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参数资料
| 型号： | MRF1550FNT1 |
| 厂商： | FREESCALE SEMICONDUCTOR INC |
| 元件分类： | 功率晶体管 |
| 英文描述： | VHF BAND, Si, N-CHANNEL, RF POWER, MOSFET, TO-272BA |
| 封装： | ROHS COMPLIANT, PLASTIC, CASE 1264A-03, 6 PIN |
| 文件页数： | 11/18页 |
| 文件大小： | 461K |
| 代理商： | MRF1550FNT1 |
2
RF Device Data
Freescale Semiconductor
MRF1550NT1 MRF1550FNT1
Table 4. Electrical Characteristics (TA = 25°C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
Off Characteristics
Zero Gate Voltage Drain Current
(VDS = 60 Vdc, VGS = 0 Vdc)
IDSS
—
1
μAdc
Gate-Source Leakage Current
(VGS = 10 Vdc, VDS = 0 Vdc)
IGSS
—
0.5
μAdc
On Characteristics
Gate Threshold Voltage
(VDS = 12.5 Vdc, ID = 800 μA)
VGS(th)
1
—
3
Vdc
Drain-Source On-Voltage
(VGS = 5 Vdc, ID = 1.2 A)
RDS(on)
—
0.5
Ω
Drain-Source On-Voltage
(VGS = 10 Vdc, ID = 4.0 Adc)
VDS(on)
—
1
Vdc
Dynamic Characteristics
Input Capacitance (Includes Input Matching Capacitance)
(VDS = 12.5 Vdc, VGS = 0 V, f = 1 MHz)
Ciss
—
500
pF
Output Capacitance
(VDS = 12.5 Vdc, VGS = 0 V, f = 1 MHz)
Coss
—
250
pF
Reverse Transfer Capacitance
(VDS = 12.5 Vdc, VGS = 0 V, f = 1 MHz)
Crss
—
35
pF
RF Characteristics (In Freescale Test Fixture)
Common-Source Amplifier Power Gain
(VDD = 12.5 Vdc, Pout = 50 Watts, IDQ = 500 mA)
f = 175 MHz
Gps
—
14.5
—
dB
Drain Efficiency
(VDD = 12.5 Vdc, Pout = 50 Watts, IDQ = 500 mA)
f = 175 MHz
η
—
55
—
%
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相关代理商/技术参数 |
参数描述 |
|---|---|
| MRF1550FT1 | 制造商:MOTOROLA 制造商全称:Motorola, Inc 功能描述:RF POWER FIELD EFFECT TRANSISTORS |
| MRF1550N | 制造商:FREESCALE 制造商全称:Freescale Semiconductor, Inc 功能描述:RF Power Field Effect Transistors |
| MRF1550NT1 | 功能描述:射频MOSFET电源晶体管 LDMOS FET HI PWR TO272FN RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶体管极性: 频率:1800 MHz to 2000 MHz 增益:27 dB 输出功率:100 W 汲极/源极击穿电压: 漏极连续电流: 闸/源击穿电压: 最大工作温度: 封装 / 箱体:NI-780-4 封装:Tray |
| MRF1550NT1_08 | 制造商:FREESCALE 制造商全称:Freescale Semiconductor, Inc 功能描述:RF Power Field Effect Transistors |
| MRF1550T | 制造商:MOTOROLA 制造商全称:Motorola, Inc 功能描述:RF POWER FIELD EFFECT TRANSISTORS |
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