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| 型号： | 25AA1024T-I/MF |
| 厂商： | Microchip Technology |
| 文件页数： | 17/34页 |
| 文件大小： | 0K |
| 描述： | IC EEPROM 1MBIT 20MHZ 8DFN |
| 标准包装： | 3,300 |
| 格式 - 存储器： | EEPROMs - 串行 |
| 存储器类型： | EEPROM |
| 存储容量： | 1M (128K x 8) |
| 速度： | 20MHz |
| 接口： | SPI 3 线串行 |
| 电源电压： | 1.8 V ~ 5.5 V |
| 工作温度： | -40°C ~ 85°C |
| 封装/外壳： | 8-VDFN 裸露焊盘 |
| 供应商设备封装： | 8-DFN-S（6x5） |
| 包装： | 带卷 (TR) |
| 其它名称： | 25AA1024T-I/MFTR |
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25AA1024
2.10
CHIP ERASE
The Chip Erase function will erase all bits (FFh) in the
array. A Write Enable ( WREN ) instruction must be given
prior to executing a Chip Erase. This is done by setting
CS low and then clocking out the proper instruction
into the 25AA1024. After all eight bits of the instruction
are transmitted, the CS must be brought high to set
the write enable latch.
The Chip Erase function is entered by driving the CS
low, followed by the instruction code (Figure 2-10)
onto the SI line.
The CS pin must be driven high after the eighth bit of
the instruction code has been given or the Chip Erase
function will not be executed. Once the CS pin is
driven high, the self-timed Chip Erase function begins.
While the device is executing the Chip Erase function
the WIP bit in the STATUS register can be read to
determine when the Chip Erase function is complete.
The Chip Erase function is ignored if either of the
Block Protect bits (BP0, BP1) are not 0, meaning ?,
?, or all of the array is protected.
FIGURE 2-10:
CHIP ERASE SEQUENCE
CS
0
1
2
3
4
5
6
7
SCK
SI
1
1
0
0
0
1
1
1
High-Impedance
SO
? 2010 Microchip Technology Inc.
DS21836H-page 17
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相关代理商/技术参数 |
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|---|---|
| 25AA128 | 制造商:MICROCHIP 制造商全称:Microchip Technology 功能描述:128K SPI Bus Serial EEPROM |
| 25AA128_09 | 制造商:MICROCHIP 制造商全称:Microchip Technology 功能描述:128K SPI Bus Serial EEPROM |
| 25AA128-E/MF | 制造商:MICROCHIP 制造商全称:Microchip Technology 功能描述:128K SPI Bus Serial EEPROM |
| 25AA128-E/P | 制造商:MICROCHIP 制造商全称:Microchip Technology 功能描述:128K SPI Bus Serial EEPROM |
| 25AA128-E/SN | 制造商:MICROCHIP 制造商全称:Microchip Technology 功能描述:128K SPI Bus Serial EEPROM |
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