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参数资料
| 型号： | MRF5S21100HR3 |
| 厂商： | FREESCALE SEMICONDUCTOR INC |
| 元件分类： | 功率晶体管 |
| 英文描述： | S BAND, Si, N-CHANNEL, RF POWER, MOSFET |
| 封装： | ROHS COMPLIANT, NI-780, CASE 465-06, 2 PIN |
| 文件页数： | 9/12页 |
| 文件大小： | 416K |
| 代理商： | MRF5S21100HR3 |
6
RF Device Data
Freescale Semiconductor
MRF5S21100HR3 MRF5S21100HSR3
TYPICAL CHARACTERISTICS
0
40
1
55
15
Gps
ACPR
IM3
Pout, OUTPUT POWER (WATTS) AVG. WCDMA
Figure 8. 2-Carrier W-CDMA ACPR, IM3, Power
Gain and Drain Efficiency versus Output Power
IM3
(dBc),
ACPR
(dBc)
VDD = 28 Vdc, IDQ = 1050 mA
f1 = 2135 MHz, f2 = 2145 MHz
2x WCDMA, 10 MHz @ 3.84 MHz Channel Bandwidth
PAR = 8.5 dB @ 0.01% Probability (CCDF)
35
20
30
25
30
20
35
15
40
10
45
5
50
10
ηD
η
D
,DRAIN
EFFICIENCY
(%),
G
ps
,POWER
GAIN
(dB)
220
109
100
108
107
106
120
140
160
180
200
TJ, JUNCTION TEMPERATURE (_C)
Figure 9. MTTF Factor versus Junction Temperature
This above graph displays calculated MTTF in hours x ampere2
drain current. Life tests at elevated temperatures have correlated to
better than
±10% of the theoretical prediction for metal failure. Divide
MTTF factor by ID2 for MTTF in a particular application.
MTTF
FACT
OR
(HOURS
x
AMPS
2 )
W-CDMA TEST SIGNAL
10
0.0001
100
0
PEAKTOAVERAGE (dB)
Figure 10. CCDF W-CDMA 3GPP, Test Model 1,
64 DPCH, 67% Clipping, Single Carrier Test Signal
PROBABILITY
(%)
10
1
0.1
0.01
0.001
24
6
8
Figure 11. 2-Carrier W-CDMA Spectrum
f, FREQUENCY (MHz)
110
120
70
20
80
60
50
(dB)
90
100
40
30
3.84 MHz
Channel BW
IM3 in
3.84 MHz BW
+IM3 in
3.84 MHz BW
ACPR in
3.84 MHz BW
+ACPR in
3.84 MHz BW
20
515
10
0
5
10
15
20
25
WCDMA. ACPR Measured in 3.84 MHz Channel
Bandwidth @
±5 MHz Offset. IM3 Measured in
3.84 MHz Bandwidth @
±10 MHz Offset. PAR =
8.5 dB @ 0.01% Probability on CCDF
相关PDF资料 |
PDF描述 |
|---|---|
| MRF5S21100LSR3 | S BAND, Si, N-CHANNEL, RF POWER, MOSFET |
| MRF5S21100LR3 | S BAND, Si, N-CHANNEL, RF POWER, MOSFET |
| MRF5S21100L | S BAND, Si, N-CHANNEL, RF POWER, MOSFET |
| MRF5S21130HR3 | S BAND, Si, N-CHANNEL, RF POWER, MOSFET |
| MRF5S21130HSR3 | S BAND, Si, N-CHANNEL, RF POWER, MOSFET |
相关代理商/技术参数 |
参数描述 |
|---|---|
| MRF5S21100HR5 | 功能描述:射频MOSFET电源晶体管 HV5 LDMOS WCDMA NI780H RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶体管极性: 频率:1800 MHz to 2000 MHz 增益:27 dB 输出功率:100 W 汲极/源极击穿电压: 漏极连续电流: 闸/源击穿电压: 最大工作温度: 封装 / 箱体:NI-780-4 封装:Tray |
| MRF5S21100HSR3 | 功能描述:MOSFET RF N-CHAN 28V 23W NI-780S RoHS:是 类别:分离式半导体产品 >> RF FET 系列:- 产品目录绘图:MOSFET SOT-23-3 Pkg 标准包装:3,000 系列:- 晶体管类型:N 通道 JFET 频率:- 增益:- 电压 - 测试:- 额定电流:30mA 噪音数据:- 电流 - 测试:- 功率 - 输出:- 电压 - 额定:25V 封装/外壳:TO-236-3，SC-59，SOT-23-3 供应商设备封装:SOT-23-3（TO-236） 包装:带卷 (TR) 产品目录页面:1558 (CN2011-ZH PDF) 其它名称:MMBFJ309LT1GOSMMBFJ309LT1GOS-NDMMBFJ309LT1GOSTR |
| MRF5S21100HSR5 | 功能描述:MOSFET RF N-CHAN 28V 23W NI-780S RoHS:是 类别:分离式半导体产品 >> RF FET 系列:- 产品目录绘图:MOSFET SOT-23-3 Pkg 标准包装:3,000 系列:- 晶体管类型:N 通道 JFET 频率:- 增益:- 电压 - 测试:- 额定电流:30mA 噪音数据:- 电流 - 测试:- 功率 - 输出:- 电压 - 额定:25V 封装/外壳:TO-236-3，SC-59，SOT-23-3 供应商设备封装:SOT-23-3（TO-236） 包装:带卷 (TR) 产品目录页面:1558 (CN2011-ZH PDF) 其它名称:MMBFJ309LT1GOSMMBFJ309LT1GOS-NDMMBFJ309LT1GOSTR |
| MRF5S21100LR3 | 制造商:MOTOROLA 制造商全称:Motorola, Inc 功能描述:The RF MOSFET Line RF Power Field Effect N-Channel Enhancement-Mode Lateral MOSFETs |
| MRF5S21100LSR3 | 制造商:MOTOROLA 制造商全称:Motorola, Inc 功能描述:The RF MOSFET Line RF Power Field Effect N-Channel Enhancement-Mode Lateral MOSFETs |
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