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参数资料
| 型号： | MRF6P3300HR3 |
| 厂商： | FREESCALE SEMICONDUCTOR INC |
| 元件分类： | 功率晶体管 |
| 英文描述： | UHF BAND, Si, N-CHANNEL, RF POWER, MOSFET |
| 封装： | ROHS COMPLIANT, NI-860C3, CASE 375G-04, 4 PIN |
| 文件页数： | 10/24页 |
| 文件大小： | 993K |
| 代理商： | MRF6P3300HR3 |
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RF Device Data
Freescale Semiconductor
MRF6P3300HR3 MRF6P3300HR5
TYPICAL CW BROADBAND CHARACTERISTICS
Figure 43. Pulsed CW Output Power versus
Input Power @ 470 MHz
33
57
29
Pin, INPUT POWER (dBm)
VDD = 32 Vdc, IDQ = 1600 mA
Pulsed CW, 8
μsec(on), 1 msec(off)
f = 470 MHz
51
30
31
32
Actual
Ideal
56.5
28
P
out
,OUTPUT
POWER
(dBm)
55
54
53
52
28.5
P1dB = 53.59 dBm
(228.67 W)
56
55.5
54.5
53.5
52.5
51.5
29.5
30.5
31.5
32.5
Figure 44. Pulsed CW Output Power versus
Input Power @ 560 MHz
36
59
30
Pin, INPUT POWER (dBm)
VDD = 32 Vdc, IDQ = 1600 mA
Pulsed CW, 8
μsec(on), 1 msec(off)
f = 560 MHz
53
31
32
34
Actual
Ideal
29
P
out
,OUTPUT
POWER
(dBm)
58
57
55
54
P1dB = 54.84 dBm
(304.81 W)
33
35
56
P3dB = 55.49 dBm
(353.76 W)
Figure 45. Pulsed CW Output Power versus
Input Power @ 660 MHz
38
60
Pin, INPUT POWER (dBm)
VDD = 32 Vdc, IDQ = 1600 mA
Pulsed CW, 8
μsec(on), 1 msec(off)
f = 660 MHz
51
31
32
34
Actual
Ideal
30
P
out
,OUTPUT
POWER
(dBm)
58
57
55
54
P1dB = 54.04 dBm
(253.67 W)
33
35
56
P3dB = 54.88 dBm
(307.45 W)
59
53
52
36
37
Figure 46. Pulsed CW Output Power versus
Input Power @ 760 MHz
39
60
Pin, INPUT POWER (dBm)
VDD = 32 Vdc, IDQ = 1600 mA
Pulsed CW, 8
μsec(on), 1 msec(off)
f = 760 MHz
51
32
33
35
Actual
Ideal
31
P
out
,OUTPUT
POWER
(dBm)
58
57
55
54
P1dB = 54.56 dBm
(286.06 W)
34
36
56
P3dB = 55.25 dBm
(334.73 W)
59
53
52
37
38
Figure 47. Pulsed CW Output Power versus
Input Power @ 860 MHz
40
60
Pin, INPUT POWER (dBm)
VDD = 32 Vdc, IDQ = 1600 mA
Pulsed CW, 8
μsec(on), 1 msec(off)
f = 860 MHz
52
33
34
36
Actual
Ideal
32
P
out
,OUTPUT
POWER
(dBm)
58
57
55
54
P1dB = 54.82 dBm
(303.25 W)
35
37
56
P3dB = 55.58 dBm
(361.21 W)
59
53
38
39
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相关代理商/技术参数 |
参数描述 |
|---|---|
| MRF6P3300HR3_06 | 制造商:FREESCALE 制造商全称:Freescale Semiconductor, Inc 功能描述:RF Power Field Effect Transistor |
| MRF6P3300HR5 | 功能描述:MOSFET RF N-CH 32V 300W NI-860C3 RoHS:是 类别:分离式半导体产品 >> RF FET 系列:- 产品目录绘图:MOSFET SOT-23-3 Pkg 标准包装:3,000 系列:- 晶体管类型:N 通道 JFET 频率:- 增益:- 电压 - 测试:- 额定电流:30mA 噪音数据:- 电流 - 测试:- 功率 - 输出:- 电压 - 额定:25V 封装/外壳:TO-236-3，SC-59，SOT-23-3 供应商设备封装:SOT-23-3（TO-236） 包装:带卷 (TR) 产品目录页面:1558 (CN2011-ZH PDF) 其它名称:MMBFJ309LT1GOSMMBFJ309LT1GOS-NDMMBFJ309LT1GOSTR |
| MRF6P9220HR3 | 功能描述:MOSFET RF N-CH 28V 47W NI-860C3 RoHS:是 类别:分离式半导体产品 >> RF FET 系列:- 产品目录绘图:MOSFET SOT-23-3 Pkg 标准包装:3,000 系列:- 晶体管类型:N 通道 JFET 频率:- 增益:- 电压 - 测试:- 额定电流:30mA 噪音数据:- 电流 - 测试:- 功率 - 输出:- 电压 - 额定:25V 封装/外壳:TO-236-3，SC-59，SOT-23-3 供应商设备封装:SOT-23-3（TO-236） 包装:带卷 (TR) 产品目录页面:1558 (CN2011-ZH PDF) 其它名称:MMBFJ309LT1GOSMMBFJ309LT1GOS-NDMMBFJ309LT1GOSTR |
| MRF6P9220HR3_06 | 制造商:FREESCALE 制造商全称:Freescale Semiconductor, Inc 功能描述:RF Power Field Effect Transistor N-Channel Enhancement-Mode Lateral MOSFET |
| MRF6P9220HR3_08 | 制造商:FREESCALE 制造商全称:Freescale Semiconductor, Inc 功能描述:RF Power Field Effect Transistor N-Channel Enhancement-Mode Lateral MOSFET |
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