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| 型号： | HUF75645P3 |
| 厂商： | Fairchild Semiconductor |
| 文件页数： | 4/10页 |
| 文件大小： | 0K |
| 描述： | MOSFET N-CH 100V 75A TO-220AB |
| 产品培训模块： | High Voltage Switches for Power Processing |
| 产品目录绘图： | MOSFET TO-220AB |
| 标准包装： | 400 |
| 系列： | UltraFET™ |
| FET 型： | MOSFET N 通道，金属氧化物 |
| FET 特点： | 逻辑电平门 |
| 漏极至源极电压(Vdss)： | 100V |
| 电流 - 连续漏极(Id) @ 25° C： | 75A |
| 开态Rds（最大）@ Id, Vgs @ 25° C： | 14 毫欧 @ 75A，10V |
| Id 时的 Vgs(th)（最大）： | 4V @ 250µA |
| 闸电荷(Qg) @ Vgs： | 238nC @ 20V |
| 输入电容 (Ciss) @ Vds： | 3790pF @ 25V |
| 功率 - 最大： | 310W |
| 安装类型： | 通孔 |
| 封装/外壳： | TO-220-3 |
| 供应商设备封装： | TO-220AB |
| 包装： | 管件 |
| 产品目录页面： | 1605 (CN2011-ZH PDF) |
HUF75645P3, HUF75645S3S
Typical Performance Curves
(Continued)
600
500
If R = 0
t AV = (L)(I AS )/(1.3*RATED BV DSS - V DD )
If R ≠ 0
t AV = (L/R)ln[(I AS *R)/(1.3*RATED BV DSS - V DD ) +1]
100
100 μ s
100
STARTING T J = 25 o C
10
1
OPERATION IN THIS
AREA MAY BE
LIMITED BY r DS(ON)
SINGLE PULSE
T J = MAX RATED
T C = 25 o C
1ms
10ms
10
STARTING T J = 150 o C
1
10
100
300
0.001
0.01
0.1
1
V DS , DRAIN TO SOURCE VOLTAGE (V)
FIGURE 5. FORWARD BIAS SAFE OPERATING AREA
t AV , TIME IN AVALANCHE (ms)
NOTE: Refer to Fairchild Application Notes AN9321 and AN9322.
FIGURE 6. UNCLAMPED INDUCTIVE SWITCHING
CAPABILITY
150
120
PULSE DURATION = 80 μ s
DUTY CYCLE = 0.5% MAX
V DD = 15V
150
120
V GS = 20V
V GS = 10V
V GS = 7V
V GS = 6V
V GS =5V
90
90
60
T J = 175 o C
60
30
0
T J = -55 o C
T J = 25 o C
30
0
PULSE DURATION = 80 μ s
DUTY CYCLE = 0.5% MAX
T C = 25 o C
2
3
4 5
6
0
1 2 3
4
V GS , GATE TO SOURCE VOLTAGE (V)
FIGURE 7. TRANSFER CHARACTERISTICS
V DS , DRAIN TO SOURCE VOLTAGE (V)
FIGURE 8. SATURATION CHARACTERISTICS
3.0
PULSE DURATION = 80 μ s
V GS = 10V, I D = 75A
1.2
V GS = V DS , I D = 250 μ A
DUTY CYCLE = 0.5% MAX
2.5
1.0
2.0
0.8
1.5
0.6
1.0
0.5
0.4
-80
-40
0 40 80 120
160
200
-80
-40
0
40
80
120
160
200
T J , JUNCTION TEMPERATURE ( o C)
FIGURE 9. NORMALIZED DRAIN TO SOURCE ON
RESISTANCE vs JUNCTION TEMPERATURE
?2001 Fairchild Semiconductor Corporation
T J , JUNCTION TEMPERATURE ( o C)
FIGURE 10. NORMALIZED GATE THRESHOLD VOLTAGE vs
JUNCTION TEMPERATURE
HUF75645P3, HUF75645S3S Rev. C0
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相关代理商/技术参数 |
参数描述 |
|---|---|
| HUF75645P3_Q | 功能描述:MOSFET 75a 100V N-Ch UltraFET RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| HUF75645P3_SB82282 | 制造商:Fairchild Semiconductor Corporation 功能描述: |
| HUF75645P3T | 制造商:未知厂家 制造商全称:未知厂家 功能描述:TRANSISTOR | MOSFET | N-CHANNEL | 100V V(BR)DSS | 75A I(D) | TO-220AB |
| HUF75645S3S | 功能描述:MOSFET 75a 100V N-Ch UltraFET RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| HUF75645S3ST | 功能描述:MOSFET 75a 100V N-Ch UltraFET RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
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