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参数资料
| 型号： | MRF136 |
| 元件分类： | 功率晶体管 |
| 英文描述： | UHF BAND, Si, N-CHANNEL, RF POWER, MOSFET |
| 封装： | CASE 211-07, 4 PIN |
| 文件页数： | 4/11页 |
| 文件大小： | 340K |
| 代理商： | MRF136 |
ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted.)
Characteristic
Symbol
Min
Typ
Max
Unit
OFF CHARACTERISTICS (1)
Drain–Source Breakdown Voltage
(VGS = 0, ID = 5.0 mA)
V(BR)DSS
65
—
Vdc
Zero–Gate Voltage Drain Current
(VDS = 28 V, VGS = 0)
IDSS
—
2.0
mAdc
Gate–Source Leakage Current
(VGS = 40 V, VDS = 0)
IGSS
—
1.0
Adc
ON CHARACTERISTICS (1)
Gate Threshold Voltage
(VDS = 10 V, ID = 25 mA)
VGS(th)
1.0
3.0
6.0
Vdc
Forward Transconductance
(VDS = 10 V, ID = 250 mA)
gfs
250
400
—
mmhos
DYNAMIC CHARACTERISTICS (1)
Input Capacitance
(VDS = 28 V, VGS = 0, f = 1.0 MHz)
Ciss
—
24
—
pF
Output Capacitance
(VDS = 28 V, VGS = 0, f = 1.0 MHz)
Coss
—
27
—
pF
Reverse Transfer Capacitance
(VDS = 28 V, VGS = 0, f = 1.0 MHz)
Crss
—
5.5
—
pF
FUNCTIONAL CHARACTERISTICS
Noise Figure
(VDS = 28 Vdc, ID = 500 mA, f = 150 MHz)
NF
—
1.0
—
dB
Common Source Power Gain (Figure 1)
(VDD = 28 Vdc, Pout = 15 W, f = 150 MHz, IDQ = 25 mA)
Gps
13
16
—
dB
Drain Efficiency (Figure 1)
(VDD = 28 Vdc, Pout = 15 W, f = 150 MHz, IDQ = 25 mA)
η
50
60
—
%
Electrical Ruggedness (Figure 1)
(VDD = 28 Vdc, Pout = 15 W, f = 150 MHz, IDQ = 25 mA,
VSWR 30:1 at all Phase Angles)
ψ
No Degradation in Output Power
NOTES:
1. Each side measured separately.
2
REV 7
相关PDF资料 |
PDF描述 |
|---|---|
| MRF1507T1 | UHF BAND, Si, N-CHANNEL, RF POWER, MOSFET |
| MRF1508 | UHF BAND, Si, N-CHANNEL, RF POWER, MOSFET |
| MRF1508T1 | UHF BAND, Si, N-CHANNEL, RF POWER, MOSFET |
| MRF1508 | UHF BAND, Si, N-CHANNEL, RF POWER, MOSFET |
| MRF1511NT1 | VHF BAND, Si, N-CHANNEL, RF POWER, MOSFET |
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