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参数资料
| 型号： | MRF6P3300HR3 |
| 厂商： | FREESCALE SEMICONDUCTOR INC |
| 元件分类： | 功率晶体管 |
| 英文描述： | UHF BAND, Si, N-CHANNEL, RF POWER, MOSFET |
| 封装： | ROHS COMPLIANT, NI-860C3, CASE 375G-04, 4 PIN |
| 文件页数： | 8/24页 |
| 文件大小： | 993K |
| 代理商： | MRF6P3300HR3 |
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RF Device Data
Freescale Semiconductor
MRF6P3300HR3 MRF6P3300HR5
TYPICAL DVB-T OFDM BROADBAND CHARACTERISTICS
ACPR,
ADJACENT
CHANNEL
POWER
RA
TIO
(dBc)
Figure 37. Single-Carrier OFDM Broadband
Performance @ 60 Watts Avg.
18
-58
f, FREQUENCY (MHz)
30
-52
24
20
-53
-54
-57
400
-56
η
D
,DRAIN
EFFICIENCY
(%),
G
ps
,POWER
GAIN
(dB)
Gps
ACPR
28
900
26
22
-55
ηD
500
600
700
800
Figure 38. Single-Carrier DVB-T OFDM Power
Gain versus Output Power
18
24
3
f = 560 MHz
Pout, OUTPUT POWER (WATTS) AVG.
23
21
20
100
200
G
ps
,POWER
GAIN
(dB) 22
19
10
660 MHz
VDD = 32 Vdc, IDQ = 1600 mA
8K Mode OFDM, 64 QAM Data Carrier
Modulation, 5 Symbols
760 MHz
860 MHz
η
D,
DRAIN
EFFICIENCY
(%)
Figure 39. Single-Carrier DVB-T OFDM Drain
Efficiency versus Output Power
5
45
3
Pout, OUTPUT POWER (WATTS) AVG.
40
30
25
100
200
35
20
10
VDD = 32 Vdc, IDQ = 1600 mA
8K Mode OFDM, 64 QAM Data Carrier
Modulation, 5 Symbols
15
10
f = 660 MHz
560 MHz
760 MHz
860 MHz
ACPR,
ADJACENT
CHANNEL
POWER
RA
TIO
(dBc)
Figure 40. Single-Carrier DVB-T OFDM ACPR
versus Output Power
-65
-45
3
Pout, OUTPUT POWER (WATTS) AVG.
-50
100
200
-55
10
VDD = 32 Vdc, IDQ = 1600 mA
8K Mode OFDM, 64 QAM Data Carrier
Modulation, 5 Symbols
-60
f = 860 MHz
560 MHz
760 MHz
660 MHz
VDD = 32 Vdc, Pout = 60 W (Avg.)
IDQ = 1600 mA, 8K Mode OFDM
64 QAM Data Carrier Modulation, 5 Symbols
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相关代理商/技术参数 |
参数描述 |
|---|---|
| MRF6P3300HR3_06 | 制造商:FREESCALE 制造商全称:Freescale Semiconductor, Inc 功能描述:RF Power Field Effect Transistor |
| MRF6P3300HR5 | 功能描述:MOSFET RF N-CH 32V 300W NI-860C3 RoHS:是 类别:分离式半导体产品 >> RF FET 系列:- 产品目录绘图:MOSFET SOT-23-3 Pkg 标准包装:3,000 系列:- 晶体管类型:N 通道 JFET 频率:- 增益:- 电压 - 测试:- 额定电流:30mA 噪音数据:- 电流 - 测试:- 功率 - 输出:- 电压 - 额定:25V 封装/外壳:TO-236-3，SC-59，SOT-23-3 供应商设备封装:SOT-23-3（TO-236） 包装:带卷 (TR) 产品目录页面:1558 (CN2011-ZH PDF) 其它名称:MMBFJ309LT1GOSMMBFJ309LT1GOS-NDMMBFJ309LT1GOSTR |
| MRF6P9220HR3 | 功能描述:MOSFET RF N-CH 28V 47W NI-860C3 RoHS:是 类别:分离式半导体产品 >> RF FET 系列:- 产品目录绘图:MOSFET SOT-23-3 Pkg 标准包装:3,000 系列:- 晶体管类型:N 通道 JFET 频率:- 增益:- 电压 - 测试:- 额定电流:30mA 噪音数据:- 电流 - 测试:- 功率 - 输出:- 电压 - 额定:25V 封装/外壳:TO-236-3，SC-59，SOT-23-3 供应商设备封装:SOT-23-3（TO-236） 包装:带卷 (TR) 产品目录页面:1558 (CN2011-ZH PDF) 其它名称:MMBFJ309LT1GOSMMBFJ309LT1GOS-NDMMBFJ309LT1GOSTR |
| MRF6P9220HR3_06 | 制造商:FREESCALE 制造商全称:Freescale Semiconductor, Inc 功能描述:RF Power Field Effect Transistor N-Channel Enhancement-Mode Lateral MOSFET |
| MRF6P9220HR3_08 | 制造商:FREESCALE 制造商全称:Freescale Semiconductor, Inc 功能描述:RF Power Field Effect Transistor N-Channel Enhancement-Mode Lateral MOSFET |
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