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参数资料
| 型号： | BD9141MUV-E2 |
| 厂商： | Rohm Semiconductor |
| 文件页数： | 3/21页 |
| 文件大小： | 0K |
| 描述： | IC REG BUCK SYNC ADJ 2A 20VQFN |
| 产品培训模块： | High Efficiency Current Mode Switching Regulators CMOS LDO Regulators |
| 特色产品： | BD91x Series Step-Down Regulators |
| 标准包装： | 1 |
| 类型： | 降压（降压） |
| 输出类型： | 可调式 |
| 输出数： | 1 |
| 输出电压： | 2.5 V ~ 6 V |
| 输入电压： | 4.5 V ~ 13.2 V |
| PWM 型： | 电流模式 |
| 频率 - 开关： | 500kHz |
| 电流 - 输出： | 2A |
| 同步整流器： | 是 |
| 工作温度： | -40°C ~ 105°C |
| 安装类型： | 表面贴装 |
| 封装/外壳： | 20-VFQFN 裸露焊盘 |
| 包装： | 标准包装 |
| 供应商设备封装： | VQFN020V4040 |
| 产品目录页面： | 1373 (CN2011-ZH PDF) |
| 其它名称： | BD9141MUV-E2DKR |
BD9141MUV
● Absolute Maximum Ratings
Datasheet
Parameter
Symbol
Limits
Unit
V CC Voltage
PV CC Voltage
V CC
PV CC
-0.3 to +15
-0.3 to +15
*1
*1
V
V
EN Voltage
SW Voltage
ITH,VREG,ADJ Voltage
V EN
V SW
V ITH ,V REG, V ADJ,
-0.3 to +15
-0.3 to +15
-0.3 to +7
V
V
V
Power Dissipation 1
Power Dissipation 2
Power Dissipation 3
Power Dissipation 4
Pd1
Pd2
Pd3
Pd4
0.34
0.70
2.21
3.56
*2
*3
*4
*5
W
W
W
W
Operating temperature range
Storage temperature range
Maximum junction temperature
Topr
Tstg
Tjmax
-40 to +105
-55 to +150
+150
℃
℃
℃
*1
*2
*3
*4
*5
Pd should not be exceeded.
IC only.
1 layer, mounted on a board 74.2mm × 74.2mm × 1.6mm Glass-epoxy PCB (Copper foil area : 10.29mm2)
4 layers, mounted on a board 74.2mm × 74.2mm × 1.6mm Glass-epoxy PCB
(1st ,4th Copper foil area : 10.29mm2 2nd ,3rd Copper foil area : 5505mm2) ,.
4 layers, mounted on a board 74.2mm × 74.2mm × 1.6mm Glass-epoxy PCB (Copper foil area : 5505mm2) , copper foil in each layers.
Min.
V CC
4.5
● R ecommended Operating Ratings
Parameter
V CC Voltage
(Ta=-40 to +105 ℃ )
Symbol
*6 *7
Limits
Typ.
8.0
Max.
13.2
Unit
V
PV CC Voltage
EN Voltage
P VCC
V EN
*6
4.5
0
*7
8.0
-
13.2
VCC
V
V
SW average output current
Isw
*6
-
-
2.0
A
Output voltage Setting Range
V OUT
*7
2.5
-
6.0
V
*6
*7
Pd should not be exceeded.
VccMin. = Vout + 1.3V.
● E lectrical Characteristics (Ta=25 ℃ , V CC =PV C C =8.0V, EN=V CC , R 1 =8.2k Ω , R 2 =43k Ω , unless otherwise specified.)
Parameter
Standby current
Bias current
EN Low voltage
EN High voltage
EN input current
Oscillation frequency
Pch FET ON resistance
Nch FET ON resistance
ADJ Voltage
ITH SI nk current
ITH S ource C urrent
UVLO threshold voltage
UVLO release voltage
Soft start time
Timer latch time
Output Short circuit
Threshold Voltage
Symbol
I STB
I CC
V ENL
V ENH
I EN
F OSC
R ONP
R ONN
V ADJ
I THSI
I THSO
V UVLO1
V UVLO2
T SS
T LATCH
V SCP
Min.
-
-
-
2.0
-
400
-
-
0.788
10
10
3.90
3.95
0.5
1
-
Limits
Typ.
0
300
GND
V CC
1.6
500
150
80
0.800
20
20
4.10
4.20
1
2
0.4
Max.
10
500
0.8
-
10
600
300
160
0.812
-
-
4.30
4.50
2
3
0.56
Unit
μA
μA
V
V
μA
KHz
mΩ
mΩ
V
μA
μA
V
V
ms
ms
V
Conditions
EN=GND
Standby mode
Active mode
V EN =8V
P VCC =8V
P VCC =8V
V ADJ =1.0V
V ADJ =0.6V
V CC =8V → 0V
V CC =0V → 8V
SCP/TSD operated
V ADJ =0.8V → 0V
www.rohm.com
?2012 ROHM Co., Ltd. All rights reserved.
TSZ22111 ? 15 ? 001
3/19
TSZ02201-0J3J0AJ00180-1-2
02.MAR.2012 Rev.001
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