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参数资料
| 型号： | BSS138_D87Z |
| 厂商： | Fairchild Semiconductor |
| 文件页数： | 2/5页 |
| 文件大小： | 0K |
| 描述： | MOSFET N-CH 50V 220MA SOT-23 |
| 产品培训模块： | High Voltage Switches for Power Processing |
| 产品变化通告： | Mold Compound Change 12/Dec/2007 |
| 标准包装： | 10,000 |
| FET 型： | MOSFET N 通道，金属氧化物 |
| FET 特点： | 逻辑电平门 |
| 漏极至源极电压(Vdss)： | 50V |
| 电流 - 连续漏极(Id) @ 25° C： | 220mA |
| 开态Rds（最大）@ Id, Vgs @ 25° C： | 3.5 欧姆 @ 220mA，10V |
| Id 时的 Vgs(th)（最大）： | 1.5V @ 1mA |
| 闸电荷(Qg) @ Vgs： | 2.4nC @ 10V |
| 输入电容 (Ciss) @ Vds： | 27pF @ 25V |
| 功率 - 最大： | 360mW |
| 安装类型： | 表面贴装 |
| 封装/外壳： | TO-236-3，SC-59，SOT-23-3 |
| 供应商设备封装： | SOT-23 |
| 包装： | 带卷 (TR) |
Electrical Characteristics
T A = 25°C unless otherwise noted
Symbol
Parameter
Test Conditions
Min Typ Max
Units
Off Characteristics
BV DSS
? BV DSS
? T J
Drain–Source Breakdown Voltage
Breakdown Voltage Temperature
Coefficient
V GS = 0 V, I D = 250 μ A
I D = 250 μ A,Referenced to 25 ° C
50
72
V
mV/ ° C
I DSS
Zero Gate Voltage Drain Current
V DS = 50 V,
V GS = 0 V
0.5
μ A
V DS = 50 V, V GS = 0 V T J = 125 ° C
5
μ A
V DS = 30 V,
V GS = 0 V
100
nA
I GSS
Gate–Body Leakage.
V GS = ± 20 V,
V DS = 0 V
± 100
nA
On Characteristics
(Note 2)
V GS(th)
Gate Threshold Voltage
V DS = V GS ,
I D = 1 mA
0.8
1.3
1. 5
V
? V GS(th)
? T J
Gate Threshold Voltage
Temperature Coefficient
I D = 1 mA,Referenced to 25 ° C
–2
mV/ ° C
R DS(on)
I D(on)
Static Drain–Source
On–Resistance
On–State Drain Current
V GS = 10 V, I D = 0.22 A
V GS = 4.5 V, I D = 0.22 A
V GS = 10 V, I D = 0.22 A, T J = 125 ° C
V GS = 10 V, V DS = 5 V
0.2
0.7
1.0
1.1
3.5
6.0
5.8
?
A
g FS
Forward Transconductance
V DS = 10V,
I D = 0.22 A
0.12
0.5
S
Dynamic Characteristics
C iss
C oss
C rss
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
V DS = 25 V,
f = 1.0 MHz
V GS = 0 V,
27
13
6
pF
pF
pF
R G
Gate Resistance
V GS = 15 mV, f = 1.0 MHz
9
?
Switching Characteristics
(Note 2)
t d(on)
t r
t d(off)
t f
Q g
Q gs
Turn–On Delay Time
Turn–On Rise Time
Turn–Off Delay Time
Turn–Off Fall Time
Total Gate Charge
Gate–Source Charge
V DD = 30 V,
V GS = 10 V,
V DS = 25 V,
V GS = 10 V
I D = 0.29 A,
R GEN = 6 ?
I D = 0.22 A,
2.5
9
20
7
1.7
0.1
5
18
36
14
2.4
ns
ns
ns
ns
nC
nC
Q gd
Gate–Drain Charge
0.4
nC
Drain–Source Diode Characteristics and Maximum Ratings
I S
Maximum Continuous Drain–Sourc e Diode Forward Current
0.22
A
V SD
Drain–Source Diode Forward
V GS = 0 V,
I S = 0.44 A (Note 2)
0.8
1.4
V
Voltage
Notes:
1.
R θ JA is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of
the drain pins. R θ JC is guaranteed by design while R θ CA is determined by the user's board design.
a) 350°C/W when mounted on a
minimum pad..
Scale 1 : 1 on letter size paper
2.
Pulse Test: Pulse Width ≤ 300 μ s, Duty Cycle ≤ 2.0%
BSS138 Rev C (W)
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