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参数资料
| 型号： | MRF5S21100HSR3 |
| 厂商： | FREESCALE SEMICONDUCTOR INC |
| 元件分类： | 功率晶体管 |
| 英文描述： | S BAND, Si, N-CHANNEL, RF POWER, MOSFET |
| 封装： | ROHS COMPLIANT, NI-780S, CASE 465A-06, 2 PIN |
| 文件页数： | 6/12页 |
| 文件大小： | 416K |
| 代理商： | MRF5S21100HSR3 |
MRF5S21100HR3 MRF5S21100HSR3
3
RF Device Data
Freescale Semiconductor
Figure 1. MRF5S21100HR3(SR3) Test Circuit Schematic
R2
VBIAS
VSUPPLY
C11
C8
C7
C5
C14
C3
C10
C1
RF
OUTPUT
RF
INPUT
R1
Z1
Z2
Z3
Z4
Z5
Z6
Z7
Z9
Z8
Z16
Z10 Z11
Z12
Z15
Z17
+
Z10
0.368″ x 1.136″ Microstrip
Z11
0.151″ x 0.393″ Microstrip
Z12
0.280″ x 0.220″ Microstrip
Z13
0.481″ x 0.142″ Microstrip
Z14
0.138″ x 0.080″ Microstrip
Z15
0.344″ x 0.080″ Microstrip
Z16
0.147″ x 0.099″ Microstrip
Z17
0.859″ x 0.080″ Microstrip
PCB
Arlon GX-0300-SS-22, 0.030″, εr = 2.55
Z1
0.674″ x 0.080″ Microstrip
Z2
0.421″ x 0.080″ Microstrip
Z3
0.140″ x 0.080″ Microstrip
Z4
1.031″ x 0.080″ Microstrip
Z5
0.380″ x 0.643″ Microstrip
Z6
0.080″ x 0.643″ Microstrip
Z7
0.927″ x 0.048″ Microstrip
Z8
0.620″ x 0.048″ Microstrip
Z9
0.079″ x 1.136″ Microstrip
DUT
B1
R3
C4
C13
C15
Z13 Z14
C2
C6
W1
R4
C12
+
C9
Table 5. MRF5S21100HR3(SR3) Test Circuit Component Designations and Values
Part
Description
Part Number
Manufacturer
B1
Short RF Bead
95F786
Newark
C1, C2
8.2 pF Chip Capacitors
100B8R2CP500X
ATC
C3
5.6 pF Chip Capacitor
100B5R6CP500X
ATC
C4
0.1 μF Chip Capacitor
C1210C104J5RAC
Kemet
C5, C7
7.5 pF Chip Capacitors
100B7R5JP500X
ATC
C6
1.2 pF Chip Capacitor
100B1R2BP500X
ATC
C8
1K pF Chip Capacitor
100B102JP500X
ATC
C9, C10
0.56 μF Chip Capacitors
C1825C564J5RAC
Kemet
C11
470 μF, 63 V Electrolytic Capacitor
95F4579
Newark
C12
100 μF, 50 V Electrolytic Capacitor
51F2913
Newark
C13
0.6-4.5 pF Gigatrim Variable Capacitor
44F3358
Newark
C14
2.7 pF Chip Capacitor
100B2R7CP500X
ATC
C15
0.4-2.5 pF Gigatrim Variable Capacitor
44F3367
Newark
R1
1 kW Chip Resistor
D5534M07B1K00R
Newark
R2
560 kW Chip Resistor
CR1206564JT
Newark
R3, R4
12 W Chip Resistors
RM73B2B120JT
Garrett Electronics
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相关代理商/技术参数 |
参数描述 |
|---|---|
| MRF5S21100HSR5 | 功能描述:MOSFET RF N-CHAN 28V 23W NI-780S RoHS:是 类别:分离式半导体产品 >> RF FET 系列:- 产品目录绘图:MOSFET SOT-23-3 Pkg 标准包装:3,000 系列:- 晶体管类型:N 通道 JFET 频率:- 增益:- 电压 - 测试:- 额定电流:30mA 噪音数据:- 电流 - 测试:- 功率 - 输出:- 电压 - 额定:25V 封装/外壳:TO-236-3，SC-59，SOT-23-3 供应商设备封装:SOT-23-3（TO-236） 包装:带卷 (TR) 产品目录页面:1558 (CN2011-ZH PDF) 其它名称:MMBFJ309LT1GOSMMBFJ309LT1GOS-NDMMBFJ309LT1GOSTR |
| MRF5S21100LR3 | 制造商:MOTOROLA 制造商全称:Motorola, Inc 功能描述:The RF MOSFET Line RF Power Field Effect N-Channel Enhancement-Mode Lateral MOSFETs |
| MRF5S21100LSR3 | 制造商:MOTOROLA 制造商全称:Motorola, Inc 功能描述:The RF MOSFET Line RF Power Field Effect N-Channel Enhancement-Mode Lateral MOSFETs |
| MRF5S21130 | 制造商:MOTOROLA 制造商全称:Motorola, Inc 功能描述:The RF MOSFET Line RF Power Field Effect Transistor N-Channel Enhancement-Mode Lateral MOSFETs |
| MRF5S21130HR3 | 功能描述:射频MOSFET电源晶体管 HV5 LDMOS WCDMA NI880 RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶体管极性: 频率:1800 MHz to 2000 MHz 增益:27 dB 输出功率:100 W 汲极/源极击穿电压: 漏极连续电流: 闸/源击穿电压: 最大工作温度: 封装 / 箱体:NI-780-4 封装:Tray |
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