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参数资料
| 型号： | MRF6P3300HR3 |
| 厂商： | FREESCALE SEMICONDUCTOR INC |
| 元件分类： | 功率晶体管 |
| 英文描述： | UHF BAND, Si, N-CHANNEL, RF POWER, MOSFET |
| 封装： | ROHS COMPLIANT, NI-860C3, CASE 375G-04, 4 PIN |
| 文件页数： | 11/24页 |
| 文件大小： | 993K |
| 代理商： | MRF6P3300HR3 |
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MRF6P3300HR3 MRF6P3300HR5
19
RF Device Data
Freescale Semiconductor
TYPICAL ATSC 8VSB BROADBAND CHARACTERISTICS
ACPR,
ADJACENT
CHANNEL
POWER
RA
TIO
(dBc)
Figure 48. Single-Carrier ATSC 8VSB
Broadband Performance @ 100 Watts Avg.
15
-33
f, FREQUENCY (MHz)
40
-23
30
20
-24
-25
-32
400
-27
η
D
,DRAIN
EFFICIENCY
(%),
G
ps
,POWER
GAIN
(dB)
Gps
ACPR
VDD = 32 Vdc, Pout = 100 W (Avg.)
IDQ = 1700 mA, ATSC 8VSB
37.5
900
35
25
-26
ηD
500
600
700
800
Figure 49. Single-Carrier ATSC 8VSB Power
Gain versus Output Power
17
24
3
f = 560 MHz
Pout, OUTPUT POWER (WATTS) AVG.
23
21
20
100
200
G
ps
,POWER
GAIN
(dB)
22
19
10
660 MHz
VDD = 32 Vdc, IDQ = 1700 mA
760 MHz
860 MHz
η
D,
DRAIN
EFFICIENCY
(%)
Figure 50. Single-Carrier ATSC 8VSB Drain
Efficiency versus Output Power
0
50
3
Pout, OUTPUT POWER (WATTS) AVG.
40
30
100
200
20
10
VDD = 32 Vdc, IDQ = 1700 mA
ATSC 8VSB
10
f = 660 MHz
560 MHz
760 MHz
860 MHz
ACPR,
ADJACENT
CHANNEL
POWER
RA
TIO
(dBc)
Figure 51. Single-Carrier ATSC 8VSB ACPR
versus Output Power
-40
-15
3
Pout, OUTPUT POWER (WATTS) AVG.
-20
100
200
-25
10
VDD = 32 Vdc, IDQ = 1700 mA
ATSC 8VSB
-35
f = 860 MHz
760 MHz
660 MHz
32.5
27.5
22.5
17.5
-28
-29
-30
-31
470 MHz
18
470 MHz
-30
470 MHz
560 MHz
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相关代理商/技术参数 |
参数描述 |
|---|---|
| MRF6P3300HR3_06 | 制造商:FREESCALE 制造商全称:Freescale Semiconductor, Inc 功能描述:RF Power Field Effect Transistor |
| MRF6P3300HR5 | 功能描述:MOSFET RF N-CH 32V 300W NI-860C3 RoHS:是 类别:分离式半导体产品 >> RF FET 系列:- 产品目录绘图:MOSFET SOT-23-3 Pkg 标准包装:3,000 系列:- 晶体管类型:N 通道 JFET 频率:- 增益:- 电压 - 测试:- 额定电流:30mA 噪音数据:- 电流 - 测试:- 功率 - 输出:- 电压 - 额定:25V 封装/外壳:TO-236-3，SC-59，SOT-23-3 供应商设备封装:SOT-23-3（TO-236） 包装:带卷 (TR) 产品目录页面:1558 (CN2011-ZH PDF) 其它名称:MMBFJ309LT1GOSMMBFJ309LT1GOS-NDMMBFJ309LT1GOSTR |
| MRF6P9220HR3 | 功能描述:MOSFET RF N-CH 28V 47W NI-860C3 RoHS:是 类别:分离式半导体产品 >> RF FET 系列:- 产品目录绘图:MOSFET SOT-23-3 Pkg 标准包装:3,000 系列:- 晶体管类型:N 通道 JFET 频率:- 增益:- 电压 - 测试:- 额定电流:30mA 噪音数据:- 电流 - 测试:- 功率 - 输出:- 电压 - 额定:25V 封装/外壳:TO-236-3，SC-59，SOT-23-3 供应商设备封装:SOT-23-3（TO-236） 包装:带卷 (TR) 产品目录页面:1558 (CN2011-ZH PDF) 其它名称:MMBFJ309LT1GOSMMBFJ309LT1GOS-NDMMBFJ309LT1GOSTR |
| MRF6P9220HR3_06 | 制造商:FREESCALE 制造商全称:Freescale Semiconductor, Inc 功能描述:RF Power Field Effect Transistor N-Channel Enhancement-Mode Lateral MOSFET |
| MRF6P9220HR3_08 | 制造商:FREESCALE 制造商全称:Freescale Semiconductor, Inc 功能描述:RF Power Field Effect Transistor N-Channel Enhancement-Mode Lateral MOSFET |
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