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| 型号： | NTD3055-150-1G |
| 厂商： | ON Semiconductor |
| 文件页数： | 1/7页 |
| 文件大小： | 0K |
| 描述： | MOSFET N-CH 60V 9A IPAK |
| 产品变化通告： | Product Obsolescence 21/Jan/2010 |
| 标准包装： | 75 |
| FET 型： | MOSFET N 通道，金属氧化物 |
| FET 特点： | 标准 |
| 漏极至源极电压(Vdss)： | 60V |
| 电流 - 连续漏极(Id) @ 25° C： | 9A |
| 开态Rds（最大）@ Id, Vgs @ 25° C： | 150 毫欧 @ 4.5A，10V |
| Id 时的 Vgs(th)（最大）： | 4V @ 250µA |
| 闸电荷(Qg) @ Vgs： | 15nC @ 10V |
| 输入电容 (Ciss) @ Vds： | 280pF @ 25V |
| 功率 - 最大： | 1.5W |
| 安装类型： | 通孔 |
| 封装/外壳： | TO-251-3 短引线，IPak，TO-251AA |
| 供应商设备封装： | I-Pak |
| 包装： | 管件 |
NTD3055-150,
NVD3055-150
Power MOSFET
9.0 A, 60 V, N ? Channel DPAK
Designed for low voltage, high speed switching applications in
power supplies, converters and power motor controls and bridge
circuits.
Features
? NVD Prefix for Automotive and Other Applications Requiring
Unique Site and Control Change Requirements; AEC ? Q101
Qualified and PPAP Capable
? These Devices are Pb ? Free and are RoHS Compliant
http://onsemi.com
9.0 AMPERES, 60 VOLTS
R DS(on) = 122 m W (Typ)
N ? Channel
D
Typical Applications
? Power Supplies
? Converters
? Power Motor Controls
? Bridge Circuits
G
S
MAXIMUM RATINGS (T J = 25 ° C unless otherwise noted)
Rating Symbol
Drain ? to ? Source Voltage V DSS
Value
60
Unit
Vdc
MARKING
DIAGRAMS
4
Drain
Drain ? to ? Gate Voltage (R GS = 10 M W )
Gate ? to ? Source Voltage
? Continuous
? Non ? repetitive (t p v 10 ms)
Drain Current
? Continuous @ T A = 25 ° C
? Continuous @ T A = 100 ° C
? Single Pulse (t p v 10 m s)
Total Power Dissipation @ T A = 25 ° C
Derate above 25 ° C
Total Power Dissipation @ T A = 25 ° C (Note 1)
Total Power Dissipation @ T A = 25 ° C (Note 2)
Operating and Storage Temperature Range
V DGR
V GS
V GS
I D
I D
I DM
P D
T J , T stg
60
" 20
" 30
9.0
3.0
27
28.8
0.19
2.1
1.5
? 55 to 175
Vdc
Vdc
Adc
Apk
W
W/ ° C
W
W
° C
1 2
3
4
DPAK
CASE 369C
STYLE 2
“SURFACE MOUNT”
1
Gate
4
DPAK ? 3
CASE 369D
STYLE 2
2
Drain
4
Drain
3
Source
Single Pulse Drain ? to ? Source Avalanche
Energy ? Starting T J = 25 ° C
(V DD = 25 Vdc, V GS = 10 Vdc,
L = 1.0 mH, I L (pk) = 7.75 A, V DS = 60 Vdc)
Thermal Resistance
? Junction ? to ? Case
? Junction ? to ? Ambient (Note 1)
? Junction ? to ? Ambient (Note 2)
Maximum Lead Temperature for Soldering
Purposes, 1/8 ″ from case for 10 seconds
E AS
R q JC
R q JA
R q JA
T L
30
5.2
71.4
100
260
mJ
° C/W
° C
1
2
3
“STRAIGHT LEAD”
1 2 3
Gate Drain Source
3150 = Device Code
Y = Year
WW = Work Week
G = Pb ? Free Package
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. When surface mounted to an FR4 board using 0.5 sq in pad size.
2. When surface mounted to an FR4 board using minimum recommended
pad size.
ORDERING INFORMATION
See detailed ordering and shipping information in the package
dimensions section on page 5 of this data sheet.
? Semiconductor Components Industries, LLC, 2013
January, 2013 ? Rev. 5
1
Publication Order Number:
NTD3055 ? 150/D
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相关代理商/技术参数 |
参数描述 |
|---|---|
| NTD3055-150G | 功能描述:MOSFET 60V 9A N-Channel RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| NTD3055-150T4 | 功能描述:MOSFET 60V 9A N-Channel RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| NTD3055-150T4G | 功能描述:MOSFET 60V 9A N-Channel RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| NTD3055AV1 | 制造商:Rochester Electronics LLC 功能描述:- Bulk |
| NTD3055AVL1 | 制造商:ON Semiconductor 功能描述: |
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