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| 型号： | MRF5S19150SR3 |
| 厂商： | FREESCALE SEMICONDUCTOR INC |
| 元件分类： | 功率晶体管 |
| 英文描述： | L BAND, Si, N-CHANNEL, RF POWER, MOSFET |
| 封装： | NI-880S, CASE 465C-02, 2 PIN |
| 文件页数： | 6/12页 |
| 文件大小： | 428K |
| 代理商： | MRF5S19150SR3 |
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Fr
eescale
Semiconductor
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Freescale Semiconductor, Inc.
MRF5S19150R3 MRF5S19150SR3
MOTOROLA RF DEVICE DATA
For More Information On This Product,
Go to: www.freescale.com
Figure 1. MRF5S19150 Test Circuit Schematic
Z9
1.280″ x 0.046″ Microstrip
Z10
0.090″ x 1.055″ Microstrip
Z11
1.125″ x 0.068″ Microstrip
Z12
1.125″ x 0.068″ Microstrip
Z13
0.505″ x 1.055″ Microstrip
Z14
0.898″ x 0.105″ Microstrip
Z15
1.133″ x 0.082″ Microstrip
PCB
Arlon GX0300-55-22, 0.03″, εr = 2.55
Z1
1.023″ x 0.082″ Microstrip
Z2
0.398″ x 0.082″ Microstrip
Z3
0.203″ x 0.082″ Microstrip
Z4
0.074″ x 0.082″ Microstrip
Z5
0.630″ x 0.084″ Microstrip
Z6
0.557″ x 1.030″ x 0.237″ Microstrip Taper
Z7
0.103″ x 1.030″ Microstrip
Z8
1.280″ x 0.046″ Microstrip
C8
R2
VGG
VDD
C23
C16
C15
C1
C5
C14
C4
RF
OUTPUT
RF
INPUT
R1
Z1
Z2
Z4
Z5
Z6
Z8
Z11
Z13
Z14
+
DUT
C9
C22
C21
B1
R3
C24
Z10
Z15
C7
C6
Z7
C2
Z3
C3
Z9
C10
B2
R4
C11
C12
C13
C17
C18
C19
C20
C29
C28
C31
C30
C26
C27
C32
C33
C25
Z12
+
Table 1. MRF5S19150 Test Circuit Component Designations and Values
Part
Description
B1, B2
Short RF Beads
C1, C2
0.6 – 4.5 Variable Capacitors, Gigatrim
C3
0.8 pF Chip Capacitor, B Case
C4, C5, C13, C14, C24, C25
9.1 pF Chip Capacitors, B Case
C8, C10
1.0 F, 50 V SMT Tantalum Capacitors
C6, C12, C16, C17, C18, C27, C28, C29
0.1 F Chip Capacitors, B Case
C7, C11, C15, C26
1000 pF Chip Capacitors, B Case
C9
100 F, 50 V Electrolytic Capacitor
C23
470 F, 63 V Electrolytic Capacitor
C19, C20, C21, C22, C30, C31, C32, C33
22 F, 35 V Tantalum Capacitors
R1
1 kW Chip Resistor
R2
560 kW Chip Resistor
R3, R4
12 W Chip Resistors
相关PDF资料 |
PDF描述 |
|---|---|
| MRF5S19150R3 | L BAND, Si, N-CHANNEL, RF POWER, MOSFET |
| MRF5S19150S | L BAND, Si, N-CHANNEL, RF POWER, MOSFET |
| MRF5S21045MBR1 | S BAND, Si, N-CHANNEL, RF POWER, MOSFET, TO-272 |
| MRF5S21045MR1 | S BAND, Si, N-CHANNEL, RF POWER, MOSFET, TO-270 |
| MRF5S21045NR1 | S BAND, Si, N-CHANNEL, RF POWER, MOSFET, TO-270 |
相关代理商/技术参数 |
参数描述 |
|---|---|
| MRF5S21045 | 制造商:FREESCALE 制造商全称:Freescale Semiconductor, Inc 功能描述:RF Power Field Effect Transistors |
| MRF5S21045MBR1 | 功能描述:MOSFET RF N-CH 28V 10W TO272-4 RoHS:否 类别:分离式半导体产品 >> RF FET 系列:- 产品目录绘图:MOSFET SOT-23-3 Pkg 标准包装:3,000 系列:- 晶体管类型:N 通道 JFET 频率:- 增益:- 电压 - 测试:- 额定电流:30mA 噪音数据:- 电流 - 测试:- 功率 - 输出:- 电压 - 额定:25V 封装/外壳:TO-236-3，SC-59，SOT-23-3 供应商设备封装:SOT-23-3（TO-236） 包装:带卷 (TR) 产品目录页面:1558 (CN2011-ZH PDF) 其它名称:MMBFJ309LT1GOSMMBFJ309LT1GOS-NDMMBFJ309LT1GOSTR |
| MRF5S21045MR1 | 功能描述:MOSFET RF N-CH 28V 10W TO270-4 RoHS:否 类别:分离式半导体产品 >> RF FET 系列:- 产品目录绘图:MOSFET SOT-23-3 Pkg 标准包装:3,000 系列:- 晶体管类型:N 通道 JFET 频率:- 增益:- 电压 - 测试:- 额定电流:30mA 噪音数据:- 电流 - 测试:- 功率 - 输出:- 电压 - 额定:25V 封装/外壳:TO-236-3，SC-59，SOT-23-3 供应商设备封装:SOT-23-3（TO-236） 包装:带卷 (TR) 产品目录页面:1558 (CN2011-ZH PDF) 其它名称:MMBFJ309LT1GOSMMBFJ309LT1GOS-NDMMBFJ309LT1GOSTR |
| MRF5S21045NBR1 | 功能描述:射频MOSFET电源晶体管 2170MHZ 10W RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶体管极性: 频率:1800 MHz to 2000 MHz 增益:27 dB 输出功率:100 W 汲极/源极击穿电压: 漏极连续电流: 闸/源击穿电压: 最大工作温度: 封装 / 箱体:NI-780-4 封装:Tray |
| MRF5S21045NR1 | 功能描述:射频MOSFET电源晶体管 2170MHZ 10W RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶体管极性: 频率:1800 MHz to 2000 MHz 增益:27 dB 输出功率:100 W 汲极/源极击穿电压: 漏极连续电流: 闸/源击穿电压: 最大工作温度: 封装 / 箱体:NI-780-4 封装:Tray |
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