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参数资料
| 型号： | IDT71256L35YGI |
| 厂商： | IDT, Integrated Device Technology Inc |
| 文件页数： | 1/10页 |
| 文件大小： | 0K |
| 描述： | IC SRAM 256KBIT 35NS 28SOJ |
| 标准包装： | 270 |
| 格式 - 存储器： | RAM |
| 存储器类型： | SRAM - 异步 |
| 存储容量： | 256K (32K x 8) |
| 速度： | 35ns |
| 接口： | 并联 |
| 电源电压： | 4.5 V ~ 5.5 V |
| 工作温度： | -40°C ~ 85°C |
| 封装/外壳： | 28-BSOJ |
| 供应商设备封装： | 28-SOJ |
| 包装： | 管件 |
| 产品目录页面： | 1256 (CN2011-ZH PDF) |
| 其它名称： | 71256L35YGI 800-1425 800-1425-5 800-1425-ND |
CMOS Static RAM
256K (32K x 8-Bit)
IDT71256S
IDT71256L
High-speed address/chip select time
Low-power operation
Battery Backup operation – 2V data retention
Produced with advanced high-performance CMOS
Input and output directly TTL-compatible
Available in standard 28-pin (300 or 600 mil) ceramic DIP,
Military product compliant to MIL-STD-883, Class B
Features
◆
– Military: 25/35/45/55/70/85/100ns (max.)
– Commercial/Industrial: 20/25/35ns (max.) low power only
◆
◆
◆
technology
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28-pin (300 mil) SOJ
◆
Description
The IDT 71256 is a 262,144-bit high-speed static RAM organized as
32K x 8. It is fabricated using high-performance, high-reliability CMOS
technology.
Functional Block Diagram
A 0
Address access times as fast as 20ns are available with power
consumption of only 350mW (typ.). The circuit also offers a reduced power
standby mode. When CS goes HIGH, the circuit will automatically go to and
remain in, a low-power standby mode as long as CS remains HIGH. This
capability provides significant system level power and cooling savings.
The low-power (L) version also offers a battery backup data retention
capability where the circuit typically consumes only 5 μ W when operating
off a 2V battery.
The IDT71256 is packaged in a 28-pin (300 or 600 mil) ceramic DIP,
a 28-pin 300 mil SOJ providing high board level packing densities.
The IDT71256 military RAM is manufactured in compliance with the
latest revision of MIL-STD-883, Class B, making it ideally suited to military
temperature applications demanding the highest level of performance and
reliability.
V CC
A 14
ADDRESS
DECODER
262,144 BIT
MEMORY ARRAY
GND
I/O 0
INPUT
I/O CONTROL
DATA
CIRCUIT
I/O 7
CS
,
OE
WE
CONTROL
CIRCUIT
1
2946 drw 01
SEPTEMBER 2013
?2013 Integrated Device Technology, Inc.
DSC-2946/13
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相关代理商/技术参数 |
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| IDT71256L35YGI8 | 功能描述:IC SRAM 256KBIT 35NS 28SOJ RoHS:是 类别:集成电路 (IC) >> 存储器 系列:- 标准包装:72 系列:- 格式 - 存储器:RAM 存储器类型:SRAM - 同步 存储容量:4.5M（256K x 18） 速度:133MHz 接口:并联 电源电压:3.135 V ~ 3.465 V 工作温度:0°C ~ 70°C 封装/外壳:100-LQFP 供应商设备封装:100-TQFP（14x20） 包装:托盘 |
| IDT71256L35YI | 功能描述:IC SRAM 256KBIT 35NS 28SOJ RoHS:否 类别:集成电路 (IC) >> 存储器 系列:- 产品变化通告:Product Discontinuation 26/Apr/2010 标准包装:136 系列:- 格式 - 存储器:RAM 存储器类型:SRAM - 同步，DDR II 存储容量:18M（1M x 18） 速度:200MHz 接口:并联 电源电压:1.7 V ~ 1.9 V 工作温度:0°C ~ 70°C 封装/外壳:165-TBGA 供应商设备封装:165-CABGA（13x15） 包装:托盘 其它名称:71P71804S200BQ |
| IDT71256L35YI8 | 功能描述:IC SRAM 256KBIT 35NS 28SOJ RoHS:否 类别:集成电路 (IC) >> 存储器 系列:- 产品变化通告:Product Discontinuation 26/Apr/2010 标准包装:136 系列:- 格式 - 存储器:RAM 存储器类型:SRAM - 同步，DDR II 存储容量:18M（1M x 18） 速度:200MHz 接口:并联 电源电压:1.7 V ~ 1.9 V 工作温度:0°C ~ 70°C 封装/外壳:165-TBGA 供应商设备封装:165-CABGA（13x15） 包装:托盘 其它名称:71P71804S200BQ |
| IDT71256L45DB | 制造商:Integrated Device Technology Inc 功能描述:IC SRAM 256KBIT 45NS 28CDIP |
| IDT71256L45TDB | 制造商:Integrated Device Technology Inc 功能描述: 制造商:Integrated Device Technology Inc 功能描述:IC SRAM 256KBIT 45NS 28CDIP |
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