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参数资料
| 型号： | MRF6P3300HR3 |
| 厂商： | FREESCALE SEMICONDUCTOR INC |
| 元件分类： | 功率晶体管 |
| 英文描述： | UHF BAND, Si, N-CHANNEL, RF POWER, MOSFET |
| 封装： | ROHS COMPLIANT, NI-860C3, CASE 375G-04, 4 PIN |
| 文件页数： | 5/24页 |
| 文件大小： | 993K |
| 代理商： | MRF6P3300HR3 |
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MRF6P3300HR3 MRF6P3300HR5
13
RF Device Data
Freescale Semiconductor
TYPICAL TWO-TONE BROADBAND CHARACTERISTICS
Figure 22. Two-T one Power Gain versus
Output Power @ 473 MHz
21
24.5
5
IDQ = 2400 mA
2000 mA
Pout, OUTPUT POWER (WATTS) PEP
24
23
22
100
400
G
ps
,POWER
GAIN
(dB)
1600 mA
23.5
22.5
21.5
10
1200 mA
800 mA
Figure 23. Two-T one Power Gain versus
Output Power @ 560 MHz
20
23.5
5
IDQ = 2400 mA
2000 mA
Pout, OUTPUT POWER (WATTS) PEP
23
22
21
100
400
G
ps
,POWER
GAIN
(dB)
1600 mA
22.5
21.5
20.5
10
1200 mA
800 mA
Figure 24. Two-T one Power Gain versus
Output Power @ 660 MHz
18.5
21
5
IDQ = 2400 mA
2000 mA
Pout, OUTPUT POWER (WATTS) PEP
20.5
19
100
400
G
ps
,POWER
GAIN
(dB)
1600 mA
20
19.5
10
1200 mA
800 mA
Figure 25. Two-T one Power Gain versus
Output Power @ 760 MHz
16.5
19
5
IDQ = 2400 mA
2000 mA
Pout, OUTPUT POWER (WATTS) PEP
18.5
17
100
400
G
ps
,POWER
GAIN
(dB)
1600 mA
18
17.5
10
1200 mA
800 mA
VDD = 32 Vdc
f1 = 757 MHz, f2 = 763 MHz
Two-Tone Measurements
6 MHz Tone Spacing
VDD = 32 Vdc, f1 = 657 MHz, f2 = 663 MHz
Two-Tone Measurements, 6 MHz Tone Spacing
Figure 26. Two-T one Power Gain versus
Output Power @ 857 MHz
17.5
20
5
IDQ = 2400 mA
2000 mA
Pout, OUTPUT POWER (WATTS) PEP
19.5
18
100
400
G
ps
,POWER
GAIN
(dB)
1600 mA
19
18.5
10
1200 mA
800 mA
VDD = 32 Vdc, f1 = 854 MHz, f2 = 860 MHz
Two-Tone Measurements, 6 MHz Tone Spacing
VDD = 32 Vdc, f1 = 470 MHz, f2 = 476 MHz
Two-Tone Measurements, 6 MHz Tone Spacing
VDD = 32 Vdc, f1 = 557 MHz, f2 = 563 MHz
Two-Tone Measurements, 6 MHz Tone Spacing
相关PDF资料 |
PDF描述 |
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| MRF6P9220HR3 | 2 CHANNEL, UHF BAND, Si, N-CHANNEL, RF POWER, MOSFET |
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| MRF6S18060MBR1 | L BAND, Si, N-CHANNEL, RF POWER, MOSFET, TO-272 |
| MRF6S18060NBR1 | L BAND, Si, N-CHANNEL, RF POWER, MOSFET, TO-272 |
| MRF6S18060NR1 | L BAND, Si, N-CHANNEL, RF POWER, MOSFET, TO-270 |
相关代理商/技术参数 |
参数描述 |
|---|---|
| MRF6P3300HR3_06 | 制造商:FREESCALE 制造商全称:Freescale Semiconductor, Inc 功能描述:RF Power Field Effect Transistor |
| MRF6P3300HR5 | 功能描述:MOSFET RF N-CH 32V 300W NI-860C3 RoHS:是 类别:分离式半导体产品 >> RF FET 系列:- 产品目录绘图:MOSFET SOT-23-3 Pkg 标准包装:3,000 系列:- 晶体管类型:N 通道 JFET 频率:- 增益:- 电压 - 测试:- 额定电流:30mA 噪音数据:- 电流 - 测试:- 功率 - 输出:- 电压 - 额定:25V 封装/外壳:TO-236-3，SC-59，SOT-23-3 供应商设备封装:SOT-23-3（TO-236） 包装:带卷 (TR) 产品目录页面:1558 (CN2011-ZH PDF) 其它名称:MMBFJ309LT1GOSMMBFJ309LT1GOS-NDMMBFJ309LT1GOSTR |
| MRF6P9220HR3 | 功能描述:MOSFET RF N-CH 28V 47W NI-860C3 RoHS:是 类别:分离式半导体产品 >> RF FET 系列:- 产品目录绘图:MOSFET SOT-23-3 Pkg 标准包装:3,000 系列:- 晶体管类型:N 通道 JFET 频率:- 增益:- 电压 - 测试:- 额定电流:30mA 噪音数据:- 电流 - 测试:- 功率 - 输出:- 电压 - 额定:25V 封装/外壳:TO-236-3，SC-59，SOT-23-3 供应商设备封装:SOT-23-3（TO-236） 包装:带卷 (TR) 产品目录页面:1558 (CN2011-ZH PDF) 其它名称:MMBFJ309LT1GOSMMBFJ309LT1GOS-NDMMBFJ309LT1GOSTR |
| MRF6P9220HR3_06 | 制造商:FREESCALE 制造商全称:Freescale Semiconductor, Inc 功能描述:RF Power Field Effect Transistor N-Channel Enhancement-Mode Lateral MOSFET |
| MRF6P9220HR3_08 | 制造商:FREESCALE 制造商全称:Freescale Semiconductor, Inc 功能描述:RF Power Field Effect Transistor N-Channel Enhancement-Mode Lateral MOSFET |
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