Panasonic Industrial Company 功能描述:TRANSISTOR
2SK1938-01RSC 制造商:Fuji Electric 功能描述: