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参数资料
| 型号： | 70V3319S133BCGI |
| 厂商： | INTEGRATED DEVICE TECHNOLOGY INC |
| 元件分类： | SRAM |
| 英文描述： | 256K X 18 DUAL-PORT SRAM, 4.2 ns, CBGA256 |
| 封装： | 17 X 17 MM X 1.4 MM, 1 MM PITCH, GREEN, BGA-256 |
| 文件页数： | 11/23页 |
| 文件大小： | 222K |
| 代理商： | 70V3319S133BCGI |
6.42
IDT70V3319/99S
High-Speed 3.3V 256/128K x 18 Dual-Port Synchronous Static RAM
Industrial and Commercial Temperature Ranges
19
Functional Description
The IDT70V3319/99 provides a true synchronous Dual-Port Static
RAM interface. Registered inputs provide minimal set-up and hold times
on address, data, and all critical control inputs. All internal registers are
clocked on the rising edge of the clock signal, however, the self-timed
internalwritepulseisindependentoftheLOWtoHIGHtransitionoftheclock
signal.
An asynchronous output enable is provided to ease asyn-
chronousbusinterfacing.Counterenableinputsarealsoprovidedtostall
the operation of the address counters for fast interleaved
memoryapplications.
A HIGH on
CE0oraLOWonCE1foroneclockcyclewillpowerdown
the internal circuitry to reduce static power consumption. Multiple chip
enables allow easier banking of multiple IDT70V3319/99s for depth
expansion configurations. Two cycles are required with
CE0 LOW and
CE1 HIGHto re-activate the outputs.
5623 drw 20
IDT70V3319/99
CE0
CE1
CE0
CE1
A18/A17(1)
CE1
CE0
VDD
IDT70V3319/99
Control Inputs
UB, LB,
R/
W,
OE,
CLK,
ADS,
REPEAT,
CNTEN
,
Depth and Width Expansion
The IDT70V3319/99 features dual chip enables (refer to Truth
Table I) in order to facilitate rapid and simple depth expansion with no
requirements for external logic. Figure 4 illustrates how to control the
various chip enables in order to expand two devices in depth.
The IDT70V3319/99 can also be used in applications requiring
expanded width, as indicated in Figure 4. Through combining the control
signals, the devices can be grouped as necessary to accommodate
applications needing 36-bits or wider.
Figure 4. Depth and Width Expansion with IDT70V3319/99
NOTE:
1. A17 is for IDT70V3319, A16 is for IDT70V3399.
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相关代理商/技术参数 |
参数描述 |
|---|---|
| 70V3319S133BCI | 功能描述:静态随机存取存储器 256Kx18 STD-PWR 3.3V SYNC DUAL-PORT RAM RoHS:否 制造商:Cypress Semiconductor 存储容量:16 Mbit 组织:1 M x 16 访问时间:55 ns 电源电压-最大:3.6 V 电源电压-最小:2.2 V 最大工作电流:22 uA 最大工作温度:+ 85 C 最小工作温度:- 40 C 安装风格:SMD/SMT 封装 / 箱体:TSOP-48 封装:Tray |
| 70V3319S133BCI8 | 制造商:Integrated Device Technology Inc 功能描述:SRAM Chip Sync Dual 3.3V 4.5M-Bit 256K x 18 15ns/4.2ns 256-Pin CABGA T/R 制造商:Integrated Device Technology Inc 功能描述:SRAM SYNC DUAL 3.3V 4MBIT 256KX18 15NS/4.2NS 256BGA - Tape and Reel 制造商:Integrated Device Technology Inc 功能描述:256Kx18 STD-PWR 3.3V SYNC DUAL-PORT RAM |
| 70V3319S133BF | 功能描述:静态随机存取存储器 256Kx18 STD-PWR 3.3V SYNC DUAL-PORT RAM RoHS:否 制造商:Cypress Semiconductor 存储容量:16 Mbit 组织:1 M x 16 访问时间:55 ns 电源电压-最大:3.6 V 电源电压-最小:2.2 V 最大工作电流:22 uA 最大工作温度:+ 85 C 最小工作温度:- 40 C 安装风格:SMD/SMT 封装 / 箱体:TSOP-48 封装:Tray |
| 70V3319S133BF8 | 制造商:Integrated Device Technology Inc 功能描述:SRAM Chip Sync Dual 3.3V 4.5M-Bit 256K x 18 15ns/4.2ns 208-Pin CABGA T/R 制造商:Integrated Device Technology Inc 功能描述:SRAM SYNC DUAL 3.3V 4MBIT 256KX18 15NS/4.2NS 208CABGA - Tape and Reel 制造商:Integrated Device Technology Inc 功能描述:256Kx18 STD-PWR 3.3V SYNC DUAL-PORT RAM |
| 70V3319S133BFI | 制造商:Integrated Device Technology Inc 功能描述:SRAM Chip Sync Dual 3.3V 4.5M-Bit 256K x 18 15ns/4.2ns 208-Pin CABGA 制造商:Integrated Device Technology Inc 功能描述:SRAM Chip Sync Dual 3.3V 4.5M-Bit 256K x 18 15ns/4.2ns 208-Pin CABGA Tray 制造商:Integrated Device Technology Inc 功能描述:SRAM SYNC DUAL 3.3V 4MBIT 256KX18 15NS/4.2NS 208CABGA - Rail/Tube 制造商:Integrated Device Technology Inc 功能描述:256Kx18 STD-PWR 3.3V SYNC DUAL-PORT RAM |
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