参数资料
型号: FAN5236MTCX
厂商: Fairchild Semiconductor
文件页数: 17/19页
文件大小: 0K
描述: IC CTLR DDR/PWM DUAL HE 28TSSOP
产品变化通告: Mold Compound Change 30/Nov/2007
标准包装: 1
应用: 控制器,移动式 DDR
输入电压: 5 V ~ 24 V
输出数: 2
输出电压: 0.9 V ~ 5 V
工作温度: -10°C ~ 85°C
安装类型: 表面贴装
封装/外壳: 28-TSSOP(0.173",4.40mm 宽)
供应商设备封装: 28-TSSOP
包装: 标准包装
产品目录页面: 1221 (CN2011-ZH PDF)
其它名称: FAN5236MTCXDKR
For the high-side MOSFET, V DS = V IN , which can be as
high as 20V in a typical portable application. Care
should be taken to include the delivery of the
MOSFET’s gate power (PGATE) in calculating the
power dissipation required for the FAN5236:
Layout Considerations
Switching converters, even during normal operation,
produce short pulses of current that could cause
substantial ringing and be a source of EMI if layout
constraints are not observed.
P G
ATE
= Q G × V CC × f SW
(32)
There are two sets of critical components in a DC-DC
where Q G is the total gate charge to reach V CC .
Low-Side Losses
Q2, however, switches on or off with its parallel
Schottky diode conducting; therefore V DS ≈ 0.5V. Since
P SW is proportional to V DS , Q2’s switching losses are
negligible and Q2 is selected based on R DS(ON) only.
Conduction losses for Q2 are given by:
(
P COND = 1 ? D ) × I OUT 2 × R DS ( ON ) (33)
where R DS(ON) is the R DS(ON) of the MOSFET at the
highest operating junction temperature, and:
converter. The switching power components process
large amounts of energy at high rates and are noise
generators. The low-power components responsible for
bias and feedback functions are sensitive to noise.
A multi-layer printed circuit board is recommended.
Dedicate one solid layer for a ground plane. Dedicate
another solid layer as a power plane and break this
plane into smaller islands of common voltage levels.
Notice all the nodes that are subjected to high-dV/dt
voltage swing; such as SW, HDRV, and LDRV. All
surrounding circuitry tends to couple the signals from
these nodes through stray capacitance. Do not oversize
copper traces connected to these nodes. Do not place
traces connected to the feedback components adjacent
V OUT
D =
V IN
is the minimum duty cycle for the converter.
(34)
to these traces. It is not recommended to use high-
density interconnect systems, or micro-vias, on these
signals. The use of blind or buried vias should be
limited to the low-current signals only. The use of
normal thermal vias is at the discretion of the designer.
Since D MIN < 20% for portable computers, (1-D) ≈ 1
produces a conservative result, further simplifying the
calculation.
The maximum power dissipation (P D(MAX) ) is a function of
the maximum allowable die temperature of the low-side
MOSFET, the Θ JA , and the maximum allowable ambient
temperature rise:
Keep the wiring traces from the IC to the MOSFET gate
and source as short as possible and capable of
handling peak currents of 2A. Minimize the area within
the gate-source path to reduce stray inductance and
eliminate parasitic ringing at the gate.
Locate small critical components, like the soft-start
capacitor and current sense resistors, as close as
P D ( MAX ) =
T J ( MAX ) ? T A ( MAX )
Θ JA
(35)
possible to the respective pins of the IC.
The FAN5236 utilizes advanced packaging technology
with lead pitch of 0.6mm. High-performance analog
Θ JA depends primarily on the amount of PCB area that
can be devoted to heat sinking (see FSC Application
Note AN-1029 — Maximum Power Enhancement
Techniques for SO-8 Power MOSFETs) .
? 2002 Fairchild Semiconductor Corporation
FAN5236 ? Rev. 1.3.2
17
semiconductors utilizing narrow lead spacing may
require special considerations in design and
manufacturing. It is critical to maintain proper
cleanliness of the area surrounding these devices.
www.fairchildsemi.com
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