参数资料
型号: 25AA1024T-I/MF
厂商: Microchip Technology
文件页数: 18/34页
文件大小: 0K
描述: IC EEPROM 1MBIT 20MHZ 8DFN
标准包装: 3,300
格式 - 存储器: EEPROMs - 串行
存储器类型: EEPROM
存储容量: 1M (128K x 8)
速度: 20MHz
接口: SPI 3 线串行
电源电压: 1.8 V ~ 5.5 V
工作温度: -40°C ~ 85°C
封装/外壳: 8-VDFN 裸露焊盘
供应商设备封装: 8-DFN-S(6x5)
包装: 带卷 (TR)
其它名称: 25AA1024T-I/MFTR
25AA1024
2.11
DEEP POWER-DOWN MODE
Deep Power-Down mode of the 25AA1024 is its
lowest power consumption state. The device will not
respond to any of the Read or Write commands while
in Deep Power-Down mode, and therefore it can be
used as an additional software write protection feature.
The Deep Power-Down mode is entered by driving CS
low, followed by the instruction code (Figure 2-11) onto
the SI line, followed by driving CS high.
If the CS pin is not driven high after the eighth bit of the
instruction code has been given, the device will not
execute Deep power-down. Once the CS line is driven
high, there is a delay (T DP ) before the current settles
to its lowest consumption.
All instructions given during Deep Power-Down mode
are ignored except the Read Electronic Signature
Command (RDID). The RDID command will release
the device from Deep power-down and outputs the
electronic signature on the SO pin, and then returns
the device to Standby mode after delay (T REL )
Deep Power-Down mode automatically releases at
device power-down. Once power is restored to the
device, it will power-up in the Standby mode.
FIGURE 2-11:
DEEP POWER-DOWN SEQUENCE
CS
0
1
2
3
4
5
6
7
SCK
SI
1
0
1
1
1
0
0
1
High-Impedance
SO
DS21836H-page 18
? 2010 Microchip Technology Inc.
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