参数资料
型号: IDT70V09L20PF
厂商: IDT, Integrated Device Technology Inc
文件页数: 5/17页
文件大小: 0K
描述: IC SRAM 1MBIT 20NS 100TQFP
标准包装: 6
格式 - 存储器: RAM
存储器类型: SRAM - 双端口,异步
存储容量: 1M (128K x 8)
速度: 20ns
接口: 并联
电源电压: 3 V ~ 3.6 V
工作温度: 0°C ~ 70°C
封装/外壳: 100-LQFP
供应商设备封装: 100-TQFP(14x14)
包装: 托盘
其它名称: 70V09L20PF
IDT70V09L
High-Speed 128K x 8 Dual-Port Static RAM
Industrial and Commercial Temperature Ranges
DC Electrical Characteristics Over the Operating
Temperature and Supply Voltage Range (V CC = 3.3V ± 0.3V)
70V09L
Input Leakage Current
Symbol
|I LI |
|I LO |
V OL
V OH
Parameter
(1)
Output Leakage Current
Output Low Voltage
Output High Voltage
Test Conditions
V CC = 3.6V, V IN = 0V to V CC
CE (2) = V IH , V OUT = 0V to V CC
I OL = +4mA
I OH = -4mA
Min.
___
___
___
2.4
Max.
5
5
0.4
___
Unit
μA
μA
V
V
NOTES:
1. At Vcc < 2.0V, input leakages are undefined.
2. Refer to Truth Table I - Chip Enable .
DC Electrical Characteristics Over the Operating
Temperature and Supply Voltage Range (5) (V CC = 3.3V ± 0.3V)
70V09L15
Com'l Only
70V09L20
Com'l
& Ind
4852 tbl 09
Symbol
Parameter
Test Condition
Version
Typ. (1)
Max.
Typ. (1)
Max.
Unit
CE "A" = V IL and CE "B" = V IH
I CC
I SB1
I SB2
I SB3
I SB4
Dynamic Operating
Current
(Both Ports Active)
Standby Current
(Both Ports - TTL Level
Inputs)
Standby Current
(One Port - TTL Level
Inputs)
Full Standby Current
(Both Ports - All CMOS
Level Inputs)
Full Standby Current
(One Port - All CMOS
Level Inputs)
CE = V IL , Outputs Disabled
SEM = V IH
f = f MAX (2)
CE L = CE R = V IH
SEM R = SEM L = V IH
f = f MAX (2)
(4)
Active Port Outputs Disabled,
f=f MAX (2) , SEM R = SEM L = V IH
Both Ports CE L and CE R > V CC - 0.2V,
V IN > V CC - 0.2V or V IN < 0.2V, f = 0 (3)
SEM R = SEM L > V CC - 0.2V
CE "A" < 0.2V and CE "B" > V CC - 0.2V (4) ,
SEM R = SEM L > V CC - 0.2V,
V IN > V CC - 0.2V or V IN < 0.2V,
Active Port Outputs Disabled , f = f MAX (2)
COM'L
IND
COM'L
IND
COM'L
IND
COM'L
IND
COM'L
IND
L
L
L
L
L
L
L
L
L
L
145
____
40
____
100
____
0.2
____
95
____
235
____
70
____
155
____
3.0
____
150
____
135
135
35
35
90
90
0.2
0.2
90
90
205
220
55
65
140
150
3.0
3.0
135
145
mA
mA
mA
mA
mA
NOTES:
4852 tbl 10
1. V CC = 3.3V, T A = +25°C, and are not production tested. I CCDC = 90mA (Typ.)
2. At f = f MAX , address and control lines (except Output Enable) are cycling at the maximum frequency read cycle of 1/t RC, and using “AC Test Conditions" of input levels of GND
to 3V.
3. f = 0 means no address or control lines change.
4. Port "A" may be either left or right port. Port "B" is the opposite from port "A".
5. Refer to Truth Table I - Chip Enable.
5
相关PDF资料
PDF描述
IDT7015S25G IC SRAM 72KBIT 25NS 68PGA
IDT7015S20G IC SRAM 72KBIT 20NS 68PGA
IDT7015S17G IC SRAM 72KBIT 17NS 68PGA
KMPC8560PXAQFB IC MPU POWERQUICC III 783-FCPBGA
IDT7015S15G IC SRAM 72KBIT 15NS 68PGA
相关代理商/技术参数
参数描述
IDT70V09L20PF8 功能描述:IC SRAM 1MBIT 20NS 100TQFP RoHS:否 类别:集成电路 (IC) >> 存储器 系列:- 标准包装:1,000 系列:- 格式 - 存储器:RAM 存储器类型:SRAM - 双端口,同步 存储容量:1.125M(32K x 36) 速度:5ns 接口:并联 电源电压:3.15 V ~ 3.45 V 工作温度:-40°C ~ 85°C 封装/外壳:256-LBGA 供应商设备封装:256-CABGA(17x17) 包装:带卷 (TR) 其它名称:70V3579S5BCI8
IDT70V09L20PFGI 制造商:Integrated Device Technology Inc 功能描述:IC SRAM 1MBIT 20NS 100TQFP
IDT70V09L20PFGI8 制造商:Integrated Device Technology Inc 功能描述:IC SRAM 1MBIT 20NS 100TQFP
IDT70V09L20PFI 功能描述:IC SRAM 1MBIT 20NS 100TQFP RoHS:否 类别:集成电路 (IC) >> 存储器 系列:- 标准包装:3,000 系列:- 格式 - 存储器:EEPROMs - 串行 存储器类型:EEPROM 存储容量:8K (1K x 8) 速度:400kHz 接口:I²C,2 线串口 电源电压:1.7 V ~ 5.5 V 工作温度:-40°C ~ 85°C 封装/外壳:8-SOIC(0.154",3.90mm 宽) 供应商设备封装:8-SOIC 包装:带卷 (TR)
IDT70V09L20PFI8 功能描述:IC SRAM 1MBIT 20NS 100TQFP RoHS:否 类别:集成电路 (IC) >> 存储器 系列:- 标准包装:1,000 系列:- 格式 - 存储器:RAM 存储器类型:SRAM - 双端口,同步 存储容量:1.125M(32K x 36) 速度:5ns 接口:并联 电源电压:3.15 V ~ 3.45 V 工作温度:-40°C ~ 85°C 封装/外壳:256-LBGA 供应商设备封装:256-CABGA(17x17) 包装:带卷 (TR) 其它名称:70V3579S5BCI8