参数资料
型号: 70V3319S133BCGI
厂商: INTEGRATED DEVICE TECHNOLOGY INC
元件分类: SRAM
英文描述: 256K X 18 DUAL-PORT SRAM, 4.2 ns, CBGA256
封装: 17 X 17 MM X 1.4 MM, 1 MM PITCH, GREEN, BGA-256
文件页数: 2/23页
文件大小: 222K
代理商: 70V3319S133BCGI
6.42
IDT70V3319/99S
High-Speed 3.3V 256/128K x 18 Dual-Port Synchronous Static RAM
Industrial and Commercial Temperature Ranges
10
AC Test Conditions (VDDQ - 3.3V/2.5V)
Figure 1. AC Output Test load.
Figure 2. Output Test Load
(For tCKLZ, tCKHZ, tOLZ, and tOHZ).
*Including scope and jig.
Figure 3. Typical Output Derating (Lumped Capacitive Load).
Input Pulse Levels (Address & Controls)
Input Pulse Levels (I/Os)
Input Rise/Fall Times
Input Timing Reference Levels
Output Reference Levels
Output Load
GND to 3.0V/GND to 2.4V
GND to 3.0V/GND to 2.4V
2ns
1.5V/1.25V
Figures 1 and 2
5623 tbl 10
1.5V/1.25
50
50
5623 drw 03
10pF
(Tester)
DATAOUT
,
5623 drw 04
590
5pF*
435
3.3V
DATAOUT
,
833
5pF*
770
2.5V
DATAOUT
,
-1
1
2
3
4
5
6
7
20.5
30
50
80
100
200
10.5pF is the I/O capacitance of this
device, and 10pF is the AC Test Load
Capacitance.
Capacitance (pF)
tCD
(Typical, ns)
5623 drw 05
,
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