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参数资料
| 型号： | HUF75645P3 |
| 厂商： | Fairchild Semiconductor |
| 文件页数： | 2/10页 |
| 文件大小： | 0K |
| 描述： | MOSFET N-CH 100V 75A TO-220AB |
| 产品培训模块： | High Voltage Switches for Power Processing |
| 产品目录绘图： | MOSFET TO-220AB |
| 标准包装： | 400 |
| 系列： | UltraFET™ |
| FET 型： | MOSFET N 通道，金属氧化物 |
| FET 特点： | 逻辑电平门 |
| 漏极至源极电压(Vdss)： | 100V |
| 电流 - 连续漏极(Id) @ 25° C： | 75A |
| 开态Rds（最大）@ Id, Vgs @ 25° C： | 14 毫欧 @ 75A，10V |
| Id 时的 Vgs(th)（最大）： | 4V @ 250µA |
| 闸电荷(Qg) @ Vgs： | 238nC @ 20V |
| 输入电容 (Ciss) @ Vds： | 3790pF @ 25V |
| 功率 - 最大： | 310W |
| 安装类型： | 通孔 |
| 封装/外壳： | TO-220-3 |
| 供应商设备封装： | TO-220AB |
| 包装： | 管件 |
| 产品目录页面： | 1605 (CN2011-ZH PDF) |
HUF75645P3, HUF75645S3S
Electrical Specifications
T C = 25 o C, Unless Otherwise Specified
PARAMETER
SYMBOL
TEST CONDITIONS
MIN
TYP
MAX
UNITS
OFF STATE SPECIFICATIONS
Drain to Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate to Source Leakage Current
BV DSS
I DSS
I GSS
I D = 250 μ A, V GS = 0V (Figure 11)
V DS = 95V, V GS = 0V
V DS = 90V, V GS = 0V, T C = 150 o C
V GS = ± 20V
100
-
-
-
-
-
-
-
-
1
250
± 100
V
μ A
μ A
nA
ON STATE SPECIFICATIONS
Gate to Source Threshold Voltage
Drain to Source On Resistance
V GS(TH)
r DS(ON)
V GS = V DS , I D = 250 μ A (Figure 10)
I D = 75A, V GS = 10V (Figure 9)
2
-
-
0.0115
4
0.014
V
?
THERMAL SPECIFICATIONS
Thermal Resistance Junction to Case
Thermal Resistance Junction to
R θ JC
R θ JA
TO-220 and TO-263
-
-
-
-
0.48
62
o C/W
o C/W
Ambient
SWITCHING SPECIFICATIONS (V GS = 10V)
Turn-On Time
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Turn-Off Time
t ON
t d(ON)
t r
t d(OFF)
t f
t OFF
V DD = 50V, I D = 75A
V GS = 10V,
R GS = 2.5 ?
(Figures 18, 19)
-
-
-
-
-
-
-
14
117
41
97
-
197
-
-
-
-
207
ns
ns
ns
ns
ns
ns
GATE CHARGE SPECIFICATIONS
Total Gate Charge
Gate Charge at 10V
Threshold Gate Charge
Gate to Source Gate Charge
Gate to Drain “Miller” Charge
Q g(TOT)
Q g(10)
Q g(TH)
Q gs
Q gd
V GS = 0V to 20V
V GS = 0V to 10V
V GS = 0V to 2V
V DD = 50V,
I D = 75A,
I g(REF) = 1.0mA
(Figures 13, 16, 17)
-
-
-
-
-
198
106
6.8
14
41
238
127
8.2
-
-
nC
nC
nC
nC
nC
CAPACITANCE SPECIFICATIONS
Input Capacitance
C ISS
V DS = 25V, V GS = 0V,
-
3790
-
pF
f = 1MHz
Output Capacitance
Reverse Transfer Capacitance
C OSS
C RSS
(Figure 12)
-
-
810
230
-
-
pF
pF
Source to Drain Diode Specifications
PARAMETER
Source to Drain Diode Voltage
Reverse Recovery Time
Reverse Recovered Charge
SYMBOL
V SD
t rr
Q RR
TEST CONDITIONS
I SD = 75A
I SD = 35A
I SD = 75A, dI SD /dt = 100A/ μ s
I SD = 75A, dI SD /dt = 100A/ μ s
MIN
-
-
-
-
TYP
-
-
-
-
MAX
1.25
1.00
145
360
UNITS
V
V
ns
nC
?2001 Fairchild Semiconductor Corporation
HUF75645P3, HUF75645S3S Rev. C0
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相关代理商/技术参数 |
参数描述 |
|---|---|
| HUF75645P3_Q | 功能描述:MOSFET 75a 100V N-Ch UltraFET RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| HUF75645P3_SB82282 | 制造商:Fairchild Semiconductor Corporation 功能描述: |
| HUF75645P3T | 制造商:未知厂家 制造商全称:未知厂家 功能描述:TRANSISTOR | MOSFET | N-CHANNEL | 100V V(BR)DSS | 75A I(D) | TO-220AB |
| HUF75645S3S | 功能描述:MOSFET 75a 100V N-Ch UltraFET RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| HUF75645S3ST | 功能描述:MOSFET 75a 100V N-Ch UltraFET RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
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