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参数资料
| 型号： | 2SK1933 |
| 元件分类： | JFETs |
| 英文描述： | 10 A, 900 V, 1.2 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 封装： | TO-3P, 3 PIN |
| 文件页数： | 10/12页 |
| 文件大小： | 63K |
| 代理商： | 2SK1933 |
2SK1933
5
1.0
0.8
0.6
0.4
0.2
04
8
12
16
Gate to Source Voltage V
(V)
GS
Drain
to
Source
Saturation
Voltage
V
(on)
(V)
DS
Drain to Source Saturation Voltage
vs. Gate to Source Voltage
Pulse Test
2 A
I = 1 A
D
20
5 A
0.1
0.5
5
Drain Current I
(A)
D
Static
Drain
to
Source
on
State
Resistance
R
(on)
(
)
DS
Static Drain to Source on State
Resistance vs. Drain Current
0.2
0.5
1
2
5
10
1
2
10
20
50
V
= 10 V
GS
Pulse Test
2.5
2
1.5
1
0.5
0
–40
0
40
80
120
Case Temperature Tc (°C)
Static
Drain
to
Source
on
State
Resestance
R
(on)
(
)
DS
Static Drain to Source on State
Resistance vs. Temperature
Pulse Test
160
I = 5 A
V
= 10 V
GS
D
2 A
1 A
Forward Transfer Admittance
vs. Drain Current
50
20
10
5
2
1
0.5
0.1
0.2
0.5
1
5
10
2
Drain Current I
(A)
D
Forward
Transfer
Admittance
|y
|
(S)
fs
Tc = 25°C
–25°C
75°C
Pulse Test
V
= 20 V
DS
相关PDF资料 |
PDF描述 |
|---|---|
| 2SK1947 | 50 A, 250 V, 0.06 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 2SK2529 | 50 A, 60 V, 0.016 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB |
| 2SK2553STL-E | 50 A, 60 V, 0.016 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 2SK2664 | 3 A, 900 V, 4.7 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB |
| 2SK2666 | 3 A, 900 V, 4.7 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB |
相关代理商/技术参数 |
参数描述 |
|---|---|
| 2SK1933(E) | 制造商:Renesas Electronics 功能描述:Cut Tape |
| 2SK1934(E) | 制造商:Renesas Electronics Corporation 功能描述: |
| 2SK1934-E | 制造商:Renesas Electronics Corporation 功能描述: |
| 2SK1938 | 制造商:Panasonic Industrial Company 功能描述:TRANSISTOR |
| 2SK1938-01RSC | 制造商:Fuji Electric 功能描述: |
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