参数资料
型号: MRF5S19150SR3
厂商: FREESCALE SEMICONDUCTOR INC
元件分类: 功率晶体管
英文描述: L BAND, Si, N-CHANNEL, RF POWER, MOSFET
封装: NI-880S, CASE 465C-02, 2 PIN
文件页数: 8/12页
文件大小: 428K
代理商: MRF5S19150SR3
AR
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HIVE
INF
O
RMA
TI
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N
ARCHIVE
INFORMA
TION
Fr
eescale
Semiconductor
,Inc.
Freescale Semiconductor, Inc.
MRF5S19150R3 MRF5S19150SR3
MOTOROLA RF DEVICE DATA
For More Information On This Product,
Go to: www.freescale.com
TYPICAL CHARACTERISTICS
η
2020
5
15
1900
55
40
IRL
Gps
ACPR
IM3
f, FREQUENCY (MHz)
Figure 3. 2-Carrier N-CDMA Broadband Performance
G
ps
,POWER
GAIN
(dB)
,DRAINη
60
10
20
30
40
INPUT
RETURN
LOSS
(dB)
IRL,
VDD = 28 Vdc, Pout = 32 W (Avg.), IDQ = 1400 mA
2Carrier NCDMA, 2.5 MHz Carrier Spacing
1.228 MHz Channel Bandwidth
Peak/Avg. = 9.8 dB @ 0.01% Probability (CCDF)
EFFICIENCY
(%)
IM3
(dBc),
ACPR
(dBc)
50
14
35
13
30
12
25
11
20
10
30
9
35
8
40
7
45
6
50
1920
1940
1960
1980
2000
100
11
16
1
Pout, OUTPUT POWER (WATTS) PEP
Figure 4. Two-Tone Power Gain versus
Output Power
G
ps
,POWER
GAIN
(dB)
10
15
14
13
12
IDQ = 2100 mA
1700 mA
VDD = 28 Vdc
f1 = 1958.75 MHz, f2 = 1961.25 MHz
TwoTone Measurement, 2.5 MHz Tone Spacing
1400 mA
700 mA
1050 mA
100
55
15
1
IDQ = 2100 mA
1700 mA
Pout, OUTPUT POWER (WATTS) PEP
Figure 5. Third Order Intermodulation versus
Output Power
VDD = 28 Vdc
f1 = 1958.75 MHz, f2 = 1961.25 MHz
TwoTone Measurement, 2.5 MHz Tone Spacing
INTERMODULA
TION
DIST
ORTION
(dBc)
IM3,
THIRD
ORDER
10
1400 mA
700 mA
1050 mA
20
25
30
35
40
45
50
10
60
20
0.1
TWOTONE SPACING (MHz)
Figure 6. Intermodulation Distortion Products
versus Tone Spacing
INTERMODULA
TION
DIST
ORTION
(dBc)
IMD,
3rd Order
VDD = 28 Vdc, Pout = 150 W (PEP), IDQ = 1400 mA
TwoTone Measurements, Center Frequency = 1960 MHz
5th Order
7th Order
25
30
35
40
45
50
55
1
45
49
59
35
P3dB = 53.71 dBm (234.96 W)
Pin, INPUT POWER (dBm)
Figure 7. Pulse CW Output Power versus
Input Power
P out
,
OUTPUT
POWER
(dBm)
VDD = 28 Vdc, IDQ = 1400 mA
Pulsed CW, 8
sec (on), 1 msec (off)
Center Frequency = 1960 MHz
44
43
42
41
40
39
38
37
36
58
57
56
55
54
53
52
51
50
P1dB = 53.01 dBm (199.99 W)
相关PDF资料
PDF描述
MRF5S19150R3 L BAND, Si, N-CHANNEL, RF POWER, MOSFET
MRF5S19150S L BAND, Si, N-CHANNEL, RF POWER, MOSFET
MRF5S21045MBR1 S BAND, Si, N-CHANNEL, RF POWER, MOSFET, TO-272
MRF5S21045MR1 S BAND, Si, N-CHANNEL, RF POWER, MOSFET, TO-270
MRF5S21045NR1 S BAND, Si, N-CHANNEL, RF POWER, MOSFET, TO-270
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