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参数资料
| 型号： | MRF275G |
| 元件分类： | 功率晶体管 |
| 英文描述： | 2 CHANNEL, UHF BAND, Si, N-CHANNEL, RF POWER, MOSFET |
| 封装： | CASE 375-04, 4 PIN |
| 文件页数： | 10/16页 |
| 文件大小： | 262K |
| 代理商： | MRF275G |
Figure 1. 500 MHz Test Circuit
B1
Balun, 50
, 0.086″ O.D. 2″ Long, Semi Rigid Coax
B2
Balun, 50
, Coax 0.141″ O.D. 2″ Long, Semi Rigid
C1, C2, C3, C4,
C10, C11, C12, C13
270 pF, ATC Chip Capacitor
C5, C8
1.0 – 20 pF, Trimmer Capacitor, Johanson
C6
22 pF, Mini–Unelco Capacitor
C7
15 pF, Unelco Capacitor
C9
2.1 pF, ATC Chip Capacitor
C14, C15, C16,
C20, C21, C22
0.1
F, Ceramic Capacitor
C17, C18
680 pF, Feedthru Capacitor
C19
10
F, 50 V, Electrolytic Capacitor, Tantalum
L1, L2
10 Turns AWG #24,
0.145
″ O.D., 106 nH
Taylor–Spring Inductor
L3, L4
10 Turns AWG #18,
0.340
″ I.D., Enameled Wire
L5
Ferroxcube VK200 20/4B
L6
4 Turns #16, 0.340
″ I.D.,
Enameled Wire
R1
1.0 k
,1/4 W Resistor
W1 – W4
20 x 200 x 250 mils, Wear Pads,
Beryllium–Copper, (See
Component Location Diagram)
Z1, Z2
1.10
″ x 0.245″, Microstrip Line
Z3, Z4, Z5, Z6
0.300
″ x 0.245″, Microstrip Line
Z7, Z8
1.00
″ x 0.245″, Microstrip Line
Board material
0.060
″ Teflon–fiberglass,
εr = 2.55, copper clad both sides, 2 oz. copper.
Points A are connected together on PCB.
Points B are connected together on PCB.
+VGG
C14
R1
C16
C17
C18
L5
L6
C19
+28 V
B1
C5
C6
C7
C8
B2
L4
C20
C21
B
A
Z4
Z3
Z7
Z5
Z8
Z6
B
D.U.T.
L3
C1
C10
L1
A
C15
+
C22
C2
C4
C3
Z2
Z1
L2
C13
C11
C12
C9
3
REV 1
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相关代理商/技术参数 |
参数描述 |
|---|---|
| MRF275L | 功能描述:射频MOSFET电源晶体管 5-500MHz 100Watts 28Volt Gain 8.8dB RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶体管极性: 频率:1800 MHz to 2000 MHz 增益:27 dB 输出功率:100 W 汲极/源极击穿电压: 漏极连续电流: 闸/源击穿电压: 最大工作温度: 封装 / 箱体:NI-780-4 封装:Tray |
| MRF281 | 制造商:MOTOROLA 制造商全称:Motorola, Inc 功能描述:RF POWER FIELD EFFECT TRANSISTORS |
| MRF281SR1 | 功能描述:IC MOSFET RF N-CHAN NI-200S RoHS:是 类别:分离式半导体产品 >> RF FET 系列:- 产品目录绘图:MOSFET SOT-23-3 Pkg 标准包装:3,000 系列:- 晶体管类型:N 通道 JFET 频率:- 增益:- 电压 - 测试:- 额定电流:30mA 噪音数据:- 电流 - 测试:- 功率 - 输出:- 电压 - 额定:25V 封装/外壳:TO-236-3，SC-59，SOT-23-3 供应商设备封装:SOT-23-3（TO-236） 包装:带卷 (TR) 产品目录页面:1558 (CN2011-ZH PDF) 其它名称:MMBFJ309LT1GOSMMBFJ309LT1GOS-NDMMBFJ309LT1GOSTR |
| MRF281SR1_06 | 制造商:FREESCALE 制造商全称:Freescale Semiconductor, Inc 功能描述:RF Power Field Effect Transistors |
| MRF281ZR1 | 功能描述:IC MOSFET RF N-CHAN NI-200Z RoHS:是 类别:分离式半导体产品 >> RF FET 系列:- 产品目录绘图:MOSFET SOT-23-3 Pkg 标准包装:3,000 系列:- 晶体管类型:N 通道 JFET 频率:- 增益:- 电压 - 测试:- 额定电流:30mA 噪音数据:- 电流 - 测试:- 功率 - 输出:- 电压 - 额定:25V 封装/外壳:TO-236-3，SC-59，SOT-23-3 供应商设备封装:SOT-23-3（TO-236） 包装:带卷 (TR) 产品目录页面:1558 (CN2011-ZH PDF) 其它名称:MMBFJ309LT1GOSMMBFJ309LT1GOS-NDMMBFJ309LT1GOSTR |
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