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参数资料
| 型号： | 2SK1933 |
| 元件分类： | JFETs |
| 英文描述： | 10 A, 900 V, 1.2 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 封装： | TO-3P, 3 PIN |
| 文件页数： | 8/12页 |
| 文件大小： | 63K |
| 代理商： | 2SK1933 |
2SK1933
3
Electrical Characteristics (Ta = 25°C)
Item
Symbol
Min
Typ
Max
Unit
Test conditions
Drain to source breakdown
voltage
V
(BR)DSS
900
—
V
I
D = 10 mA, VGS = 0
Gate to source breakdown
voltage
V
(BR)GSS
±30
—
V
I
G = ±100 A, VDS = 0
Gate to source leak current
I
GSS
—
±10
A
V
GS = ±25 V, VDS = 0
Zero gate voltage drain current I
DSS
—
250
A
V
DS = 720 V, VGS = 0
Gate to source cutoff voltage
V
GS(off)
2.0
—
3.0
V
I
D = 1 mA, VDS = 10 V
Static drain to source on state
resistance
R
DS(on)
—
0.9
1.2
I
D = 5 A
V
GS = 10 V*
1
Forward transfer admittance
|y
fs|
4.5
7
—
S
I
D = 5 A
V
DS = 20 V*
1
Input capacitance
Ciss
—
2620
—
pF
V
DS = 10 V
Output capacitance
Coss
—
830
—
pF
V
GS = 0
Reverse transfer capacitance
Crss
—
320
—
pF
f = 1 MHz
Turn-on delay time
t
d(on)
—
30
—
ns
I
D = 5 A
Rise time
t
r
—
140
—
ns
V
GS = 10 V
Turn-off delay time
t
d(off)
—
285
—
ns
R
L = 6
Fall time
t
f
—
170
—
ns
Body to drain diode forward
voltage
V
DF
—
0.9
—
V
I
F = 10 A, VGS = 0
Body tp drain diode reverse
recovery time
t
rr
—
1600
—
ns
I
F = 10 A, VGS = 0,
di
F / dt = 100 A / s
Note
1. Pulse Test
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PDF描述 |
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| 2SK2553STL-E | 50 A, 60 V, 0.016 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 2SK2664 | 3 A, 900 V, 4.7 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB |
| 2SK2666 | 3 A, 900 V, 4.7 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB |
相关代理商/技术参数 |
参数描述 |
|---|---|
| 2SK1933(E) | 制造商:Renesas Electronics 功能描述:Cut Tape |
| 2SK1934(E) | 制造商:Renesas Electronics Corporation 功能描述: |
| 2SK1934-E | 制造商:Renesas Electronics Corporation 功能描述: |
| 2SK1938 | 制造商:Panasonic Industrial Company 功能描述:TRANSISTOR |
| 2SK1938-01RSC | 制造商:Fuji Electric 功能描述: |
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