参数资料
型号: MRF5S21100HSR3
厂商: FREESCALE SEMICONDUCTOR INC
元件分类: 功率晶体管
英文描述: S BAND, Si, N-CHANNEL, RF POWER, MOSFET
封装: ROHS COMPLIANT, NI-780S, CASE 465A-06, 2 PIN
文件页数: 7/12页
文件大小: 416K
代理商: MRF5S21100HSR3
4
RF Device Data
Freescale Semiconductor
MRF5S21100HR3 MRF5S21100HSR3
B1
R2
C4
C12
C9
C3
C10
C5
C11
C6
C7 C8
W1
R4
C15
C14
C13
C1
R3
R1
C2
Figure 2. MRF5S21100HR3(SR3) Test Circuit Component Layout
CUT
OUT
AREA
VGG
VDD
MRF5S21100L
Rev 03
Freescale has begun the transition of marking Printed Circuit Boards (PCBs) with the Freescale Semiconductor
signature/logo. PCBs may have either Motorola or Freescale markings during the transition period. These changes will have
no impact on form, fit or function of the current product.
相关PDF资料
PDF描述
MRF5S21100HR3 S BAND, Si, N-CHANNEL, RF POWER, MOSFET
MRF5S21100LSR3 S BAND, Si, N-CHANNEL, RF POWER, MOSFET
MRF5S21100LR3 S BAND, Si, N-CHANNEL, RF POWER, MOSFET
MRF5S21100L S BAND, Si, N-CHANNEL, RF POWER, MOSFET
MRF5S21130HR3 S BAND, Si, N-CHANNEL, RF POWER, MOSFET
相关代理商/技术参数
参数描述
MRF5S21100HSR5 功能描述:MOSFET RF N-CHAN 28V 23W NI-780S RoHS:是 类别:分离式半导体产品 >> RF FET 系列:- 产品目录绘图:MOSFET SOT-23-3 Pkg 标准包装:3,000 系列:- 晶体管类型:N 通道 JFET 频率:- 增益:- 电压 - 测试:- 额定电流:30mA 噪音数据:- 电流 - 测试:- 功率 - 输出:- 电压 - 额定:25V 封装/外壳:TO-236-3,SC-59,SOT-23-3 供应商设备封装:SOT-23-3(TO-236) 包装:带卷 (TR) 产品目录页面:1558 (CN2011-ZH PDF) 其它名称:MMBFJ309LT1GOSMMBFJ309LT1GOS-NDMMBFJ309LT1GOSTR
MRF5S21100LR3 制造商:MOTOROLA 制造商全称:Motorola, Inc 功能描述:The RF MOSFET Line RF Power Field Effect N-Channel Enhancement-Mode Lateral MOSFETs
MRF5S21100LSR3 制造商:MOTOROLA 制造商全称:Motorola, Inc 功能描述:The RF MOSFET Line RF Power Field Effect N-Channel Enhancement-Mode Lateral MOSFETs
MRF5S21130 制造商:MOTOROLA 制造商全称:Motorola, Inc 功能描述:The RF MOSFET Line RF Power Field Effect Transistor N-Channel Enhancement-Mode Lateral MOSFETs
MRF5S21130HR3 功能描述:射频MOSFET电源晶体管 HV5 LDMOS WCDMA NI880 RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶体管极性: 频率:1800 MHz to 2000 MHz 增益:27 dB 输出功率:100 W 汲极/源极击穿电压: 漏极连续电流: 闸/源击穿电压: 最大工作温度: 封装 / 箱体:NI-780-4 封装:Tray