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参数资料
| 型号： | 70V3319S133BCGI |
| 厂商： | INTEGRATED DEVICE TECHNOLOGY INC |
| 元件分类： | SRAM |
| 英文描述： | 256K X 18 DUAL-PORT SRAM, 4.2 ns, CBGA256 |
| 封装： | 17 X 17 MM X 1.4 MM, 1 MM PITCH, GREEN, BGA-256 |
| 文件页数： | 23/23页 |
| 文件大小： | 222K |
| 代理商： | 70V3319S133BCGI |
6.42
IDT70V3319/99S
High-Speed 3.3V 256/128K x 18 Dual-Port Synchronous Static RAM
Industrial and Commercial Temperature Ranges
9
DC Electrical Characteristics Over the Operating
Temperature and Supply Voltage Range(3) (VDD = 3.3V ± 150mV)
NOTES:
1. At f = fMAX, address and control lines (except Output Enable) are cycling at the maximum frequency clock cycle of 1/tCYC, using "AC TEST CONDITIONS" at input
levels of GND to 3V.
2. f = 0 means no address, clock, or control lines change. Applies only to input at CMOS level standby.
3. Port "A" may be either left or right port. Port "B" is the opposite from port "A".
4. VDD = 3.3V, TA = 25°C for Typ, and are not production tested. IDD DC(f=0) = 120mA (Typ).
5.
CEX = VIL means CE0X = VIL and CE1X = VIH
CEX = VIH means CE0X = VIH or CE1X = VIL
CEX < 0.2V means CE0X < 0.2V and CE1X > VDDQ - 0.2V
CEX > VDDQ - 0.2V means CE0X > VDDQ - 0.2V or CE1X - 0.2V
"X" represents "L" for left port or "R" for right port.
70V3319/99S166
Com'l Only
70V3319/99S133
Com'l
& Ind
Symbol
Parameter
Test Condition
Version
Typ.
(4)
Max.
Typ.
(4)
Max.
Unit
IDD
Dynamic Operating
Current (Both
Ports Active)
CEL and CER= VIL,
Outputs Disabled,
f = fMAX(1)
COM'L
S
370
500
320
400
mA
IND
S
____
320
480
ISB1
Standby Current
(Both Ports - TTL
Level Inputs)
CEL = CER = VIH,
Outputs Disabled,
f = fMAX
(1)
COM'L
S
125
200
115
160
mA
IND
S
____
115
195
ISB2
Standby Current
(One Port - TTL
Level Inputs)
CE"A" = VIL and CE"B" = VIH(5)
Active Port Outputs Disabled,
f=fMAX
(1)
COM'L
S
250
350
220
290
mA
IND
S
____
220
350
ISB3
Full Standby Current
(Both Ports - CMOS
Level Inputs)
Both Ports Outputs Disabled
CEL and CER > VDDQ - 0.2V,
VIN > VDDQ - 0.2V
or VIN < 0.2V, f = 0(2)
COM'L
S
15
30
15
30
mA
IND
S
____
15
40
ISB4
Full Standby Current
(One Port - CMOS
Level Inputs)
CE"A" < 0.2V and CE"B" > VDDQ - 0.2V(5)
VIN > VDDQ - 0.2V or VIN < 0.2V
Active Port, Outputs Disabled, f = fMAX
(1)
COM'L
S
250
350
220
290
mA
IND
S
____
220
350
5623 tbl 09
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| 70V3319S133BCI | 功能描述:静态随机存取存储器 256Kx18 STD-PWR 3.3V SYNC DUAL-PORT RAM RoHS:否 制造商:Cypress Semiconductor 存储容量:16 Mbit 组织:1 M x 16 访问时间:55 ns 电源电压-最大:3.6 V 电源电压-最小:2.2 V 最大工作电流:22 uA 最大工作温度:+ 85 C 最小工作温度:- 40 C 安装风格:SMD/SMT 封装 / 箱体:TSOP-48 封装:Tray |
| 70V3319S133BCI8 | 制造商:Integrated Device Technology Inc 功能描述:SRAM Chip Sync Dual 3.3V 4.5M-Bit 256K x 18 15ns/4.2ns 256-Pin CABGA T/R 制造商:Integrated Device Technology Inc 功能描述:SRAM SYNC DUAL 3.3V 4MBIT 256KX18 15NS/4.2NS 256BGA - Tape and Reel 制造商:Integrated Device Technology Inc 功能描述:256Kx18 STD-PWR 3.3V SYNC DUAL-PORT RAM |
| 70V3319S133BF | 功能描述:静态随机存取存储器 256Kx18 STD-PWR 3.3V SYNC DUAL-PORT RAM RoHS:否 制造商:Cypress Semiconductor 存储容量:16 Mbit 组织:1 M x 16 访问时间:55 ns 电源电压-最大:3.6 V 电源电压-最小:2.2 V 最大工作电流:22 uA 最大工作温度:+ 85 C 最小工作温度:- 40 C 安装风格:SMD/SMT 封装 / 箱体:TSOP-48 封装:Tray |
| 70V3319S133BF8 | 制造商:Integrated Device Technology Inc 功能描述:SRAM Chip Sync Dual 3.3V 4.5M-Bit 256K x 18 15ns/4.2ns 208-Pin CABGA T/R 制造商:Integrated Device Technology Inc 功能描述:SRAM SYNC DUAL 3.3V 4MBIT 256KX18 15NS/4.2NS 208CABGA - Tape and Reel 制造商:Integrated Device Technology Inc 功能描述:256Kx18 STD-PWR 3.3V SYNC DUAL-PORT RAM |
| 70V3319S133BFI | 制造商:Integrated Device Technology Inc 功能描述:SRAM Chip Sync Dual 3.3V 4.5M-Bit 256K x 18 15ns/4.2ns 208-Pin CABGA 制造商:Integrated Device Technology Inc 功能描述:SRAM Chip Sync Dual 3.3V 4.5M-Bit 256K x 18 15ns/4.2ns 208-Pin CABGA Tray 制造商:Integrated Device Technology Inc 功能描述:SRAM SYNC DUAL 3.3V 4MBIT 256KX18 15NS/4.2NS 208CABGA - Rail/Tube 制造商:Integrated Device Technology Inc 功能描述:256Kx18 STD-PWR 3.3V SYNC DUAL-PORT RAM |
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