参数资料
型号: MRF275G
元件分类: 功率晶体管
英文描述: 2 CHANNEL, UHF BAND, Si, N-CHANNEL, RF POWER, MOSFET
封装: CASE 375-04, 4 PIN
文件页数: 14/16页
文件大小: 262K
代理商: MRF275G
Figure 12. 400 MHz Test Circuit
B1
Balun, 50
, 0.086″ O.D. 2″ Long,
Semi Rigid Coax
B2
Balun, 50
, 0.141″ O.D. 2″ Long,
Semi Rigid Coax
C1, C2, C8, C9
270 pF, ATC Chip Capacitor
C3, C5, C7
1.0 – 20 pF, Trimmer Capacitor
C4
15 pF, ATC Chip Capacitor
C6
33 pF, ATC Chip Capacitor
C10, C12, C13,
C16, C17
0.01
F, Ceramic Capacitor
C11
1.0
F, 50 V, Tantalum
C14, C15
680 pF, Feedthru Capacitor
C18
20
F, 50 V, Tantalum
L1, L2
#18 Wire, Hairpin Inductor
L3, L4
12 Turns #18, 0.340
″ I.D.,
Enameled Wire
L5
Ferroxcube VK200 20/4B
L6
3 Turns #16, 0.340
″ I.D.,
Enameled Wire
R1
1.0 k
, 1/4 W Resistor
R2, R3
10 k
, 1/4 W Resistor
Z1, Z2
0.400
″ x 0.250″, Microstrip Line
Z3, Z4
0.870
″ x 0.250″, Microstrip Line
Z5, Z6
0.500
″ x 0.250″, Microstrip Line
Board material
0.060
″ Teflon–fiberglass,
εr = 2.55, copper clad both sides, 2 oz. copper.
BIAS
C10
C11
R1
C12
C13
C14
C15
L5
L6
C18
28 V
B1
C3
C4
C5
C6
C7
B2
C2
L2
R3
L4
C16
C17
B
A
Z2
Z1
Z3
Z5
Z4
Z6
0.180
0.200
A
B
D.U.T.
R2
L3
C9
C1
L1
C8
7
REV 1
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MRF282SR1 S BAND, Si, N-CHANNEL, RF POWER, MOSFET
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