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参数资料
| 型号： | MRF5S21100L |
| 厂商： | MOTOROLA INC |
| 元件分类： | 功率晶体管 |
| 英文描述： | S BAND, Si, N-CHANNEL, RF POWER, MOSFET |
| 封装： | NI-780, CASE 465-06, 2 PIN |
| 文件页数： | 1/12页 |
| 文件大小： | 204K |
| 代理商： | MRF5S21100L |
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MRF5S21100L MRF5S21100LR3 MRF5S21100LSR3
MOTOROLA RF DEVICE DATA
The RF MOSFET Line
RF Power Field Effect Transistors
N–Channel Enhancement–Mode Lateral MOSFETs
Designed for W–CDMA base station applications with frequencies from 2110
to 2170 MHz. Suitable for TDMA, CDMA and multicarrier amplifier applica-
tions. To be used in Class AB for PCN–PCS/cellular radio and WLL
applications.
Typical 2–carrier W–CDMA Performance for VDD = 28 Volts,
IDQ = 1050 mA, f1 = 2135 MHz, f2 = 2145 MHz, Channel Bandwidth =
3.84 MHz, Adjacent Channels Measured over 3.84 MHz BW @ f1 –5 MHz
and f2 +5 MHz, Distortion Products Measured over a 3.84 MHz BW
@ f1 –10 MHz and f2 +10 MHz, Peak/Avg. = 8.5 dB @ 0.01% Probability
on CCDF.
Output Power — 23 Watts Avg.
Power Gain — 13.5 dB
Efficiency — 26%
IM3 — –37 dBc
ACPR — –40 dBc
Internally Matched, Controlled Q, for Ease of Use
High Gain, High Efficiency and High Linearity
Integrated ESD Protection
Designed for Maximum Gain and Insertion Phase Flatness
Capable of Handling 10:1 VSWR, @ 28 Vdc, 2140 MHz, 100 Watts CW
Output Power
Excellent Thermal Stability
Characterized with Series Equivalent Large–Signal Impedance Parameters
Qualified Up to a Maximum of 32 VDD Operation
Available in Tape and Reel. R3 Suffix = 250 Units per 56 mm, 13 inch Reel.
Low Gold Plating Thickness on Leads. L Suffix Indicates 40″ Nominal.
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
Drain–Source Voltage
VDSS
65
Vdc
Gate–Source Voltage
VGS
–0.5, +15
Vdc
Total Device Dissipation @ TC = 25°C
Derate above 25
°C
PD
250
1.43
Watts
W/
°C
Storage Temperature Range
Tstg
– 65 to +150
°C
Operating Junction Temperature
TJ
200
°C
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
Unit
Thermal Resistance, Junction to Case
Case Temperature 80
°C, 100 W CW
Case Temperature 80
°C, 23 W CW
R
θJC
0.70
0.76
°C/W
ESD PROTECTION CHARACTERISTICS
Test Conditions
Class
Human Body Model
2 (Minimum)
Machine Model
M3 (Minimum)
Charge Device Model
C7 (Minimum)
NOTE – CAUTION – MOS devices are susceptible to damage from electrostatic charge. Reasonable precautions in handling and
packaging MOS devices should be observed.
Order this document
by MRF5S21100L/D
MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
MRF5S21100L
MRF5S21100LR3
MRF5S21100LSR3
2170 MHz, 23 W AVG.,
2 x W–CDMA, 28 V
LATERAL N–CHANNEL
RF POWER MOSFETs
CASE 465–06, STYLE 1
NI–780
MRF5S21100L, LR3
CASE 465A–06, STYLE 1
NI–780S
MRF5S21100LSR3
Motorola, Inc. 2003
REV 0
相关PDF资料 |
PDF描述 |
|---|---|
| MRF5S21130HR3 | S BAND, Si, N-CHANNEL, RF POWER, MOSFET |
| MRF5S21130HSR3 | S BAND, Si, N-CHANNEL, RF POWER, MOSFET |
| MRF5S21130HR3 | S BAND, Si, N-CHANNEL, RF POWER, MOSFET |
| MRF5S21130SR3 | S BAND, Si, N-CHANNEL, RF POWER, MOSFET |
| MRF5S21130R3 | S BAND, Si, N-CHANNEL, RF POWER, MOSFET |
相关代理商/技术参数 |
参数描述 |
|---|---|
| MRF5S21100LR3 | 制造商:MOTOROLA 制造商全称:Motorola, Inc 功能描述:The RF MOSFET Line RF Power Field Effect N-Channel Enhancement-Mode Lateral MOSFETs |
| MRF5S21100LSR3 | 制造商:MOTOROLA 制造商全称:Motorola, Inc 功能描述:The RF MOSFET Line RF Power Field Effect N-Channel Enhancement-Mode Lateral MOSFETs |
| MRF5S21130 | 制造商:MOTOROLA 制造商全称:Motorola, Inc 功能描述:The RF MOSFET Line RF Power Field Effect Transistor N-Channel Enhancement-Mode Lateral MOSFETs |
| MRF5S21130HR3 | 功能描述:射频MOSFET电源晶体管 HV5 LDMOS WCDMA NI880 RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶体管极性: 频率:1800 MHz to 2000 MHz 增益:27 dB 输出功率:100 W 汲极/源极击穿电压: 漏极连续电流: 闸/源击穿电压: 最大工作温度: 封装 / 箱体:NI-780-4 封装:Tray |
| MRF5S21130HR5 | 功能描述:射频MOSFET电源晶体管 HV5 LDMOS WCDMA NI880 RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶体管极性: 频率:1800 MHz to 2000 MHz 增益:27 dB 输出功率:100 W 汲极/源极击穿电压: 漏极连续电流: 闸/源击穿电压: 最大工作温度: 封装 / 箱体:NI-780-4 封装:Tray |
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