参数资料
型号: 25AA1024T-I/MF
厂商: Microchip Technology
文件页数: 16/34页
文件大小: 0K
描述: IC EEPROM 1MBIT 20MHZ 8DFN
标准包装: 3,300
格式 - 存储器: EEPROMs - 串行
存储器类型: EEPROM
存储容量: 1M (128K x 8)
速度: 20MHz
接口: SPI 3 线串行
电源电压: 1.8 V ~ 5.5 V
工作温度: -40°C ~ 85°C
封装/外壳: 8-VDFN 裸露焊盘
供应商设备封装: 8-DFN-S(6x5)
包装: 带卷 (TR)
其它名称: 25AA1024T-I/MFTR
25AA1024
2.9
SECTOR ERASE
The Sector Erase function will erase all bits (FFh)
inside the given sector. A Write Enable ( WREN ) instruc-
tion must be given prior to attempting a Sector Erase.
This is done by setting CS low and then clocking out
the proper instruction into the 25AA1024. After all
eight bits of the instruction are transmitted, the CS
must be brought high to set the write enable latch.
The Sector Erase function is entered by driving CS
low, followed by the instruction code (Figure 2-9), and
three address bytes. Any address inside the sector to
be erased is a valid address.
CS must then be driven high after the last bit if the
address or the Sector Erase will not execute. Once the
CS is driven high, the self-timed Sector Erase cycle is
started. The WIP bit in the STATUS register can be
read to determine when the Sector Erase cycle is
complete.
If a SECTOR ERASE instruction is given to an address
that has been protected by the Block Protect bits (BP0,
BP1) then the sequence will be aborted and no erase
will occur.
See Table 2-3 for Sector Addressing.
FIGURE 2-9:
CS
SECTOR ERASE SEQUENCE
0
1
2
3
4
5
6
7
8
9 1 0 11
2 9 3 0 3 1
SCK
Instruction
24-bit Address
SI
1
1
0
1
1
0
0
0 23 22 21 20
2
1
0
High-Impedance
SO
DS21836H-page 16
? 2010 Microchip Technology Inc.
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