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参数资料
| 型号： | MRF1550FT1 |
| 厂商： | FREESCALE SEMICONDUCTOR INC |
| 元件分类： | 功率晶体管 |
| 英文描述： | VHF BAND, Si, N-CHANNEL, RF POWER, MOSFET, TO-272 |
| 封装： | PLASTIC, CASE 1264A-02, TO-272, 6 PIN |
| 文件页数： | 1/12页 |
| 文件大小： | 337K |
| 代理商： | MRF1550FT1 |
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TION
Replaced by MRF1550NT1/FNT1. There are no form, fit or function changes with this
part replacement. N suffix added to part number to indicate transition to lead-free
terminations.
MRF1550T1 MRF1550FT1
1
RF Device Data
Freescale Semiconductor
RF Power Field Effect Transistors
N-Channel Enhancement-Mode Lateral MOSFETs
Designed for broadband commercial and industrial applications with frequen-
cies to 175 MHz. The high gain and broadband performance of these devices
make them ideal for large -signal, common source amplifier applications in
12.5 volt mobile FM equipment.
Specified Performance @ 175 MHz, 12.5 Volts
Output Power — 50 Watts
Power Gain — 12 dB
Efficiency — 50%
Capable of Handling 20:1 VSWR, @ 15.6 Vdc, 175 MHz, 2 dB Overdrive
Excellent Thermal Stability
Characterized with Series Equivalent Large-Signal Impedance Parameters
Broadband -Full Power Across the Band: 135-175 MHz
Broadband Demonstration Amplifier Information Available
Upon Request
200_C Capable Plastic Package
In Tape and Reel. T1 Suffix = 500 Units per 44 mm, 13 inch Reel.
Table 1. Maximum Ratings
Rating
Symbol
Value
Unit
Drain-Source Voltage
VDSS
-0.5, +40
Vdc
Gate-Source Voltage
VGS
±20
Vdc
Drain Current — Continuous
ID
12
Adc
Total Device Dissipation @ TC = 25°C (1)
Derate above 25°C
PD
165
0.50
W
W/°C
Storage Temperature Range
Tstg
- 65 to +150
°C
Operating Junction Temperature
TJ
200
°C
Table 2. Thermal Characteristics
Characteristic
Symbol
Value
Unit
Thermal Resistance, Junction to Case
RθJC
0.75
°C/W
Table 3. Moisture Sensitivity Level
Test Methodology
Rating
Package Peak Temperature
Unit
Per JESD 22-A113, IPC/JEDEC J-STD-020
1
260
°C
1. Calculated based on the formula PD =
NOTE - CAUTION - MOS devices are susceptible to damage from electrostatic charge. Reasonable precautions in handling and
packaging MOS devices should be observed.
Document Number: MRF1550T1
Rev. 9, 5/2006
Freescale Semiconductor
Technical Data
175 MHz, 50 W, 12.5 V
LATERAL N-CHANNEL
BROADBAND
RF POWER MOSFETs
MRF1550T1
MRF1550FT1
CASE 1264-09, STYLE 1
TO-272-6 WRAP
PLASTIC
MRF1550T1
CASE 1264A-02, STYLE 1
TO-272-6
PLASTIC
MRF1550FT1
TJ– TC
RθJC
Freescale Semiconductor, Inc., 2006. All rights reserved.
相关PDF资料 |
PDF描述 |
|---|---|
| MRF1550T1 | VHF BAND, Si, N-CHANNEL, RF POWER, MOSFET, TO-272 |
| MRF1570FNT1 | 2 CHANNEL, UHF BAND, Si, N-CHANNEL, RF POWER, MOSFET |
| MRF1570NT1 | 2 CHANNEL, UHF BAND, Si, N-CHANNEL, RF POWER, MOSFET |
| MRF1570T1 | 2 CHANNEL, UHF BAND, Si, N-CHANNEL, RF POWER, MOSFET, TO-272 |
| MRF1570NT1 | 2 CHANNEL, UHF BAND, Si, N-CHANNEL, RF POWER, MOSFET, TO-272 |
相关代理商/技术参数 |
参数描述 |
|---|---|
| MRF1550N | 制造商:FREESCALE 制造商全称:Freescale Semiconductor, Inc 功能描述:RF Power Field Effect Transistors |
| MRF1550NT1 | 功能描述:射频MOSFET电源晶体管 LDMOS FET HI PWR TO272FN RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶体管极性: 频率:1800 MHz to 2000 MHz 增益:27 dB 输出功率:100 W 汲极/源极击穿电压: 漏极连续电流: 闸/源击穿电压: 最大工作温度: 封装 / 箱体:NI-780-4 封装:Tray |
| MRF1550NT1_08 | 制造商:FREESCALE 制造商全称:Freescale Semiconductor, Inc 功能描述:RF Power Field Effect Transistors |
| MRF1550T | 制造商:MOTOROLA 制造商全称:Motorola, Inc 功能描述:RF POWER FIELD EFFECT TRANSISTORS |
| MRF1550T1 | 制造商:MOTOROLA 制造商全称:Motorola, Inc 功能描述:RF POWER FIELD EFFECT TRANSISTORS |
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