- 您现在的位置：买卖IC网 > PDF目录98036 > MRF1570FNT1 (MOTOROLA INC) 2 CHANNEL, UHF BAND, Si, N-CHANNEL, RF POWER, MOSFET PDF资料下载
参数资料
| 型号： | MRF1570FNT1 |
| 厂商： | MOTOROLA INC |
| 元件分类： | 功率晶体管 |
| 英文描述： | 2 CHANNEL, UHF BAND, Si, N-CHANNEL, RF POWER, MOSFET |
| 封装： | PLASTIC, CASE 1366A-02, TO-272, 8 PIN |
| 文件页数： | 1/20页 |
| 文件大小： | 437K |
| 代理商： | MRF1570FNT1 |
MRF1570T1 MRF1570FT1 MRF1570NT1 MRF1570FNT1
MOTOROLA RF DEVICE DATA
The RF MOSFET Line
RF Power Field Effect Transistors
N-Channel Enhancement-Mode Lateral MOSFETs
Designed for broadband commercial and industrial applications with frequen-
cies up to 470 MHz. The high gain and broadband performance of these
devices make them ideal for large-signal, common source amplifier applica-
tions in 12.5 volt mobile FM equipment.
Specified Performance @ 470 MHz, 12.5 Volts
Output Power — 70 Watts
Power Gain — 10 dB
Efficiency — 50%
Capable of Handling 20:1 VSWR, @ 15.6 Vdc, 470 MHz, 2 dB Overdrive
Excellent Thermal Stability
Characterized with Series Equivalent Large-Signal Impedance Parameters
Broadband -Full Power Across the Band: 135-175 MHz
400-470 MHz
Broadband Demonstration Amplifier Information Available
Upon Request
N Suffix Indicates Lead-Free Terminations
Available in Tape and Reel. T1 Suffix = 500 Units per 44 mm, 13 inch Reel.
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
Drain-Source Voltage
VDSS
40
Vdc
Gate-Source Voltage
VGS
± 20
Vdc
Total Device Dissipation @ TC = 25°C
Derate above 25°C
PD
165
0.5
Watts
W/°C
Storage Temperature Range
Tstg
- 65 to +150
°C
Operating Junction Temperature
TJ
175
°C
ESD PROTECTION CHARACTERISTICS
Test Conditions
Class
Human Body Model
1 (Minimum)
Machine Model
M2 (Minimum)
Charge Device Model
C2 (Minimum)
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
Unit
Thermal Resistance, Junction to Case
RθJC
0.75
°C/W
NOTE - CAUTION - MOS devices are susceptible to damage from electrostatic charge. Reasonable precautions in handling and
packaging MOS devices should be observed.
Order this document
by MRF1570T1/D
MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
470 MHz, 70 W, 12.5 V
LATERAL N-CHANNEL
BROADBAND
RF POWER MOSFETs
CASE 1366-04, STYLE 1
TO-272-8 WRAP
PLASTIC
MRF1570T1(NT1)
MRF1570T1
MRF1570FT1
MRF1570NT1
MRF1570FNT1
CASE 1366A-02, STYLE 1
TO-272-8
PLASTIC
MRF1570FT1(FNT1)
Motorola, Inc. 2004
Rev. 3
相关PDF资料 |
PDF描述 |
|---|---|
| MRF1570NT1 | 2 CHANNEL, UHF BAND, Si, N-CHANNEL, RF POWER, MOSFET |
| MRF1570T1 | 2 CHANNEL, UHF BAND, Si, N-CHANNEL, RF POWER, MOSFET, TO-272 |
| MRF1570NT1 | 2 CHANNEL, UHF BAND, Si, N-CHANNEL, RF POWER, MOSFET, TO-272 |
| MRF1570FNT1 | 2 CHANNEL, UHF BAND, Si, N-CHANNEL, RF POWER, MOSFET, TO-272 |
| MRF1570T1 | 2 CHANNEL, UHF BAND, Si, N-CHANNEL, RF POWER, MOSFET, TO-272 |
相关代理商/技术参数 |
参数描述 |
|---|---|
| MRF1570FT1 | 制造商:Rochester Electronics LLC 功能描述: 制造商:Freescale Semiconductor 功能描述: |
| MRF1570N | 制造商:FREESCALE 制造商全称:Freescale Semiconductor, Inc 功能描述:RF Power Field Effect Transistors |
| MRF1570NT1 | 功能描述:射频MOSFET电源晶体管 RF LDMOS TO272-6N FORMED RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶体管极性: 频率:1800 MHz to 2000 MHz 增益:27 dB 输出功率:100 W 汲极/源极击穿电压: 漏极连续电流: 闸/源击穿电压: 最大工作温度: 封装 / 箱体:NI-780-4 封装:Tray |
| MRF1570NT1_08 | 制造商:FREESCALE 制造商全称:Freescale Semiconductor, Inc 功能描述:RF Power Field Effect Transistors |
| MRF1570T1 | 制造商:FREESCALE 制造商全称:Freescale Semiconductor, Inc 功能描述:RF Power Field Effect Transistors |
发布紧急采购，3分钟左右您将得到回复。