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参数资料
| 型号： | MRF136 |
| 元件分类： | 功率晶体管 |
| 英文描述： | UHF BAND, Si, N-CHANNEL, RF POWER, MOSFET |
| 封装： | CASE 211-07, 4 PIN |
| 文件页数： | 1/11页 |
| 文件大小： | 340K |
| 代理商： | MRF136 |
The RF MOSFET Line
RF Power
Field-Effect Transistors
N-Channel Enhancement-Mode MOSFET
Designed for wideband large–signal amplifier and oscillator applications up to
400 MHz range, in single ended configuration.
Guaranteed 28 Volt, 150 MHz Performance
Output Power = 15 Watts
Narrowband Gain = 16 dB (Typ)
Efficiency = 60% (Typical)
Small–Signal and Large–Signal
Characterization
100% Tested For Load
Mismatch At All Phase
Angles With 30:1 VSWR
Excellent Thermal Stability,
Ideally Suited For Class A
Operation
Facilitates Manual Gain
Control, ALC and
Modulation Techniques
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
Rating
Symbol
Value
Unit
Drain–Source Voltage
VDSS
65
Vdc
Drain–Gate Voltage (RGS = 1.0 M)
VDGR
65
Vdc
Gate–Source Voltage
VGS
±40
Vdc
Drain Current — Continuous
ID
2.5
Adc
Total Device Dissipation @ TC = 25°C
Derate above 25
°C
PD
55
0.314
Watts
W/
°C
Storage Temperature Range
Tstg
– 65 to +150
°C
Operating Junction Temperature
TJ
200
°C
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
Unit
Characteristic
Symbol
Max
Unit
Thermal Resistance, Junction to Case
R
θJC
3.2
°C/W
NOTE – CAUTION – MOS devices are susceptible to damage from electrostatic charge. Reasonable precautions in handling and
packaging MOS devices should be observed.
MRF136
15 W, to 400 MHz
N–CHANNEL
MOS BROADBAND
RF POWER FET
CASE 211–07, STYLE 2
D
G
S
Order this document
by MRF136/D
SEMICONDUCTOR TECHNICAL DATA
1
REV 7
相关PDF资料 |
PDF描述 |
|---|---|
| MRF1507T1 | UHF BAND, Si, N-CHANNEL, RF POWER, MOSFET |
| MRF1508 | UHF BAND, Si, N-CHANNEL, RF POWER, MOSFET |
| MRF1508T1 | UHF BAND, Si, N-CHANNEL, RF POWER, MOSFET |
| MRF1508 | UHF BAND, Si, N-CHANNEL, RF POWER, MOSFET |
| MRF1511NT1 | VHF BAND, Si, N-CHANNEL, RF POWER, MOSFET |
相关代理商/技术参数 |
参数描述 |
|---|---|
| MRF136MP | 制造商:M/A-COM Technology Solutions 功能描述:RF POWER TRANSISTOR MOSFET 制造商:M/A-COM Technology Solutions 功能描述:MRF136MP |
| MRF136Y | 制造商:M/A-COM Technology Solutions 功能描述:TRANS MOSFET N-CH 65V 5A 2PIN CASE 319B-02 - Bulk 制造商:M/A-COM Technology Solutions 功能描述:RF POWER TRANSISTOR MOSFET 制造商:M/A-COM Technology Solutions 功能描述:Trans RF MOSFET N-CH 65V 5A 5-Pin Case 319B-02 |
| MRF137 | 功能描述:射频MOSFET电源晶体管 5-400MHz 30Watts 28Volt Gain 13dB RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶体管极性: 频率:1800 MHz to 2000 MHz 增益:27 dB 输出功率:100 W 汲极/源极击穿电压: 漏极连续电流: 闸/源击穿电压: 最大工作温度: 封装 / 箱体:NI-780-4 封装:Tray |
| MRF13750H-915MHZ | 功能描述:MRF13750H-915MHZ 制造商:nxp usa inc. 系列:- 零件状态:在售 晶体管类型:LDMOS（双） 频率:700MHz ~ 1.3GHz 增益:20.6dB 电压 - 测试:50V 额定电流:10μA 噪声系数:- 功率 - 输出:650W 电压 - 额定:105V 封装/外壳:SOT-979A 供应商器件封装:NI-1230H-4S 标准包装:1 |
| MRF13750HR5 | 功能描述:RF POWER LDMOS TRANSISTOR 750 W 制造商:nxp usa inc. 系列:- 零件状态:在售 晶体管类型:LDMOS（双） 频率:700MHz ~ 1.3GHz 增益:20.6dB 电压 - 测试:50V 额定电流:10μA 噪声系数:- 功率 - 输出:650W 电压 - 额定:105V 封装/外壳:SOT-979A 供应商器件封装:NI-1230H-4S 标准包装:1 |
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